• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1361-1363
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• 1997

Zinc oxide-based MOV was fabricated with $SiO_2$ additive ranging from 0.5 to 4.0 mol%, and the microstructure and electrical characteristics were investigated. $Zn_2SiO_4$ phase formed by $SiO_2$ additive was distributed at ZnO grains, grain boundaries, and multiple grain junctions. As the content of $SiO_2$ additive increases, average grain size decreased from 40.6 to $26.9{\mu}m$ due to the Pinning effect by $Zn_2SiO_4$ at grain boundaries Breakdown voltage and nonlinear exponent increased, and leakage current decreased in the range of $11.2{\sim}6.14{\mu}A$ with an increasing $SiO_2$. Donor concentration and interface state density decreased, and barrier height increased in the range of $0.71{\sim}1.04eV$ with an increasing $SiO_2$. While, as the content of $SiO_2$ additive, apparent dielectric constant decreased, peak frequency of dissipation factor decreased in the range of $6.45{\times}10^5{\sim}3.00{\times}10^5Hz$, and dissipation peak was $0.31{\sim}0.22$ at Peak frequency.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• v.9 no.1
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• pp.1022-1025
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• 2005

The effect of substrate surface to the formation of ZnO nanostructures has been investigated using Si (111), $Al_2O_3$(C-plane) $Al_2O_3$(A-plane), and $Al_2O_3$(R-plane) substrates. The growth temperature was controlled from 500$^{\circ}C$ ${\sim}$ 600$^{\circ}C$, and the luminescence properties were investigated by a series of photoluminescence (PL) measurements at the elevating temperatures. ZnO nanostructures grown on Si substrate show strong UV emission intensity along with green emission positioned at 3.22 eV and 2.5 eV, respectively. However, green emission was not observed from the ZnO nanostructures grown on $Al_2O_3$ substrates. It is explained in terms of the difference of the surface energy between Si and $Al_2O_3$. Also, the origin of UV emissions has been discussed by using the temperature-dependent PL. The distinction of the PL spectra is interpreted in terms of the difference of the impurity included in the nanostructures.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 1994.04c
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• pp.10-11
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• 1994

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.114-114
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• 2010

In this study, structural properties and photoluminescent characteristics of thin film rhombohedral zinc orthosilicate doped with manganese ($Zn_2SiO_4:Mn$) were investigated. The $Zn_2SiO_4:Mn$ films showed a pronounced absorption edge in the near ultraviolet wavelength region and a high optical transparency in the visible spectral range. The maximum transmittance reached 0.922 at 597 nm, which was very close to the transmittance of the fused quartz substrate alone (0.935). The $Zn_2SiO_4:Mn$ films were composed of rhombohedral polycrystalline grains with random crystallographic orientation. The broad-band photoluminescence emission peaked at around 525 nm was observed from the $Zn_2SiO_4:Mn$ films, which was ascribed to the radiative relaxation from the $^4T_1$ lowest excitation state to $^6A_1$ ground state of 3d5 electrons in divalent manganese ion. The excitation band exhibited a peak maximum at 259 nm in the near ultraviolet region, which was considered to be associated with the charge transfer transition of divalent Mn ion in the $Zn_2SiO_4$ system.

• Bulletin of the Korean Chemical Society
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• v.33 no.10
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• pp.3213-3217
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• 2012

Reactive adsorption desulfurization (RADS) experiments were conducted over a series of commercial metal oxide supports ($Al_2O_{3-}$, $SiO_{2-}$, $TiO_{2-}$ and $ZrO_{2-}$) supported Ni/ZnO adsorbents. The adsorbents were characterized by X-ray diffraction (XRD), temperature programmed reduction (TPR), and Fourier transform infrared spectroscopy (FTIR) in order to find out the influence of specific types of surface chemistry and structural characteristics on the sulfur adsorptive capacity. The desulfurization performance of all the studied adsorbents decreased in the following order: Ni/ZnO-$TiO_2$ > Ni/ZnO-$ZrO_2$ > Ni/ZnO-$SiO_2$ > Ni/ZnO-$Al_2O_3$. Ni/ZnO-$TiO_2$ shows the best performance and the three hour sulfur capacity can achieve 12.34 mg S/g adsorbent with a WHSV of $4h^{-1}$. Various characterization techniques suggest that weak interaction between active component and support component, high dispersion of NiO and ZnO, high reducibility and large total Lewis acidity of the adsorbents are important factors in achieving better RADS performance.

• Bulletin of the Korean Chemical Society
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• v.33 no.2
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• pp.398-402
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• 2012

ZnSe/$SiO_2$ coaxial nanowires were synthesized by a two-step process: thermal evaporation of ZnSe powders and sputter-deposition of $SiO_2$. Two different types of nanowires are observed: thin rod-like ones with a few to a few tens of nanometers in diameter and up to a few hundred of micrometers in length and wide belt-like ones with a few micrometers in width. Room-temperature photoluminescence (PL) measurement showed that ZnSe/$SiO_2$ coaxial nanowires had an orange emission band centered at approximately 610 nm. The intensity of the orange emission from the $SiO_2$-sheathed ZnSe nanowires was enhanced significantly by annealing in a reducing atmosphere whereas it was degraded by annealing in an oxidizing atmosphere. The origins of the PL changes by annealing are discussed based on the energy-dispersive X-ray spectroscopy analysis results.

• Journal of the Semiconductor & Display Technology
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• v.13 no.3
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• pp.35-38
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• 2014

Flat panel displays fabricated on glass substrate use amorphous Si for data processing circuit. Recent progress in display technology requires a new material to replace the amorphous Si, and ZnO is a good candidate. ZnO is a wide bandgap (3.3 eV) semiconductor with high mobility and good optical transparency. ZnO is usually grown by sputtering using ZnO ceramic target. However, ceramic target is more expensive than metal target, and making large area target is very difficult. In this work we studied characteristics of ZnO thin-film transistor grown by rf sputtering using Zn metal target and $CO_2$. ZnO film was grown at $450^{\circ}C$ substrate temperature, with -70 V substrate bias voltage applied. By using these methods, our ZnO TFT showed $5.2cm^2/Vsec$ mobility, $3{\times}10^6$ on-off ratio, and -7 V threshold voltage.

• Korean Journal of Materials Research
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• v.22 no.4
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• pp.180-184
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• 2012

Nanostructures of ZnO, such as nanowires, nanorods, nanorings, and nanobelts have been actively studied and applied in electronic or optical devices owing to the increased surface to volume ratio and quantum confinement that they provide. ZnO seed layer (about 40 nm thick) was deposited on Si(100) substrate by RF magnetron sputtering with power of 60 W for 5 min. ZnO nanorods were grown on ZnO seed layer/Si(100) substrate at $95^{\circ}C$ for 5 hr by hydrothermal method with concentrations of $Zn(NO_3)_2{\cdot}6H_2O$ [ZNH] and $(CH_2)_6N_4$ [HMT] precursors ranging from 0.02M to 0.1M. We observed the microstructure, crystal structure, and photoluminescence of the nanorods. The ZnO nanorods grew with hexahedron shape to the c-axis at (002), and increased their diameter and length with the increase of precursor concentration. In 0.06 M and 0.08 M precursors, the mean aspect ratio values of ZnO nanorods were 6.8 and 6.5; also, ZnO nanorods had good crystal quality. Near band edge emission (NBE) and a deep level emission (DLE) were observed in all ZnO nanorod samples. The highest peak of NBE and the lower DLE appeared in 0.06 M precursor; however, the highest peak of DLE and the lower peak of NBE appeared in the 0.02 M precursor. It is possible to explain these phenomena as results of the better crystal quality and homogeneous shape of the nanorods in the precursor solution of 0.06 M, and as resulting from the bed crystal quality and the formation of Zn vacancies in the nanorods due to the lack of $Zn^{++}$ in the 0.02 M precursor.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.5
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• pp.347-350
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• 2013

By inserting a very thin metal layer of Ag between two outer oxide layers of amorphous silicon indium zinc oxide (SIZO), we fabricated a highly transparent SIZO/Ag/SIZO multilayer on a glass substrate. In order to find the optimized thickness of Ag layers, we investigated the variation of optical properties depending on Ag thickness. It was found that the transition of Ag layer from island formation to a continuous film occurred at a critical thickness. Continuity of the Ag film is very important for optical properties in SIZO/Ag/SIZO multilayer. With about 15 nm thick Ag layer, the multilayer showed a high optical transmittance of 80% at 550 nm and low emissivity in IR.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.6
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• pp.480-485
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• 2011

ZnO is an n-type semiconductor with a wide band gap near 3.37 eV. It was known that ZnO films with a resistivity of the order of $10^{-4}\;{\Omega}cm$ is not easy to obtain. 1, 3, and 5wt% Si element were added into ZnO in ordre to improve the electrical and optical characteristics. The Si-doped ZnO (SZO) was grown on a glass substrate by radio frequency (RF) magnetron sputtering at the temperature range from 100 to $500^{\circ}C$. X-ray diffraction (XRD) patterns of SZO film showed preferable crystal orientation of (002) plane. It was confirmed that the lowest resistivity of the SZO films was $2.44{\times}10^{-3}{\Omega}cm$ and SZO films were significantly influenced by the working temperature. The average transmittance of the films was over 80% in the visible ranges.