• Title/Summary/Keyword: SiC-C films

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Optical Properties of Silicon Oxide (SiOx, x<2) Thin Films Deposited by PECVD Technique (PECVD 방법으로 증착한 SiOx(x<2) 박막의 광학적 특성 규명)

  • Kim, Youngill;Park, Byoung Youl;Kim, Eunkyeom;Han, Munsup;Sok, Junghyun;Park, Kyoungwan
    • Korean Journal of Metals and Materials
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    • v.49 no.9
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    • pp.732-738
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    • 2011
  • Silicon oxide thin films were deposited by using a plasma-enhanced chemical-vapor deposition technique to investigate the light emission properties. The photoluminescence characteristics were divided into two categories along the relative ratio of the flow rates of $SiH_4$ and $N_2O$ source gases, which show light emission in the broad/visible range and a light emission peak at 380 nm. We attribute the broad/visible light emission and the light emission peak to the quantum confinement effect of nanocrystalline silicon and the Si=O defects, respectively. Changes in the photoluminescence spectra were observed after the post-annealing processes. The photoluminescence spectra of the broad light emission in the visible range shifted to the long wavelength and were saturated above an annealing temperature of $900^{\circ}C$ or after 1 hour annealing at $970^{\circ}C$. However, the position of the light emission peak at 380 nm did not change at all after the post-annealing processes. The light emission intensities at 380 nm initially increased, and decreased at annealing temperatures above $700^{\circ}C$ or after 1 hour annealing at $700^{\circ}C$. The photoluminescence behaviors after the annealing processes can be explained bythe size change of the nanocrystalline silicon and the density change of Si=O defect in the films, respectively. These results support the possibility of using a silicon-based light source for Si-optoelectronic integrated circuits and/or display devices.

A Study on the Chemically Vapor Deposited TiC, TiN, and TiC(C, N) on $Si_3N_4$-TiC Ceramic Tools. ($Si_3N_4-TiC$ Ceramic 공구에 화학증착된 TiC, TiN 및 Ti(C, N)에 관한 연구)

  • 김동원;김시범;이준근;천성순
    • Tribology and Lubricants
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    • v.4 no.2
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    • pp.36-43
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    • 1988
  • Titanium carbide(TiC) and titanium nitride(TiN) flims were deposited on $Si_3N_4$-TiC composite cutting tools by chemical vapor deposition(CVD) using $TiCl_4-CH_4-H_2$ and $TiCl_4-H_2-N_2$ gas mixtures, respectively. The nonmetal to metal ratio of deposit increases with increasing $m_{C/Ti}$(mole ratio of CH$_4$ to TiCl$_4$ in the input) for TiC coatings and $m_{N/Ti}$(mole ratio of N$_2$ to TiCl$_4$ in the input) for TiN coatings. The nearly stoiahiometric films could be obtained under the deposition condition of $m_{C/Ti}$ between 1.15 and 1.61 for TiC, and that of $m_{N/Ti}$ between 25 and 28 for TiN. Also maximum microhardness of the coatings can be obtained in these ranges. The interfacial region of TiC coatings on $Si_3N_4$-TiC ceramics is wider than that of TiN coatings according to Auger depth profile analysis, which indicates good interfacial bonding for TiC. Experimental results show that TiC coatings have an randomly equiaxed structure and Columnar structure with(220) preferred orientation can be obtained for TiN coatings. And, multilayer coatings have a dense and equiaxed structure.

Formation of SiOF Thin Films by FTES/$O_2$-PECVD Method (FTES/$O_2$-PECVD 방법에 의한 SiOF 박막형성)

  • Kim, Duk-Soo;Lee, Ji-Hyeok;Lee, Kwang-Man;Gang, Dong-Sik;Choe, Chi-Kyu
    • Korean Journal of Materials Research
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    • v.9 no.8
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    • pp.825-830
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    • 1999
  • Characteristics of SiOF films deposited by a FTES/$O_2$-plasma enhanced chemical vapor deposition method have been investigated using Fourier transform infrared spectroscopy, X-ray photoelectro spectroscopy, and ellipsometry. Electrical properties such as dielectric constant, dielectric breakdown and leakage current density are investigated using C-V and I-V measurements with MIS(Au/SiOF/p-Si) capacitor structure. Stepcoverage of the films have been also characterized using scanning electron microscopy and ellipsometry. A high quality SiOF film was formed on that the flow rates of FTES and $O_2$were 300sccm, respectively. The dielectric constant of the deposited SiOF film was about 3.1. This value is lower than that of the oxide films obtained using other method. The dielectric breakdown field and leakage current are more than 10MV/cm and about $8[\times}10^{9}A/\textrm{cm}^2$, respectively. The deposited SiOF film with thickness as $2500{\AA}$ on the $0.3{\mu}{\textrm}{m}$ metal pattern shows a high step-coverage without a void.

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A Study on Wetting Behaviors of Al-Coated $SiC_f$ Composite (Al-$SiC_f$ 복합재료에서 보강재의 coating처리가 젖음성에 미치는 영향)

  • Kim, Kyun-Young;Lee, Kyung-Ku;Choi, Dap-Chun;Lee, Doh-Jae
    • Journal of Korea Foundry Society
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    • v.14 no.3
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    • pp.274-284
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    • 1994
  • SiC fibers were coated with Cu, Ag and Ni metallic thin films by magnetron sputtering in order to improve wetting properties between Al matrix and SiC fiber. The wetting behavior of metal coated SiC fiber by pure Al has been studied at $670^{\circ}C{\sim}900^{\circ}C$ range for $10{\sim}90min$. under vacuum atmosphere. Besides, the effect of coated film thickness on the wettability has been investigated. The wetting behavior and interfacial reaction between Al and SiC fibers were analysed with optical microscope and SEM (scanning electron microscope). The wetting behavior of the as-received SiC fiber with Al melt was not uniform, indicated by the contact angles from less than $90^{\circ} to more Al melt was appeared in the initial stage of reation. It was considered that the metallic thin film played an important role in reducing the interfacial free energy and breaking down the aluminum oxide film by eutectic reaction with Al melt. However the wettability of Ni coated SiC fiber was not improved as much as that of Cu or Ag coated SiC fiber. The improvement of wettability by coating thickness is clearly showed in $1{\mu}m$ coated SiC fiber compared with $0.25{\mu}m$ coated SiC.

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Dependence of Ferroelectric Properties on the Crystalline Phases of HoMnO3 Thin Film (HoMnO3 박막의 강유전 특성의 결정상 의존성)

  • Kim, Eung-Soo;Kang, Dong-Ho
    • Korean Journal of Materials Research
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    • v.16 no.6
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    • pp.394-399
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    • 2006
  • Ferroelectric $HoMnO_3$ thin films were deposited on the Si(100) substrate at $700^{\circ}C$ for 2 hrs by metalorganic chemical vapor deposition (MOCVD) and post-annealed at 850oC by rapid thermal process (RTP). Electrical properties and crystalline phases of $HoMnO_3$ thin films were investigated as a function of postannealing time. Single phase of hexagonal symmetry with c-axis preferred orientation was obtained from $HoMnO_3$ thin films post-annealed at $850^{\circ}C$ for 5 min, while the c-axis preferred orientation was decreased with the increase of post-annealing time, and the thin films post-annealed at $850^{\circ}C$ for 15 min showed the mixture phases of hexagonal and orthorhombic symmetry. P-E (Polarization-Electric field) hysteresis loop of ferroelectric $HoMnO_3$ thin films was observed only for the single phase of hexagonal symmetry, but that was not observed for the mixture phases of the hexagonal and orthorhombic symmetry, which was discussed with the bond valence of Mn ion of crystalline phase. Leakage current density was dependent on the microstructure of thin films as well as the change of valence of Mn ion.

A study on crystallization of a-Si:H films (수소화된 비정질 규소박막의 결정화에 관한 연구)

  • 김도영;임동건;김홍우;심경석;이수홍;이준신
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.8 no.2
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    • pp.269-277
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    • 1998
  • The crystallization method determines the material quality and consequent device performance. This paper investigates the crystallization of a-Si:H films on various substrate materials and analyzes the crystallization effect with and without using eutectic forming metals. From the examinations of the various substrate materials, a metal Mo was selected for the a-Si:H films growth and subsequent crystallization of it. For a sample without any eutectic metal layer, we observed grain size of $0.8{\mu}m$ after $1100^{\circ}C$ anneal treatment. To reduce crystallization temperature, we used some of the eutectic forming metals such as Au, Al and Ag. Poly-Si films with grain size over $10{\mu}m$ and (111) preferential plains were achieved using a premetal layer of Au at an anneal temperature of $700^{\circ}C$. The various crystallization effects of eutectic metal thickness and type were investigated for photovoltaic (PV) device applications.

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Preparation of Low-Temperature Fired PZT Thick Films on Si by Screen Printing

  • Cheon, Chae-Il;Lee, Bong-Yeon;Kim, Jeong-Seog;Bang, Kyu-Seok;Kim, Jun-Chul;Lee, Hyeung-Gyu
    • Transactions on Electrical and Electronic Materials
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    • v.4 no.2
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    • pp.20-23
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    • 2003
  • Piezoelectric powder with the composition of PbTiO$_3$-PbZrO$_3$-Pb(Mn$\_$1/3/Nb$\_$2/3/)O$_3$ and small particle size of 0.3 $\mu\textrm{m}$ was investigated for low-temperature firing of PZT thick films. PbTiO$_3$-PbZrO$_3$-Pb(Mn$\_$1/3/Nb$\_$2/3)O$_3$ ceramics showed dense microstructure and superior piezoelectric properties, electromechanical coupling factor (k$\_$p/) of 0.501 and piezoelectric constant (d$\_$33/) of 224. The PZT paste was made of the powder and organic vehicles, and screen-printed on Pt(450nm)/YSZ(110nm)/SiO$_2$(300nm)/Si substrates and fired at 800∼900$^{\circ}C$. Any interface reaction between the PZT thick film and the bottom electrode was not observed in the PZT thick films. The PZT thick film fired at 800$^{\circ}C$ showed moderate electrical properties, the remanent polarization(p$\_$r/) of 16.0 ${\mu}$C/$\textrm{cm}^2$, the coercive field(E$\_$c/) of 36.7 ㎸/cm, and dielectric constant ($\varepsilon$$\_$r/) of 531. Low-temperature sinterable piezoelectric composition and high activity of fine particles reduced the sintering temperature of the thick film. This PZT thick film could be utilized for piezoelectric microactuators or microsensors that require Si micromachining technology.

Chemical vapor deposition of copper thin films for ultra large scale integration (초고집적회로를 위한 구리박막의 화학적 형성기술)

  • 박동일;조남인
    • Journal of the Korean Vacuum Society
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    • v.6 no.1
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    • pp.20-27
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    • 1997
  • We have investigated the formation techniques of copper thin films which would be useful for sub-quarter-micron integrated circuits. A chemical vapor deposition technology has been tried for the better side wall formation of the thin films, and a metal organic compound, named (hface)Cu(VTMS) (hexafluoroacetylacetonate vinyltrimethylsilane copper(I)) was used as the precursors. We have deposited the copper thin films on TiN and $SiO_2$substrates. The film resistivity and deposition selectivity have been measured as functions of substrate temperature and chamber pressure. Best electrical properties were obtained at $180^{\circ}C$ of substrate temperature and 0.6 Torr of chamber pressure. Under the optimum deposition conditions, polycrystalline copper structures were observed to be grown, and the deposition rate of 120 nm/min was measured. The electrical resistivity as low as 0.25$mu \Omega$.cm, and the surface roughness of 15.5 nm were also measured. These are the suitable electrical and material properties required in the sub-quarter-micron device fabrication. Also, in the substrate temperature range of 140-$250^{\circ}C$, high deposition selectivity was observed between TiN and $SiO_2$.

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Characteristics of TiN Barrier Metal Prepared by High Density Plasma CVD Method (고밀도 플라즈마 CVD 방법에 의한 TiN barrier metal 형성과 특성)

  • Choe, Chi-Gyu;Gang, Min-Seong;O, Gyeong-Suk;Lee, Yu-Seong;O, Dae-Hyeon;Hwang, Chan-Yong;Son, Jong-Won;Lee, Jeong-Yong;Kim, Geon-Ho
    • Korean Journal of Materials Research
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    • v.9 no.11
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    • pp.1129-1136
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    • 1999
  • TIN films were prepared on Si(100) substrate by ICP-CVD(inductive1y coupled plasma enhanced chemical vapor deposition) using TEMAT(tetrakis ethylmethamido titanium : Ti$[\textrm{N}\textrm{(CH)}_{3}\textrm{C}_{2}\textrm{H}_{5}]_{4}$) precursor at various deposition conditions. Phase, microstructure, and the electrical properties of TIN films were characterized by x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), high resolution transmission electron microscopy (HRTEM) and electrical measurements. Polycrystalline TiN films with B1 structure were grown at temperatures over $200^{\circ}C$. Preferentially oriented along TiN(111) films were obtained at temperatures over $300^{\circ}C$ with the flow rates of 10, 5, and 5 sccm for TEMAT, $\textrm{N}_{2}$ and Ar gas. The TiN/Si(100) interface was flat and no chemical reaction between TIN and $\textrm{SiO}_2$ was found. The resistivity, carrier concentration and the carrier mobility for the TiN sample prepared at $500^{\circ}C$ are 21 $\mu\Omega$cm, 9.5$\times\textrm{10}^{18}\textrm{cm}^{-3}$ and $462.6\textrm{cm}^{2}$/Vs, respectively.

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Epitaxial Growth of GaAs/GaAs and GaAs/Si by LCVD (레이저 CVD를 이용한 GaAs/GaAs 및 GaAs/Si 결정성장연구)

  • Choi, W.L.;Ku, J.K.;Chung, J.W.;Kwon, O.
    • Proceedings of the KIEE Conference
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    • 1989.11a
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    • pp.79-82
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    • 1989
  • We studied the epitaxial growth of GaAs/GaAs and GaAs/Si by Laser CVD with 193nm ArF pulsed excimer laser. The source gases of TMGa and AsC13 or TMGa-TMAs adducts are mixed with H2, and photolyzed above the substrate which is heated up to around 300$^{\circ}C$. Then the photolyzed atoms are deposited on the silicon or GaAs substrate. The deposited films are analyzed with ESKA depth profiling and X-ray differaction method, which shows that the films on Si and GaAs are stoichiometric and crystalized at such a low temperature. We show a clear evidence for the epitaxial growth of GaAs on Si or GaAs on GaAs at low temperature by excimer laser CVD.

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