• 한국산학기술학회논문지
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• 제14권12호
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• pp.6106-6113
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• 2013

가솔린 엔진 차량용 삼원촉매담체는 주로 코제라이트 세라믹으로 제작되는 다공성 부품으로 엔진의 혼합기가 농후한 경우 삼원촉매의 열적 내구성이 급격히 떨어져 설계 내구 수명을 제대로 만족시키지 못하고 있다. 따라서 본 연구에서는 SiC 세라믹 촉매 담체의 내구성 평가에 사용할 기계적 물성치를 유한요소해석으로 구하기 위하여 등가물성평가방법을 이용하여 SiC 세라믹 하니컴 담체의 기계적 물성치를 유한요소해석용 시험편으로 구하였다. MOR과 탄성계수는 코제라이트 세라믹 하니컴 담체에 비하여 SiC 세라믹 하니컴 담체가 최소 2배와 9.3배 정도 크게 평가되고 있어 SiC 세라믹 하니컴 담체는 코제라이트 세라믹 하니컴 담체에 비하여 높은 구조 강도를 가지고 있다.

• 한국세라믹학회지
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• 제34권12호
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• pp.1199-1204
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• 1997

SiC conversion layer was fabricated by the chemical vapor reaction between graphite substrate and silica powder. The CVR process was carried out in nitrogen atmosphere at 175$0^{\circ}C$ and 185$0^{\circ}C$. From the reduction of silica powder with graphite substrate, the SiO vapor was created, infiltrated into the graphite substrate, then, the SiC conversion layer was formed from the vapor-solid reaction of SiO and graphite. In the XRD pattern of conversion layer, it was confirmed that 3C $\beta$-SiC phase was created at 175$0^{\circ}C$ and 185$0^{\circ}C$. Also, in the back scattered image of cross-sectional conversion layer, it was found that the conversion layer was easily formed at 185$0^{\circ}C$, the interface of graphite substrate and SiC layer was observed. It was though that the coke particle size and density of graphite substrate mainly affect the XRD pattern and microstructure of SiC conversion layer. In the oxidation test of 100$0^{\circ}C$, the SiC converted graphites exhibited good oxidation resistance compared with the unconverted graphites.

• 한국결정성장학회지
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• 제9권1호
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• pp.14-19
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• 1999

Hexamethyldisilane$(Si_{2}(CH_{3})_{6})$의 single precursor를 사용하여 화학기상증착법으로 $1100^{\circ}C$에서 Si 기판의에 $\beta$-SiC 막을 증착시켰다. 증착과정 중 hexamethyldisilane/$H_{2}$ gas system에 HCI gas를 도입하여 mask 재료에 의해 부분적으로 덮여져 있는 Si 기판에서 SiC 증착의 선택성을 조사하였다. Si 기판과 mask 재료에서 SiC 증착의 선택성을 증진시키기 위해 출발물질과 HCI gas의 공급 방법을 변화시켰다. 결국, HCI gas를 도입함으로서 SiC 증착의 선택성은 증진되었고 펄스 형태로의 gas 공급 방법은 선택성을 향상시키는데 효율적이었다.

• 한국세라믹학회지
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• 제50권2호
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• pp.122-126
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• 2013

The surface roughness of the inner and outer surfaces of a tube is an important requirement for nuclear fuel cladding. When an inner SiC clad tube, which is considered as an advanced Pressurized Water Cooled Reactor (PWR) clad with a three-layered structure, is fabricated by Chemical Vapor Deposition (CVD), the surface roughness of the substrate, graphite, is an important process parameter. The surface character of the graphite substrate could directly affect the roughness of the inner surface of SiC deposits, which is in contact with a substrate. To evaluate the effects of the surface roughness changes of a substrate, SiC deposits were fabricated using different types of graphite substrates prepared by the following four polishing paths and heat-treatment for purification: (1) polishing with #220 abrasive paper (PP) without heat treatment (HT), (2) polishing with #220 PP with HT, (3) #2400 PP without HT, (4) polishing with #2400 PP with HT. The average surface roughnesses (Ra) of each deposited SiC layer are 4.273, 6.599, 3.069, and $6.401{\mu}m$, respectively. In the low pressure SiC CVD process with a graphite substrate, the removal of graphite particles on the graphite surface during the purification and the temperature increasing process for CVD seemed to affect the surface roughness of SiC deposits. For the lower surface roughness of the as-deposited interlayer of SiC on the graphite substrate, the fine controlled processing with the completed removal of rough scratches and cleaning at each polishing and heat treating step was important.

• 한국재료학회지
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• 제14권5호
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• pp.343-347
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• 2004

We investigated the growth feasibility of polycrystalline Si film on mica substrate for the transfer of the layer to a plastic substrate. The annealing temperature was limited up to $600^{\circ}C$ because of crack development in the mica substrate. Amorphous Si film was deposited on mica substrate by PECVD and was crystallized by furnace annealing. During the annealing, bubbles were formed at the Si/mica interface. The bubble formation was avoided by the Ar-plasma treatment before amorphous Si deposition. A uniform and clean polycrystalline Si film was obtained by coating $NiCl_2$ on the amorphous Si film and annealing at $500^{\circ}C$ for 10 h. The conventional Si lithography was possible on the mica substrate and the devices fabricated on the substrate could be transferred to a plastic substrate.

• The Korean Journal of Ceramics
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• 제3권3호
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• pp.163-168
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• 1997

Most of heteroepitaxial $\beta$-SiC thin films have been successfully grown on Si(100) adapting a carburizing process, by which a few atomic layers of substrate surface is chemically converted to very thin SiC layer using hydrocarbon gas sources. Using an organo-silicon precursor, bis-trimethylsilymethane (BTMSM, [$C_7H_{20}Si_2$]), heteropitaxial $\beta$-SiC thin films were successfully grown directy on Si substrate without a carburized buffer layer. The defect density of the $\beta$-SiC thin films deposited without a carburized layer was as low as that of $\beta$-SiC films deposited on carburized buffer layer. In addition, void density was also reduced by the formation of self-buffer layer using BTMSM instead of carburized buffer layer. It seems to be mainly due to the characteristic bonding structure of BTMSM, in which Si-C was bonded alternately and tetrahedrally (SiC$_4$).

• 한국세라믹학회지
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• 제36권1호
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• pp.55-60
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• 1999

Hexamethyldisilane(Si2(CH3)6)의 single precursor를 출발원료로 사용하여 화학기상증착법으로 Si 기판위에 buffer층의 형성 없이 $\beta$-SiC의 박막을 증착하였다. Si 기판과 SiO2 mask에서 SiC 박막 증착의 선택성을 위하여 HCI의 식각 가스를 도입하였고 출발원료와 HCI 가스의 공급방법을 변화시켰다. SiC 박막 증착 과정에서 HCI 가스의 도입이 막의 표면 조도에 미치는 영향을 조사하였고 Hall 측정을 통하여 SiC 막의 전기적 특성을 조사하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.202-205
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• 2002

Polycrystalline silicon thin film transistors (poly-Si TFTs) are used in a wide variety of applications, and will figure prominently future high-resolution, high-performance flat panel display technology However, it was very difficult to fabricate high performance poly-Si TFTs at a temperature lower than 300$^{\circ}C$ for glass substrate. Conventional process on a glass substrate were limited temperature less than 600$^{\circ}C$ This paper proposes a high temperature process above 750$^{\circ}C$ using a flexible molybdenum substrate deposited hydrogenated amorphous silicon (a-Si:H) and than crystallized a rapid thermal processor (RTP) at the various temperatures from 750$^{\circ}C$ to 1050$^{\circ}C$. The high temperature annealed poly-Si film illustrated field effect mobility higher than 30 $\textrm{cm}^2$/Vs, achieved I$\sub$on//I$\sub$off/ current ratio of 10$^4$ and crystall volume fraction of 92%. In this paper, we introduce the new TFTs Process as flexible substrate very promising roll-to-roll process, and exhibit the properties of high temperature crystallized poly-Si Tn on molybdenum substrate.

• ETRI Journal
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• 제26권3호
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• pp.281-284
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• 2004

We demonstrate a new fabrication method for adjusting the temperature dependence of a polymeric arrayed-waveguide grating (AWG) on a Si substrate. A temperature-dependent wavelength shift of-0.1nm/$^{\circ}C$ in a polymeric AWG on a Si substrate is reduced of+0.1nm/$^{\circ}C$ by detaching part of the polymer film, including the grating channel region of the AWG, from the Si substrate while the other parts remain fixed on the substrate.

• 한국전기전자재료학회논문지
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• 제25권2호
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• pp.91-95
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• 2012

ZnO thin films were deposited on p-type 4H-SiC substrate by pulsed laser deposition. ZnO nanowires were formed on p-type 4H-SiC substrate by furnace. Ti/Au electrodes were deposited on ZnO thin film/SiC and ZnO nanowire/SiC structures, respectively. Structural and crystallographical properties of the fabricated ZnO thin film/SiC and ZnO nanowire/SiC structures were investigated by field emission scanning electron microscope and X-ray diffraction. In this work, resistance and sensitivity of ZnO thin film/SiC gas sensor and ZnO nanowire/SiC gas sensor were measured at $300^{\circ}C$ with various CO gas concentrations (0%, 90%, 70%, and 50%). Resistance of gas sensor decreases at CO gas atmosphere. Sensitivity of ZnO nanowire/SiC gas sensor is twice as big as sensitivity of ZnO thin film/SiC gas sensor.