Journal of the Korean Crystal Growth and Crystal Technology (한국결정성장학회지)

The Korea Association of Crystal Growth (한국결정성장학회)
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Selective chemical vapor deposition of $\beta$-SiC on Si substrate using hexamethyldisilane/HCl/$H_{2}$ gas system

Hexamethyldisilane/HCl/$H_{2}$ gas system을 이용한 Si 기판에서 $\beta$-SiC의 선택적 화학기상증착

  • 양원재 (한양대학교 세라믹공학과) ;
  • 김성진 (삼성종합기술원) ;
  • 정용선 (한양대학교 세라믹공정연구센터) ;
  • 오근호 (한양대학교 세라믹공정연구센터)
  • Published : 1999.02.01
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Abstract

Using a single precursor of hexamethyldisilane $(Si_{2}(CH_{3})_{6})$, $\beta$-SiC film was successfully deposited on a Si substrate at $1100^{\circ}C$ by a chemical vapor deposition method. Selectivity of SiC deposition on a Si substrate partially covered with a masking material was investigated by introducing HCl gas into hexamethyldisilane/$H_{2}$ gas system during the deposition. The schedule of the precursor and HCl gas flows was modified so that the selectivity of SiC deposition between a Si substrate and a mask material should be improved. It was confirmed that the selectivity of SiC deposition was improved by introducing HCl gas. Also, the pulse gas flow technique was effective to enhance the selectivity.

Hexamethyldisilane$(Si_{2}(CH_{3})_{6})$의 single precursor를 사용하여 화학기상증착법으로 $1100^{\circ}C$에서 Si 기판의에 $\beta$-SiC 막을 증착시켰다. 증착과정 중 hexamethyldisilane/$H_{2}$ gas system에 HCI gas를 도입하여 mask 재료에 의해 부분적으로 덮여져 있는 Si 기판에서 SiC 증착의 선택성을 조사하였다. Si 기판과 mask 재료에서 SiC 증착의 선택성을 증진시키기 위해 출발물질과 HCI gas의 공급 방법을 변화시켰다. 결국, HCI gas를 도입함으로서 SiC 증착의 선택성은 증진되었고 펄스 형태로의 gas 공급 방법은 선택성을 향상시키는데 효율적이었다.

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