• Korean Journal of Poultry Science
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• v.11 no.2
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• pp.86-92
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• 1984

Present study was carried out to estimate phenotypic and genetic parameters influencing body weight (BW) at 4 weeks of age egg breadth (EB), egg length(EL), egg shape index (SI) and egg weight (EW) at 32 weeks of age and egg numbers (EN) up to 38 weeks of age in broiler male and female lines. The data were collected from closed White Plymouth Rock (female line; G) and Cornish (male line; C) flocks involving 1193 pullets from 211 dams and 48 sires in 1982. The results obtained are summarized as follow: 1. General performance for various trails of lines C and G. The means and standard deviations of BW, EB, EL, SI, EW and EN were 668.34${\pm}$47.18, 4.23${\pm}$0,11, 5.49 ${\pm}$0.19, 77.06${\pm}$2.98, 55.73${\pm}$3.54 and 59.72${\pm}$13.39 in line C, respectively and 487.89${\pm}$ 41.43, 4.22${\pm}$0.11, 5.51${\pm}$0.19, 76.72${\pm}$3.20, 55.43${\pm}$3.26 and 76.93${\pm}$12.17 in line G, respectively. 2. Heritability Heritabilities were estimated from sire, dam and combined components. Estimates for BW, EB, EL, SI, EW and EN from combined components were 0.30, 0.29, 0,40, 0.22, 0.45 and 0.60 in line C, respectively and 0.33, 0.23, 0.28, 0.13, 0.49 and. 0.33 in line G, respectively. 3. Correlation Genetic and phenotypic correlations showed similar trend in line C and G. Genetic correlations, estimated EW with EB and EL, were high and positive (line C; 0.99, 0.75, respectively and line G; 0.94, 0.82, respectively), also correlation of EB with EL was 0.58 (both lines; 0.58). High and negative genetic correlations were shown between SI and EL in line C and G (-0.70, -0.65, respectively). Genetic correlations between SI and EW were relatively low and negative in line C and G (-0.11, -0.19, respectively) and between SI and EN were relatively low and positive in line C and G (0.25, 0.17, respectively). Between other traits, low genetic correlations were shown in both lines, High and positive correlation was estimated between hatchability and egg shape index and polynomial regression of egg shape index on hatchability was estimated; Y=-216.77＋7.6216X-0.0146939X$^2$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.2
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• pp.216-223
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• 1997

By using aluminum iso - propoxide($Al(OC_3H_7)_3$, AIP), $Al_2O_3$thin films were deposited on (100) single crystal silicon wafer by MOCVD method. The compositions of deposited films were analysed by electron spectroscopy for chemical analyse(ESCA). The morphology and thickness of the deposited films were characterized by scanning electron microscopy. The refractive index and C-V propertied were studied by using ellipsometery and HP4192A, respectively. From the results of ESCA and SEM analysis at low pressure, more uniform and stable stoichiometric film can be obtained compared with that of atmospheric pressure. For optical film usage, required refractive index can be obtained by heat treatment of deposited film. To improve C -V characteristics in NMOS device, it is requred to control OH-which is mobile charge in oxide, to form $SiO_2$ layer between $Al_2O_3$ and Si by heat treatment.

• Journal of the Korean Vacuum Society
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• v.19 no.2
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• pp.148-154
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• 2010

We have fabricated $SiO_2$ oxidation thin films by TCP-CVD (transformer coupled plasma chemical vapor deposition) method for passivation layer of OLED (organic light emitting diode). The purpose of this paper is to control and estimate the deposition rate and refracive index characteristics with process parameters. They are power, gas condition, distance of source and substrate and process temperature. The results show that transmittance of thin films is over 90%, rapid deposition rate and stable reflective index from 1.4 to 1.5 at controled process conditions. They are $SiH_4$ : $O_2$ = 30 : 60 [sccm] gas condition, 70 [mm] distance of source and substrate, no-biased substrate and under 80 [$^{\circ}C$] process temperature.

• Journal of Electrical Engineering and Technology
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• v.10 no.3
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• pp.1066-1074
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• 2015

This paper presents the reverse recovery characteristic according to the change of switching states when Si diode and SiC diode are used as clamp diode and proposes a method to minimize the switching loss containing the reverse recovery loss in the neutral-point-clamped inverter at low modulation index. The previous papers introduce many multiple circuits replacing Si diode with SiC diode to reduce the switching loss. In the neutral-point-clamped inverter, the switching loss can be also reduced by replacing device in the clamp diode. However, the switching loss in IGBT is large and the reduced switching loss cannot be still neglected. It is expected that the reverse recovery effect can be infrequent and the switching loss can be considerably reduced by the proposed method. Therefore, it is also possible to operate the inverter at the higher frequency with the better system efficiency and reduce the volume, weight and cost of filters and heatsink. The effectiveness of the proposed method is verified by numerical analysis and experiment results.

• Bulletin of the Korean Chemical Society
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• v.31 no.10
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• pp.2909-2912
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• 2010

Hydrogenated microcrystalline silicon (${\mu}c$-Si:H) thin film for solar cells is prepared by plasma-enhanced chemical vapor deposition and physical properties of the ${\mu}c$-Si:H p-layer has been investigated. With respect to stable efficiency, this film is expected to surpass the performance of conventional amorphous silicon based solar cells and very soon be a close competitor to other thin film photovoltaic materials. Silicon in various structural forms has a direct effect on the efficiency of solar cell devices with different electron mobility and photon conversion. A Raman microscope is adopted to study the degree of crystallinity of Si film by analyzing the integrated intensity peaks at 480, 510 and $520\;cm^{-1}$, which corresponds to the amorphous phase (a-Si:H), microcrystalline (${\mu}c$-Si:H) and large crystals (c-Si), respectively. The crystal volume fraction is calculated from the ratio of the crystalline and the amorphous phase. The results are compared with high-resolution transmission electron microscopy (HR-TEM) for the determination of crystallinity factor. Optical properties such as refractive index, extinction coefficient, and band gap are studied with reflectance spectra.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.11
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• pp.1323-1328
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• 1988

Thermally grown $SiO_2$ films on silicon have been thermally nitrided in the $NH_3$ gas ambient and their properties have been investigated by analyzing the AES data and the results of the I-V and the C-V measurements. The Auger depth profile show that the nitrogen-rich layers are formed at the nitrided oxide film surface and near the $SiO_2$-Si interface. The higher the nitridation temperature is, the larger the refractive index of nitroxide film is. And the thinner the oxide film to be nitrided for the same nitridation temperature is, the larger the refractive index of nitroxide film is. When thin $SiO_2$ film is thermally nitrided, the I-V characteristics show the Fowler-Nordheim conduction fashion. Flatband voltages of $SiO_2$ films are shifted by nitridation, due to the fixed charge formation.

• Journal of Biomedical Engineering Research
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• v.21 no.3 s.61
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• pp.233-237
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• 2000

In general. fiber-optic medical endoscopes are made from glass step index (SI) fibers. These endoscopes have limitations in both image quality and mechanical properties. In particular. the image resolution of the SI endoscopes is limited to about 5$\mu$m. In this study the image resolution of plastic graded index (GRIN) super-resolution image guides with pixel sizes from 7 to 2.5 $\mu$m were measured and compared with those of 91ass SI image guides. There is an improvement in resolution of the plastic GRIN image guides as the microfiber diameter is reduced from 7 $\mu$m to 2.5 $\mu$m. The measured resolution of plastic GRIN image guide with 2.5 $\mu$m microfibers is more than a factor of two higher than that of g1ass SI image guide with 5$\mu$m microfibers. This new design of optical systems could have a major impact on a wide array of future optical systems used in defense. industrial, and medical applications.

• Proceedings of the Optical Society of Korea Conference
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• 2002.07a
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• pp.46-47
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• 2002

Flame Hydrolysis Deposition (FHD) 공정은 SiC1$_4$, GeCl$_4$, POC1$_3$, BCl$_3$ 등의 원료를 사용하여 Si wafer 및 유리기판 위에 silicate soot를 증착하는 방법이며, 증착된 soot는 고온에서 소결과정을 거쳐 B$_2$O$_3$-P$_2$O$_{5}$ -GeO$_2$-SiO$_2$(BPGS)계 유리막으로 형성된다. 유리막의 굴절률은 SiC1$_4$, GeCl$_4$, POC1$_3$, BCl$_3$ 등의 원료 유량을 조절하여 변화가능하며 이를 이용하여 광도파로를 제작할 수 있다 특히 광통신에 사용할 수 있는 광증폭기 등의 능동형 광소자 제작을 위해서는 FHD공정을 통해 형성된 soot에 Er$^{3+}$ 등의 희토류 원소를 첨가하여야 한다. (중략)

• Biomedical Science Letters
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• v.18 no.4
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• pp.384-390
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• 2012

Diabetes mellitus (DM) is considered to be a serious metabolic disease which may cause systemic complications. The present study was designed to clarify a difference on stress, physiological variables and their correlation between diabetic (DM group) and nondiabetic adults (control group). The levels of body weight, waist circumference, blood pressure, body mass index, body fat mass, total cholesterol (TcH), triglyceride (TG), aspartate aminotransferase (AST), alanine aminotransferase (ALT), gamma-glutamyltransferase (GGT), total bilirubin (TB), autonomic balance (AB), stress index (SI), fatigue index (FI), and heart rate (HR) were all significantly higher in the DM group than in the control group. However, the levels of autonomic activity (AA), stress resistance (SR), and electrocardiac stability (ES) were significantly lower in the DM group than in the control group. The percentages of persons with abnormal levels in the Tch, high density lipoprotein, low density lipoprotein, TG, AST, ALT and GGT were significantly greater in the DM group than in the control group. In the correlation of glucose and hemoglobin A1c (HBA1c) to stress indices, the DM group had a significant relationship with AB, SR, SI, FI, ES, and HR, whereas the control group had no significant relationship with these, excepting AB. These results suggest that DM was harmfully associated with body, biochemical and stress indices and that blood glucose and HBA1c levels must be exhaustively regulated.

• Journal of the korean academy of Pediatric Dentistry
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• v.47 no.3
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• pp.327-336
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• 2020

The purpose of this study was to examine the characteristics of the high caries risk group of 12-year-old children in Korea. Oral health status and interview data were collected from 23,089 children aged 12 years who participated in the 2015 Korean Children's Oral Health Survey. Subjects were classified into high-risk and low-risk groups according to the Significant caries (SiC) index, and the influence of each variable was analyzed. As a result of the study, the SiC index of the high-risk group was 5.08, which was about 9.6 times higher than the low-risk group. The risk factors associated with the high-risk group were in the order of the number of sealant teeth, dental treatment demand for the past year, perceived oral health status, gender, region, frequency of snack intake per day, and use of oral hygiene aids. In order to improve the oral health of children, appropriate preventive treatment and oral health education should be carried out with reference to the items indicated as risk factors in the high-risk group of dental caries.