• 제목/요약/키워드: SiC coating

검색결과 563건 처리시간 0.025초

회전코팅법을 이용한 BST 박막의 제조 및 전기적 특성에 관한 연구 (The Preparation and Electrical Characteristics of BST Thin Film by Spin-Coating Method)

  • 기현철;김덕근;이승우;홍경진;이진;김태성
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1999년도 추계학술대회 논문집 학회본부 C
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    • pp.918-920
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    • 1999
  • Recently, the ceramics of high permittivity are applied to DRAM and FRAM. In this study, (Ba, Sr)$TiO_3$ (BST) ceramics thin films were prepared by Sol-Gel method. BST solution was made and spin-coated on Pt/$SiO_2$/Si substrate at 4000[rpm] for 10 seconds. Coating process was repeated 3 times and then sintered at $750[^{\circ}C]$ for 30 minutes. Each specimen was analyzed structure and electrical characteristics. Thickness of BST ceramics thin films are about $2000[\AA]$. Dielectric constant and loss of thin films was little decreased at $1[kHz]{\sim}1[MHz]$. Dielectric constant and loss to frequency were 250 and 0.02 in BST3. In accordance with applied voltage, property of leakage current was stability when the was $0{\sim}3$[V]. According to voltage, leakage current was increased exponentially at $4{\sim}7$[V].

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졸겔공정을 이용한 $Bi_{4-x}Sm_xTi_3O_{12}(0<\leqx\geq2)$ 박막제조 및 특성평가 (Preparation and Characterization of $Bi_{4-x}Sm_xTi_3O_{12}(0<\leqx\geq2)$ Thin Films Using Sol-Gel Processing)

  • 이창민;고태경
    • 한국세라믹학회지
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    • 제34권8호
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    • pp.897-907
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    • 1997
  • Thin films of Bi4-xSmxTi3O12(0$\leq$x$\leq$2) were prepared on Pt/Ti/SiO2/Si(100) at $700^{\circ}C$ using spin-coating with sols derived from Bi-Sm-Ti complex alkoxides. From X-ray diffraction analysis, it was observed that Sm-substituted phases resembled ferroelectric Bi4Ti3O12 in structure. Variations of their lattice parameters depending on the amount of Sm-substitution showed that an anomalous structural distortion might exist at x=1. The grain sizes of the thin films decreased from 0.115 ${\mu}{\textrm}{m}$ to 0.078${\mu}{\textrm}{m}$ with increasing the amount of Sm-substitution. The dielectric constants and the remanent polarizations of the thin films decreased with increasing the amount of the Sm-substitution, which were related to decrease of the stereo-active Bi3+ ion contributing to polarization. However, these values were exceptionally high at x=1, compared to those of the other substituted phases. Such an anomaly suggests that the phase of x=1 has 1:1 chemical ordering between Sm and Bi in structure. The thin films of all compositions except x=2 showed ferroelectricity. The thin film of x=2 was paraelectric, whose grains were too fine to exhibit ferroelectricity.

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Effect of Al and Mg Contents on Wettability and Reactivity of Molten Zn-Al-Mg Alloys on Steel Sheets Covered with MnO and SiO2 Layers

  • Huh, Joo-Youl;Hwang, Min-Je;Shim, Seung-Woo;Kim, Tae-Chul;Kim, Jong-Sang
    • Metals and materials international
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    • 제24권6호
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    • pp.1241-1248
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    • 2018
  • The reactive wetting behaviors of molten Zn-Al-Mg alloys on MnO- and amorphous (a-) $SiO_2$-covered steel sheets were investigated by the sessile drop method, as a function of the Al and Mg contents in the alloys. The sessile drop tests were carried out at $460^{\circ}C$ and the variation in the contact angles (${\theta}_c$) of alloys containing 0.2-2.5 wt% Al and 0-3.0 wt% Mg was monitored for 20 s. For all the alloys, the MnO-covered steel substrate exhibited reactive wetting whereas the $a-SiO_2$-covered steel exhibited nonreactive, nonwetting (${\theta}_c>90^{\circ}$) behavior. The MnO layer was rapidly removed by Al and Mg contained in the alloys. The wetting of the MnO-covered steel sheet significantly improved upon increasing the Mg content but decreased upon increasing the Al content, indicating that the surface tension of the alloy droplet is the main factor controlling its wettability. Although the reactions of Al and Mg in molten alloys with the $a-SiO_2$ layer were found to be sluggish, the wettability of Zn-Al-Mg alloys on the $a-SiO_2$ layer improved upon increasing the Al and Mg contents. These results suggest that the wetting of advanced high-strength steel sheets, the surface oxide layer of which consists of a mixture of MnO and $SiO_2$, with Zn-Al-Mg alloys could be most effectively improved by increasing the Mg content of the alloys.

Si and Mg doped Hydroxyapatite Film Formation by Plasma Electrolytic Oxidation

  • Park, Seon-Yeong;Choe, Han-Cheol
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2016년도 추계학술대회 논문집
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    • pp.195-195
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    • 2016
  • Titanium and its alloys are widely used as implants in orthopedics, dentistry and cardiology due to their outstanding properties, such as high strength, high level of hemocompatibility and enhanced biocompatibility. Hence, recent works showed that the synthesis of new Ti-based alloys for implant application involves more biocompatible metallic alloying element, such as, Nb, Hf, Zr and Mo. In particular, Nb and Hf are one of the most effective Ti ${\beta}-stabilizer$ and reducing the elastic modulus. Plasma electrolyte oxidation (PEO) is known as excellent method in the biocompatibility of biomaterial due to quickly coating time and controlled coating condition. The anodized oxide layer and diameter modulation of Ti alloys can be obtained function of improvement of cell adhesion. Silicon (Si) and magnesium (Mg) has a beneficial effect on bone. Si in particular has been found to be essential for normal bone and cartilage growth and development. In vitro studies have shown that Mg plays very important roles in essential for normal growth and metabolism of skeletal tissue in vertebrates and can be detected as minor constituents in teeth and bone. The aim of this study is to research Si and Mg doped hydroxyapatite film formation by plasma electrolytic oxidation. Ti-29Nb-xHf (x= 0, 3, 7 and 15wt%, mass fraction) alloys were prepared Ti-29Nb-xHf alloys of containing Hf up from 0 wt% to 15 wt% were melted by using a vacuum furnace. Ti-29Nb-xHf alloys were homogenized for 2 hr at $1050^{\circ}C$. Each alloy was anodized in solution containing typically 0.15 M calcium acetate monohydrate + 0.02 M calcium glycerophosphate at room temperature. A direct current power source was used for the process of anodization. Anodized alloys was prepared using 270V~300V anodization voltage at room. A Si and Mg coating was produced by RF-magnetron sputtering system. RF power of 100W was applied to the target for 1h at room temperature. The microstructure, phase and composition of Si and Mg coated oxide surface of Ti-29Nb-xHf alloys were examined by FE-SEM, EDS, and XRD.

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SiC를 이용한 대구경 위성용 망원경 제작 (Development of a Silicon Carbide Large-aperture Optical Telescope for a Satellite)

  • 배종인;이행복;김정원;이경묵;김명훈
    • 한국광학회지
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    • 제33권2호
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    • pp.74-83
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    • 2022
  • 위성 관측 카메라용 대구경 초경량 반사광학계를 제작하기 위해 소재 개발부터 최종 시스템 인증시험까지 전 과정을 수행했다. 완성된 비점보정 3반사경 구조의 위성용 반사광학계 망원경은 주반사경의 구경이 700 mm이고, 망원경 전체 질량은 66 kg이다. 광학소재 및 구조물에 적용하기 위한 반응소결법을 개발했고, 이 방법을 이용해서 실리콘 카바이드(silicon carbide, SiC) 재질의 광학 몸체를 제작하고 소결체의 화학특성, 표면특성, 결정구조를 확인했다. 광학 몸체의 기계적, 화학적 성질을 고려한 연마와 코팅 방법을 개발했으며 화학기상증착법을 적용해 SiC 경면 표면 위에 치밀한 SiC 박막을 170 ㎛ 이상 증착함으로써 광학 성능이 우수한 경면을 만들 수 있었다. 반사경 제작 후 반사경과 지지 구조를 조립하고 정렬해서 다양한 광학 시계에 대해 파면 오차를 측정했다. 아울러 우주 환경 및 발사환경에 대한 우주 인증에 맞추어 구성품 및 최종 조립체를 온도와 진동에 대한 환경시험을 실시하여 설계 목표 성능을 달성했음을 확인했다.

질화규소의 소결첨가제의 공침법에 의한 균일혼합 (Homogeneous Mixing of Si3N4 with Sintering Additives by Coprecipitation Method)

  • 김지순
    • 한국세라믹학회지
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    • 제30권10호
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    • pp.829-837
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    • 1993
  • Chemically and geometrically homogeneous mixing of Si3N4 powders with sintering additives(YAG, 3Y2O3$.$5Al2O3) was attempted via coprecipitation method. X-ray dot maps for the additive elements(Al and Y) showed that the additives are evenly distributed in the powder mixture prepared by coprecipitation method(CP). TEM observation of the coprecipittion-treated Si3N4 powders revealed that they are covered with extremely fine crystallites of additive. The shift in isoelectric point(IEP) of Si3N4 powders from pH 6.7 to pH 7.9 after coprecipitation mixing gave another evidence for coating of Si3N4 powders with YAG additives. SIMS analysis for composition on the surface and in the matrix of mixed powders showed that the YAG additives are highly enriched on the surface of coprecipitation-treated Si3N4 powders. Especially when a small amount of additive was used, the effect of homogeneous additive distribution on densification was preceptible: After pressureless-sintering of powder compacts containing 5 mol% YAG at 1800$^{\circ}C$ for 0.5h, a sintered density of 96.5% theoretical was obtained from the specimens prepared bycoprecipitation in comparison with 93.8% from the mechanically-mixed one.

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단결정 실리콘 태양전지를 위한 실리콘 질화막의 밴드갭과 결함사이트 (Band Gap and Defect Sites of Silicon Nitride for Crystalline Silicon Solar Cells)

  • 정성욱;이준신
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2010년도 하계학술대회 논문집
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    • pp.365-365
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    • 2010
  • In this paper, silicon nitride thin films with different silane and ammonia gas ratios were deposited and characterized for the antireflection and passivation layer of high efficiency single crystalline silicon solar cells. As the flow rate of the ammonia gas increased, the refractive index decreased and the band gap increased. Consequently, the transmittance increased due to the higher band gap and the decrease of the defect states which existed for the 1.68 and 1.80 eV in the SiNx films. The reduction in the carrier lifetime of the SiNx films deposited by using a higher $NH_3/SiH_4$ flow ratio was caused by the increase of the interface traps and the defect states in/on the interface between the SiNx and the silicon wafer. The silicon and nitrogen rich films are not suitable for generating both higher carrier lifetimes and transmittance. These results indicate that the band gap and the defect states of the SiNx films should be carefully controlled in order to obtain the maximum efficiency for c-Si solar cells.

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Synthesis and Performance of Li2MnSiO4 as an Electrode Material for Hybrid Supercapacitor Applications

  • Karthikeyan, K.;Amaresh, S.;Son, J.N.;Lee, Y.S.
    • Journal of Electrochemical Science and Technology
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    • 제3권2호
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    • pp.72-79
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    • 2012
  • $Li_2MnSiO_4$ was synthesized using the solid-state method under an Ar atmosphere at three different calcination temperatures (900, 950, and $1000^{\circ}C$). The optimization of the carbon coating was also carried out using various molar concentrations of adipic acid as the carbon source. The XRD pattern confirmed that the resulting $Li_2MnSiO_4$ particles exhibited an orthorhombic structure with a $Pmn2_1$ space group. Cyclic voltammetry was utilized to investigate the capacitive behavior of $Li_2MnSiO_4$ along with activated carbon (AC) in a hybrid supercapacitor with a two-electrode cell configuration. The $Li_2MnSiO_4$/AC cell exhibited a high discharge capacitance and energy density of $43.2Fg^{-1}$ and $54Whkg^{-1}$, respectively, at $1.0mAcm^{-2}$. The $Li_2MnSiO_4$/AC hybrid supercapacitor exhibited an excellent cycling stability over 1000 measured cycles with coulombic efficiency over > 99 %. Electrochemical impedance spectroscopy was conducted to corroborate the results that were obtained and described.

결정질 실리콘 태양전지를 위한 이층 반사방지막 구조 (Double Layer Anti-reflection Coating for Crystalline Si Solar Cell)

  • 박제준;정명상;김진국;이희덕;강민구;송희은
    • 한국전기전자재료학회논문지
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    • 제26권1호
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    • pp.73-79
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    • 2013
  • Crystalline silicon solar cells with $SiN_x/SiN_x$ and $SiN_x/SiO_x$ double layer anti-reflection coatings(ARC) were studied in this paper. Optimizing passivation effect and optical properties of $SiN_x$ and $SiO_x$ layer deposited by PECVD was performed prior to double layer application. When the refractive index (n) of silicon nitride was varied in range of 1.9~2.3, silicon wafer deposited with silicon nitride layer of 80 nm thickness and n= 2.2 showed the effective lifetime of $1,370{\mu}m$. Silicon nitride with n= 1.9 had the smallest extinction coefficient among these conditions. Silicon oxide layer with 110 nm thickness and n= 1.46 showed the extinction coefficient spectrum near to zero in the 300~1,100 nm region, similar to silicon nitride with n= 1.9. Thus silicon nitride with n= 1.9 and silicon oxide with n= 1.46 would be proper as the upper ARC layer with low extinction coefficient, and silicon nitride with n=2.2 as the lower layer with good passivation effect. As a result, the double layer AR coated silicon wafer showed lower surface reflection and so more light absorption, compared with $SiN_x$ single layer. With the completed solar cell with $SiN_x/SiN_x$ of n= 2.2/1.9 and $SiN_x/SiO_x$ of n= 2.2/1.46, the electrical characteristics was improved as ${\Delta}V_{oc}$= 3.7 mV, ${\Delta}_{sc}=0.11mA/cm^2$ and ${\Delta}V_{oc}$=5.2 mV, ${\Delta}J_{sc}=0.23mA/cm^2$, respectively. It led to the efficiency improvement as 0.1% and 0.23%.

Ti-PCS 혼합용액의 전기방사를 통해 제조된 TiO2-SiO2 나노복합 섬유 (TiO2-SiO2 Nanocomposite Fibers Prepared by Electrospinning of Ti-PCS Mixed Solution)

  • 신동근;진은주;이윤주;권우택;김영희;김수룡;류도형
    • Korean Chemical Engineering Research
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    • 제53권3호
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    • pp.276-281
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    • 2015
  • $TiO_2-SiO_2$ 나노복합소재는 자체가 화학적으로 안정할 뿐만 아니라 광학적, 열적 특성이 매우 우수하여 광화학센서, 촉매 등 다양한 분야에 적용되고 있다. 이러한 구조를 구현하는 방법으로 티타늄이 첨가된 폴리카보실란(PCS) 혼합용액을 전기방사한 후 이를 적절한 산화분위기에서 열처리하여 부직포상의 $TiO_2-SiO_2$ 나노복합섬유를 만들 수 있는데, 이는 기존의 졸겔공정에 의해 제조되는 섬유보다 더 쉽고 안정적인 방법이다. 공정 중 방사된 섬유를 산화분위기에서 $1200^{\circ}C$ 이상까지 열처리하게 되면 크리스토발라이트 기지조직 내에서 아나타제 나노결정상이 매우 균일하게 형성되었다. 또한, 열처리 후 섬유의 표면과 단면은 매우 치밀하고 매끈하였으며 10~20nm 크기의 아나타제 결정입자들이 내부에 균일하게 분포하였다.