• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.221-225
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• 2001

In the paper, we report on the DC and Thermal effect of the GaN based HFET. A physics-based a model was applied and found to be useful for predicting the DC performance and Thermal effect of the GaN based HFET by Various substrate. The performance of device on the sapphire substrates is found to be significantly improve compared with that of a device with an sapphire substrate. The peak drain current of the device achieved at HFET on the SiC substrate

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.5
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• pp.405-409
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• 2001

This paper describes fabrication and characteristics of metal thin-film pressure sensor for working at high temperature. The proposed pressure consists of a chrom thin-film, patterned on a Wheat stone bridge configuration, sputter-deposited onto thermally oxidized Si membranes with an aluminium interconnection layer. The fabricated pressure sensor presents a low temperature coefficient of resistance, high-sensitivity, low non-linearity and excellent temperature stability. The sensitivity is 1.097∼1.21mV/V$.$kgf/$\textrm{cm}^2$ in the temperature range of 25∼200$^{\circ}C$ and the maximum non-linearity is 0.43%FS.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.63-66
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• 2003

In this paper, the electrical characteristics of single oxide layer due to high temperature diffusion process, wafer resistivity and thickness of poly backseat was researched. The oxide quality was examined through capacitance-voltage characteristics, and besides, it will be describe the capacitance-voltage characteristics of the single oxide layer by semiconductor device simulation.

• Transactions of the Society of Information Storage Systems
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• v.1 no.1
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• pp.73-77
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• 2005

In this paper, a new silicon nitride cantilever integrated with silicon heater and piezoelectric sensor has been firstly developed to improve the uniformity of the initial bending and the mechanical stability of the cantilever array for thermo-piezoelectric SPM(scanning probe microscopy) -based data storages. This nitride cantilever shows thickness uniformity less than $2\%$. Data bits of 40 nm in diameter were recorded on PMMA film. The sensitivity of the piezoelectric sensor was 0.615 fC/nm after poling the PZT layer. For high speed operation, 128${\times}$128 probe array was developed.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1991.04a
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• pp.127-133
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• 1991

Acoustic microscopy has attracted much intrest recently as potential mondestructive evalution technique for detecting and sizing defects of surface and sub-surface. Also acoustic emission testing method has been developed for detecting microcracks which is more than 30 umm in length quintitatively on ceramics material. In the present paper, acoustic emission during the four point bending test in hot-pressed sintered Si$\_$3/N$\_$4/ specimen which was stressed bythermal shock has been measured by high sensitive sensing system. The surface and sub-surface cracks were detected by scanning acoustic microscope of 800 MHz and conventional ultrasonic testing in C-scope image. The purpose was to investigate the location and size of cracks by SAM and AE technique, whose experimental datas demontrates good agreement for detecting microcracks.

• Journal of the Korean Society of Fisheries and Ocean Technology
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• v.46 no.4
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• pp.495-502
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• 2010

The effect of load and sliding speed on abrasive wear characteristics of glass fiber/polyurethane (GF/PUR) composites were investigated at ambient temperature by pin-on-disc friction test. The friction coefficient, cumulative wear volume and surface roughness of these materials against SiC abrasive paper were determined experimentally. Experimental results showed that the surface roughness of the GF/PUR composites was increased as applied load was higher in wear test. The cumulative wear volume tended to increase nonlinearly with increase of sliding distance and depended on applied load and sliding speed for these composites. It could be verified by scanning electric microscopy (SEM) photograph of surface tested that major failure mechanisms were lapping layers, ploughing, delamination, deformation of resin and cracking.

• Proceedings of the Korean Institute of Building Construction Conference
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• 2006.05a
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• pp.97-100
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• 2006

This paper report the result of the investigation on the properties of drying shrinkage for alkali-activated slag mortar in different relative humidity Commonly we know that drying shrinkage means lost more moisture but the mechanism of drying shrinkage of alkali activated slag mortar is not entirely due to the quantity of weight loss of water from mortar. pore size distribution and the calcium silicate hydrate gel characteristics have a critical influence on the magnitude of drying shringkage to alkali activated slag mortar. For this investigation, Ca(OH)2, Na2SiO4 were as alkali activator with 5 dosages(6%, 9%, 12%, 15%, 20%) and curing condition were three different relative humidity(35%, 65%, 95%) at $20{\pm}3^{\circ}C$

• Proceedings of the KIEE Conference
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• 1999.07e
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• pp.2361-2363
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• 1999

The conventional SiC-type of lightning arresters in distribution systems has been replaced by ZnO-type because the ZnO-type has characteristics such as outstanding non linearity, high energy absorption capability, surge suppressing performance, and excellent response to abrupt wave. Out of the various types of lightning arrester failures, some which have been often reported could be prevented in advance. Therefore, the preventive countermeasures which can cope with the failures are strongly required. This paper summed up and analyzed the lightning arrester failures which occurred, from 1983 to 1992, in distribution systems in order to provide fundamental data, classified by year, to make countermeasures.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.456-459
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• 2002

This paper describes fabrication and characteristics of ceramic pressure sensor for working at high temperature. The proposed pressure sensor consists of a Ta-N thin-film, patterned on a Wheatstone bridge configuration, sputter deposited onto thermally oxidized Si membranes with an aluminium interconnection layer. The fabricated pressure sensor presents a low temperature coefficient of resistance, high sensitivity, low non-linearity and excellent temperature stability. The sensitivity is 1.097~1.21mV/$V{\cdot}kgf/cm^2$ in the temperature range of $25{\sim}200^{\circ}C$ and the maximum non-linearity is 0.43 %FS.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05b
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• pp.25-28
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• 2005

This paper was investigated the changes of surface properties of high-temperature-vulcanized(HTV) semiconductive silicone rubber due to oxygen plasma discharge. The modifications produced on the silicone surface by oxygen plasma were accessed using x-ray photoelectron spectroscopy(XPS), contact angle and Scanning Electron Microscope(SEM). The results of the chemical analysis showed that C-H bonds were broken due to plasma discharge and Silica-like bonds (SiOx. x=3~4) increased. It is thought that the above changes lead to the increase of surface energy of high-temperature-vulcanized(HTV) semiconductive silicone rubber. The micromorphology of surface and hydrophobicity due to plasma discharge based on our results were discussed.