• Korean Journal of Materials Research
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• v.7 no.2
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• pp.152-156
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• 1997

In this paper, I meritioned ,I study on thc rnechanochernic;~l effec ts of grountl iljckite To investigate the mechanochemical effects of ground tlickite 1,y planet,~r\- mill. a structul-ill i~nalvsis of dickite prepared with different grinding time has been made 11y X-ray diffraction and ilifierenti,~l tl~i.~-ni;~i analysis. 'l'he $SiO_{4}$ hecira was unchanged bl- milling and remained ;is the local ordering unit s t t - ~ c ~ u ~ - c ~ s in the ground dickitc samples I ) v analyzing the radial distribution function. On the other hand, with an increi~se of the grinding time a decrease of coordination number and atomic distance bet\vccn aluminum and oxygen hi1c.r l~een octurreil, and Li~~antitativcl\. coniirrned them This result corresponded to the local c,hange around aliimi~iuni I>V tliftercntii~l t1ii:rm;il ani~lysis. Therefore, the mechanochemical phenomina of ground tiickite werc3 h e to the local c~l~mge around aluminum \IT. the prolonged grinding.

• Journal of Welding and Joining
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• v.13 no.1
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• pp.103-114
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• 1995

Plasma Transferred arc(PTA) hard facing process has been developed to obtain an overlay weld metal having excellent wear resistance. The effect of Ti, TiSi$_{2}$ and TiC powders addition on the surface of Aluminum alloy 5083 has been investigated with PTA process. This paper describes the result of test the performance of the overlay weld metal. The result can be summarized as follows 1. Intermetallic compound is formed on surface of base metal in Ti or TiSi$_{2}$ powder but the reaction with surface of base metal is little seen in TiC powder. 2. In formation of composite layer on aluminum alloy surface by plasma transferred arc welding process, high melting ceramics like TiC powder is excellent. 3. The multipass welding process is available for formation of high density of powder. But the more number of pass, the less effect of powder, it is considered, and limits of number of pass. 4. By increasing area fraction of TiC powder on Al alloy surface, in especially TiC powder the hardness increase more than 40% area fraction and 88% shows about Hv 700.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.3
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• pp.28-37
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• 1996

Syntax notation one (ASN.1) defined by ITU-T and ISO, is a formal abstrct specification language which has been widely used in international standards specifiation to inteconnect distributed open systems. It si necessary to have well defined encoder/decoder modules which taranslate ASN.1 datum to BER octets stream to interconnect distributed open systems. In this paper, we designed and implemented a new ASN.1-to-C compiler, called HYASNC (hanyang ASN.1-to-C), which atutomatically translates and ASN.1-to-C compiler, called HYASNC (hanyang ASN.1-to-C), which automatically translates an ASN.1 specification into C-language BER encoders and decoders with simple and neat I/F for the defined ASN.1 data types, and enhanced BER (basic encoding rules)encoding/decoding libraries, called HY(hanyang)BER library, and useful utility functions. And this paper discusses HYASNC compiler, HY BER runtime library's design and implementation principles, and also evaluates the perfomrance of HY BER library and the interoperability with other ASN.1 compilers.

• Journal of Sensor Science and Technology
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• v.21 no.6
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• pp.425-428
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• 2012

This paper presents the fabrication and characterization of graphene based hydrogen sensors. Graphene was synthesized by annealing process of Ni/3C-SiC thin films. Graphene was transferred onto oxidized Si substrates for fabrication of chemiresistive type hydrogen sensors. Au electrode on the graphene shows ohmic contact and the resistance is changed with hydrogen concentration. Nanoparticle catalysts of Pd and Pt were decorated. Response factor and response (recovery) time of hydrogen sensors based on the graphene are improved with catalysts. The response factors of pure graphene, Pt and Pd doped graphenes are 0.28, 0.6 and 1.26, respectively, at 50 ppm hydrogen concentration.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.7
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• pp.1363-1374
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• 2009

This paper reviews the characteristics and technical trends in Power MOSFET technology that are leading to improvements in power loss for power electronic system. The silicon bipolar power transistor has been displaced by silicon power MOSFET's in low and high voltage system. The power electronic technology requires the marriage of power device technology with MOS-gated device and bipolar analog circuits. The technology challenges involved in combining power handling capability with finger gate, trench array, super junction structure, and SiC transistor are described, together with examples of solutions for telecommunications, motor control, and switch mode power supplies.

• Proceedings of the KIEE Conference
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• 1989.07a
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• pp.359-363
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• 1989

Recently, it is reported that the behavior of thermal $SiO_2$ under high electric field and current condition has a major effect on MOS device degration. Furthermore, when thin oxide films are applied in practical device, the presence of oxide defects will be a serious problem. In this paper, because TDDB is the useful method to measure the effective density of defects, we stressed MOS structure that is 150 A of thermally grown $SiO_2$as a function of electric field (9-19 MV/cm), temperature ($22^{\circ}C$ - $150^{\circ}C$) and current. By examing TDDB under positive voltage, long-term oxide breakdown reliabiliy is described. From these data, breakdown wearout limitation for the oxide films can be characterized.

• Journal of the Korean Ceramic Society
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• v.27 no.4
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• pp.457-464
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• 1990

This paper presents the influence of the loading rate on the room temperature fracture toughness of a brittle Al2O3 and a SiC whisker reinforced Al2O3 composite. Dynamic fracture toughness tests were conduced using compressive fatigue pre-cracked notched round bars loaded in tension to produce a stress intensity rate K1=106 MPa√m/sec. The experimental results show that for each loading rate the fracture toughness values obtained for the ceramic matrix composite are higher than the corresponding values for the single phase alumina. In addition, both the reinforced and unreinforced ceramic are singnificantly tougher under dynamic loading than static loading. This dynamic and quasi-static fracture initiation behaviro can be interpreted by identifying quantitatively the mode of fractuer initiation as a function of loading rate.

• Journal of Advanced Marine Engineering and Technology
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• v.18 no.2
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• pp.41-53
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• 1994

In this paper, rotating-bending fatigue tests of the SiC-whisker- reinforced 6061-T6 aluminum alloy and 6061-T6 alumiunm alloy made by power metallurgy were carried out to investigate the fatigue characteristics of plain and notched specimens at room temperature. The fatigue mechnisms in both materials were clarified through successive surface observations using the plastic replica method. In the case of the SiC-whisker-reinforced composites, there are whisker rich and poor zones and the fatigue crack is nucleated from the end of whiskers near the boundary. On the other hand, in the case of the 6061-T6 aluminum alloy, the fatigue crack is nucleated from defects and propagates by shear. Moreover, the results were discussed based on linear notch mechanics.

• Journal of IKEEE
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• v.24 no.3
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• pp.677-684
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• 2020

In this paper, the energy efficiency of a 4H-SiC UMOSFET with a local floating superjunction (LFS UMOSFET) was compared with a conventional P-shielding UMOSFET. For analysis, P-shielding UMOSFET and LFS UMOSFET were modeled for energy loss and junction temperature. As a result, LFS UMOSFET showed switching loss reduction of 20.6%. In addition, it was confirmed that LFS UMOSFET is applied to a 3-phase inverter, resulting in 33.2% lower power efficiency and 28.1% lower junction temperature than P-shielding UMOSFET. Electrical characteristics were simulated using Sentaurus TCAD, and the power circuit was simulated with the modelled UMOSFET using PSIM, a power circuit simulator.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.3
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• pp.228-233
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• 2001

This paper presents the optimized design, fabrication and thermal characteristics of micro-heaters for thermal MEMS (micro elelctro mechanical system) applications usign SOI (Si-on-insulator) and trench structures. The micro-heater is based on a thermal measurement principle and contains for thermal isolation regions a 10㎛ thick Si membrane with oxide-filled trenches in the SOI membrane rim. The micro-heater was fabricated with Pt-RTD (resistance thermometer device) on the same substrate by suing MgO as medium layer. The thermal characteristics of the micro-heater wit the SOI membrane is 280$\^{C}$ at input power 0.9W; for the SOI membrane with 10 trenches, it is 580$\^{C}$ due to reduction of the external thermal loss. Therefore, the micro-heater with trenches in SOI membrane rim provides a powerful and versatile alternative technology for improving the performance of micro-thermal sensors and actuators.