• 한국결정성장학회지
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• 제29권2호
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• pp.45-49
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• 2019

본 연구에서는, 탄소성분으로서 탄화왕겨, 제지슬러지, 커피찌꺼기와 실리카 분말로부터, 비교적 미세한 탄화규소 결정질 응집체를 합성하였다. 탄소성분들과 실리카의 혼합물로부터 탄화규소 응집체를 얻기 위한 주요 반응물질은 열탄화환원 반응에 의해 생성된 일산화규소 기체로 추정되었다. 탄화왕겨, 제지슬러지, 커피찌꺼기와 실리카 분말의 혼합물로부터 열탄화환원반응법을 거쳐 생성된 탄화규소 결정질 응집체들에 대한 XRD 회절패턴으로부터 결정상을 분석하였고, FE-SEM과 FE-TEM을 통한 미세구조, 결정구조 분석이 이루어졌다. 탄화왕겨, 제지슬러지, 그리고 실리카 분말의 시료의 경우, XRD 분석에서는 $35^{\circ}$ 부근의 (111) peak은 비교적 높은 강도를 나타내었다. 탄화왕겨, 제지슬러지, 커피찌꺼기와 실리카 분말의 혼합물로부터 합성된 시료들에 대해 FE-SEM 관찰을 통하여 $1{\mu}m$ 이하의 미세입자들을 관찰하였으며, TEM 측정 결과에서는 탄화규소 결정질상의 (110) 회절패턴들을 확인하였다.

• 한국세라믹학회지
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• 제50권2호
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• pp.122-126
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• 2013

The surface roughness of the inner and outer surfaces of a tube is an important requirement for nuclear fuel cladding. When an inner SiC clad tube, which is considered as an advanced Pressurized Water Cooled Reactor (PWR) clad with a three-layered structure, is fabricated by Chemical Vapor Deposition (CVD), the surface roughness of the substrate, graphite, is an important process parameter. The surface character of the graphite substrate could directly affect the roughness of the inner surface of SiC deposits, which is in contact with a substrate. To evaluate the effects of the surface roughness changes of a substrate, SiC deposits were fabricated using different types of graphite substrates prepared by the following four polishing paths and heat-treatment for purification: (1) polishing with #220 abrasive paper (PP) without heat treatment (HT), (2) polishing with #220 PP with HT, (3) #2400 PP without HT, (4) polishing with #2400 PP with HT. The average surface roughnesses (Ra) of each deposited SiC layer are 4.273, 6.599, 3.069, and $6.401{\mu}m$, respectively. In the low pressure SiC CVD process with a graphite substrate, the removal of graphite particles on the graphite surface during the purification and the temperature increasing process for CVD seemed to affect the surface roughness of SiC deposits. For the lower surface roughness of the as-deposited interlayer of SiC on the graphite substrate, the fine controlled processing with the completed removal of rough scratches and cleaning at each polishing and heat treating step was important.

• Composites Research
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• 제35권3호
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• pp.161-174
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• 2022

SiC 섬유강화 복합체는 경수형 원자로의 안전성을 획기적으로 향상시킬 수 있는 사고저항성 핵연료 피복관 소재이다. 지르코늄 합금 피복관 및 금속기반 사고저항성 핵연료 피복관에 비해, 중대 사고 환경에서도 우수한 구조적 안정성을 가지고 부식 속도가 매우 낮아, 사고 시 원자로의 온도를 낮추고 사고 진행을 늦출 수 있다. 본 논문에서는 현재 개발되고 있는 사고저항성 SiC 복합체 핵연료 피복관의 개념 및 가동/사고환경에서의 다양한 특성, 상용화를 위해 해결해야 할 다양한 이슈에 대해서 소개하고자 한다.

• 한국진공학회지
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• 제12권2호
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• pp.130-135
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• 2003

최근, poly-Si 박막은 저가의 박막소자응용을 위하여 사용되어 왔다. 그러나, 유리기판 위에서 일반적인 고상결정화(SPC) 방식으로 poly-Si 박막을 얻기는 불가능하다. 이러한 단점 때문에 유리와 같은 저가기판 위에 poly-Si을 결정화하는 연구가 최근 다양하게 진행되고 있다. 본 논문에서는 급속열처리(RTA)를 이용하여 유연한 기판인 몰리브덴 기판 위에서 a-Si:H를 성장시킨 후 고온결정화에 대한 연구를 진행하였다 고온결정화된 poly-Si 박막은 150$\mu\textrm{m}$ 두께의 몰리브덴 기판 위에 성장되었으며 결정화 온도는 고 진공하에서 $750^{\circ}C$~$1050^{\circ}C$ 사이에서 결정화된 시료에 대하여 결정화도, 결정화 면방향, 표면구조 및 전기적 특성이 조사되었다. 결정화온도 $1050^{\circ}C$에서 3분간 결정화된 시료의 결정화도는 92%를 나타내고 있었다. 결정화된 poly-Si 박막으로 제작된 TFT 소자로부터 전계효과 이동도 67 $\textrm{cm}^2$/Vs을 얻을 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.352-352
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• 2010

Silicon Carbide (SiC) power device possesses attractive features, such as high breakdown voltage, high-speed switching capability, and high temperature operation. In general, device design has a significant effect on the switching characteristics. In this paper, we report the effect of the P-base doping concentration ($N_{PBASE}$) on the transient characteristics of 4H-SiC DMOSFETs. By reducing $N_{PBASE}$, switching time also decreases, primarily due to the lowered channel resistance. It is found that improvement of switching speed in 4H-SiC DMOSFETs is essential to reduce the and channel resistance. Therefore, accurate modeling of the operating conditions are essential for the optimization of superior switching performance.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2001년도 하계종합학술대회 논문집(2)
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• pp.5-8
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• 2001

This paper describes the development of SiC MOSFET model for high temperature applications. The temperature dependence of the threshold voltage and mobility of SiC MOSFET is quite different from that of silicon MOSFET. We developed the empirical temperature model of threshold voltage and mobility of SiC MOSFET and implemented into HSPICE. Using this model the MOSFET Id-Vds characteristics as a function of temperature are simillated. Also the SiC CMOS operational amplifieris designed using this model and the temperature dependence of the frequency response, transfer characteristics and slew rate as a function of temperature are analyzed.

• 한국해양공학회지
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• 제10권4호
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• pp.84-91
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• 1996

A fractal analysis on fracture surface of aluminium-particulate SiC composites was attempted. As the volume fraction of SiC in composites increases, the fractal dimension tends to increase. However, no correlation between the fractal dimension and the fracture toughness in terms of critical energy release rate was observed. Since the fractal dimension represents the roughness of fracture surface, the fracture toughness would be a function of not only fracture surface roughness but also additional parameters. Thus the applicability of fractal analysis to the estimation of fracture toughness must depend on the proper choice and interpretation of additioal paramerters. In this paper, the size of characteristic strctural unit for fracture was considered as an additional parameter. As a result, the size appeared to be a function of only volume fraction of SiC. Finally, a master curve for fracture toughness of aluminium-particulate SiC composites was proposed as a function of fractal dimension and volume fraction of SiC.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.238-242
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• 2001

In this paper, the current-voltage characteristics of a 4H-SiC MESFET is simulated by using the Atlas Simulation tool. we are able to use the simulator to extract more information about the new material 4H-SiC, including the mobility, velocity-field Curve and the Schottky barrier height. We have enabled and used the new simulator to investigate breakdown Voltage and thus predict operation limitiations of 4H-SiC device. Modeling results indicate that the Breakdown Voltage is 197 V and Current is 100 mA

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.238-242
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• 2001

In this paper, the current-voltage characteristics of a 4H-SiC MESFET is simulated by using the Atlas Simulation tool. we are able to use the simulator to extract more information about the new material 4H-SiC, including the mobility, velocity-field Curve and the Schottky barrier height. We have enabled and used the new simulator to investigate breakdown Voltage and thus predict operation limitations of 4H-SiC device. Modeling results indicate that the Breakdown Voltage is 197 V and Current is 100 mA

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.285-285
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• 2007

Friction material in a piezoelectric system is a important part to affect to moving performance. In this paper, alumina ceramics $(AlO_2)$, silicon carbide (SiC), high speed steel and super-hard alloy (WC, Tungsten Carbide) having a hardness knoop of 1000 to 2000 $kg/mm^2$ were tested as a friction material of AF module. Even though $AlO_2$, SiC and high speed steel were a high-hardness material, $AlO_2$ and SiC were worn by a rough surface, and SiC is rusted in humidity condition. AF module using super-hard alloy has showed a stable moving performance in life time test.