Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Silicon Carbide MOSFET Model for High Temperature Applications

SiC MOSFET의 고온모델

  • 이원선 (충북대학교 반도체공학과) ;
  • 오충완 (충북대학교 반도체공학과) ;
  • 최재승 (충북대학교 반도체공학과) ;
  • 신동현 (충북대학교 반도체공학과) ;
  • 이형규 (충북대학교 반도체공학과) ;
  • 박근형 (충북대학교 반도체공학과) ;
  • 김영석 (충북대학교 반도체공학과)
  • Published : 2001.06.01
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Abstract

This paper describes the development of SiC MOSFET model for high temperature applications. The temperature dependence of the threshold voltage and mobility of SiC MOSFET is quite different from that of silicon MOSFET. We developed the empirical temperature model of threshold voltage and mobility of SiC MOSFET and implemented into HSPICE. Using this model the MOSFET Id-Vds characteristics as a function of temperature are simillated. Also the SiC CMOS operational amplifieris designed using this model and the temperature dependence of the frequency response, transfer characteristics and slew rate as a function of temperature are analyzed.

Keywords