• Proceedings of the KIPE Conference
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• 2018.07a
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• pp.536-538
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• 2018

This paper introduces an enhanced interleaved (IL) PFC (Power Factor Correction) boost converter typed 650V Intelligent Power Module (IPM), which is fully optimized hybrid IGBT converter modules; Silicon (Si) IGBT and Silicon Carbide (SiC) diode, for up to 10kW HVAC (Heating, Ventilation, and Air Conditioning) systems. It utilizes newly developed $4^{th}$ Generation Field Stop (FS) trench IGBTs, $EXTREMEFAST^{TM}$ anti-paralleled diodes, SiC Junction Barrier Schottky (JBS) diodes, Bridge rectifiers, Multi-function LVIC, and Built-in thermistor provide good reliable characteristics for the entire system. This module also takes technical advantage of DBC (Direct Bonded Copper) substrate for the better thermal performance. It is shown that the Si IGBT/SiC diode hybrid IL PFC module can achieve excellent EMI performance and greatly enhance the power handling capability or switching frequency of various applications compared to the Si IGBT/Diode. This paper provides an overall description of the newly developed 650V/50A Hybrid SiC IL PFC IPM product.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.194-194
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• 2009

3C-SiC thin films are widely used in extreme environments, radio frequency (RF) environments, and bio-materials for micro/nano electronic mechanical systems (M/NEMS). The mechanical properties of 3C-SiC thin films need to be considered when designing M/NEMS, so Young's Modulus and the hardness need to be accurately measured. Young's Modulus and the hardness are influenced by N-doping. In this paper, we show that the mechanical properties of poly (polycrystalline) 3C-SiC thin films are influenced by the N-doping concentration. Furthermore, we measure the mechanical properties of 3C-SiC thin films for N-doping concentrations of 1%, 3%, and 5%, by using nanoindentation. For films deposited using a 1% N-doping concentration, Young's Modulus and the hardness were measured as 270 GPa and 30 GPa, respectively. When the surface roughness of the thin films was investigated by using atomic force microscopy (AFM), the roughness of the 5% N-doped 3C-SiC thin film was the lowest of all the films, at 15 nm.

• Journal of IKEEE
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• v.26 no.4
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• pp.671-680
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• 2022

In this paper, A 200kW traction motor driver that covers most of the traction motor specification of commercial electric vehicles (EV) is developed. In order to achieve high efficiency and high power density, a next-generation power semiconductors (Silicon carbide, SiC) are applied instead of power semiconductor(IGBT), which is Si based. Through hardware analysis for optimal use of SiC, expected efficiency and heat dissipation characteristics are obtained. A vector control algorithm for an IPMSM (Interior permanent magnet synchronous motor), which is mostly used in EV(Electric vehicle) traction motor, is implemented using DSP (Digital signal processor). In this paper, a prototype traction motor driver based SiC for EV is designed and manufactured, and its performance is verified through experiments.

• Journal of Sensor Science and Technology
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• v.21 no.5
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• pp.385-388
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• 2012

This paper describes the synthesis and characterization of graphene by RTA process. Amorphous 3C-SiC were deposited using APCVD for carbon source and Ni layer were employed for transition layer. Various parameters of the ramping speed, the annealing time and the cooling speed are evaluated for the optimized combination allowed for the reproducible fabrication of graphene using 3C-SiC thin film. For analysis of crystalline Raman spectra was employed. Transferred graphene shows a high IG/ID ratio of 2.73. SEM and TEM images show the optical transparency and 6 carbon network, respectively. Au electrode deposited on the transferred graphene shows linear I-V curve and its resistance is 358 ${\Omega}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.235-235
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• 2009

This paper describes the influence of a polycrystalline (poly) 3C-SiC buffer layer on the surface acoustic wave (SAW) properties of poly aluminum nitride (AlN) thin films by comparing the center frequency, insertion loss, the electromechanical coupling coefficient ($k^2$), andthetemperaturecoefficientoffrequency(TCF) of an IDT/AlN/3C-SiC structure with those of an IDT/AlN/Si structure, The poly-AlN thin films with an (0002)-preferred orientation were deposited on a silicon (Si) substrate using a pulsed reactive magnetron sputtering system. Results show that the insertion loss (21.92 dB) and TCF (-18 ppm/$^{\circ}C$) of the IDT/AlN/3C-SiC structure were improved by a closely matched coefficient of thermal expansion (CTE) and small lattice mismatch (1 %) between the AlN and 3C-SiC. However, a drawback is that the $k^2(0.79%)$ and SAW velocity(5020m/s) of the AlN/3C-SiC SAW device were reduced by appearing in some non-(0002)AlN planes such as the (10 $\bar{1}$ 2) and (10 $\bar{1}$ 3) AlN planes in the AlN/SiC film. Although disadvantages were shown to exist, the use of the AlN/3C-SiC structure for SAW applications at high temperatures is possible. The characteristics of the AlN thin films were also evaluated using FT-IR spectra, XRD, and AFM images.

• Proceedings of the KIPE Conference
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• 2014.07a
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• pp.411-412
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• 2014

In this paper, the switching losses and performances of Silicon Carbide(SiC) and Silicon based on the MOSFETs have been compared. To do this experiment, the buck converter using both SiC and Si devices have been built and tested. As a result, it has been confirmed that the converter with SiC devices shows better efficiency and performance compared with the converter using Si devices.

• Journal of the Korean Ceramic Society
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• v.47 no.6
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• pp.491-497
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• 2010

In this paper, we employed the classical molecular dynamics simulations using Tersoff's potential to calculate the elastic constants of the silicon carbide (SiC) crystal at high temperature. The elastic constants of the SiC crystal were calculated based on the stress-strain characteristics, which were drawn by the simulation using LAMMPS software. At the same time, the elastic constants of the SiC ceramics were measured at different temperatures by impulse excitation testing (IET) method. Based on the simulated stress-strain results, the SiC crystal showed the elastic deformation characteristics at the low temperature region, while a slight plastic deformation behavior was observed at high strain over $1,000^{\circ}C$ temperature. The elastic constants of the SiC crystal were changed from about 475 GPa to 425 GPa by increasing the temperature from RT to $1,250^{\circ}C$. When compared to the experimental values of the SiC ceramics, the simulation results, which are unable to obtain by experiments, are found to be very useful to predict the stress-strain behaviors and the elastic constant of the ceramics at high temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.8
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• pp.651-654
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• 2010

This paper describes the thermal and mechanical properties of doped thin film 3C-SiC and porous 3C-SiC. In this work, the in-situ doped thin film 3C-SiC was deposited by using atmospheric pressure chemical vapor deposition (APCVD) method at $120^{\circ}C$ using single-precursor hexamethyildisilane: $Si_2(CH_3)_6$ (HMDS) as Si and C precursors. 0~40 sccm $N_2$ gas was used as doping source. After growing of doped thin film 3C-SiC, porous structure was achieved by anodization process with 380 nm UV-LED. Anodization time and current density were fixed at 60 sec and 7.1 mA/$cm^2$, respectively. The thermal and mechanical properties of the $N_2$ doped porous 3C-SiC was measured by temperature coefficient of resistance (TCR) and nano-indentation, respectively. In the case of 0 sccm, the variations of TCR of thin film and porous 3C-SiC are similar, but TCR conversely changed with increase of $N_2$ flow rate. Maximum young's modulus and hardness of porous 3C-SiC films were measured to be 276 GPa and 32 Gpa at 0 sccm $N_2$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.387-390
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• 2002

SiC direct bonding technology is very attractive for both SiCOI(SiC-on-insulator) electric devices and SiC-MEMS(micro electro mechanical system) fields because of its application possibility in harsh environments. This paper presents pre-bonding techniques with variation of HF pre-treatment conditions for 2 inch SiC wafer direct bonding using PECVD(plasma enhanced chemical vapor deposition) oxide. The PECVD oxide was characterized by XPS(X-ray photoelectron spectrometer) and AFM(atomic force microscopy). The characteristics of the bonded sample were measured under different bonding conditions of HF concentration and an applied pressure. The bonding strength was evaluated by the tensile strength method. The bonded interface was analyzed by using IR camera and SEM(scanning electron microscope). Components existed in the interlayer were analyzed by using FT-IR(fourier transform infrared spectroscopy). The bonding strength was varied with HF pre-treatment conditions before the pre-bonding in the range of $5.3 kgf/cm^2$ to $15.5 kgf/cm^2$

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1514-1516
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• 1999

This paper covers our efforts to improve the low carrier mobility and light instability of hydrogenated amorphous silicon (a-Si:H) films with microcrystalline silicon $({\mu}c-Si)$ films. We successfully prepared ${\mu}c-Si$ films on $CaF_2$/glass substrate by decomposition of $SiH_4$ in RPCVD system. The $CaF_2$ films on glass served as a seed layer for ${\mu}c-Si$ film growth. The XRD analysis on $CaF_2$/glass illustrated a (111) preferred $CaF_2$ grains with the lattice mismatch less than 5 % of Si. We achieved ${\mu}c-Si$ films with a crystalline volume fraction of 61 %, (111) and (220) crystal orientations. grain size of $706\AA$, activation energy of 0.49 eV, and Photo/dark conductivity ratio of 124. By using a $CaF_2$/glass structure. we were able to achieve an improved ${\mu}c-Si$ films at a low substrate temperature of $300^{\circ}C$.