• 한국재료학회:학술대회논문집
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• 한국재료학회 2008년도 추계학술발표대회 및 제15회 신소재 심포지엄
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• pp.35.1-35.1
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• 2008

• Transactions on Electrical and Electronic Materials
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• 제10권4호
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• pp.131-134
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• 2009

The electrical properties and the microstructure of nitrogen-doped poly 3C-SiC films used for micro thermal sensors were studied according to different thicknesses. Poly 3C-SiC films were deposited by LPCVD (low pressure chemical vapor deposition) at $900^{\circ}C$ with a pressure of 4 torr using $SiH_2Cl_2$ (100%, 35 sccm) and $C_2H_2$ (5% in $H_2$, 180 sccm) as the Si and C precursors, and $NH_3$ (5% in $H_2$, 64 sccm) as the dopant source gas. The resistivity of the poly SiC films with a 1,530 ${\AA}$ thickness was 32.7 ${\Omega}-cm$ and decreased to 0.0129 ${\Omega}-cm$ at 16,963 ${\AA}$. The measurement of the resistance variations at different thicknesses were carried out within the $25^{\circ}C$ to $350^{\circ}C$ temperature range. While the size of the resistance variation decreased when the films thickness increased, the linearity of the resistance variation improved. Micro heaters and RTD sensors were fabricated on a $Si_3N_4$ membrane by using poly 3C-SiC with a 1um thickness using a surface MEMS process. The heating temperature of the SiC micro heater, fabricated on 250 ${\mu}m$${\times}$250 ${\mu}m$ $Si_3N_4$ membrane was $410^{\circ}C$ at an 80 mW input power. These 3C-SiC heaters and RTD sensors, fabricated by surface MEMS, have a low power consumption and deliver a good long term stability for the various thermal sensors requiring thermal stability.

• 센서학회지
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• 제18권5호
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• pp.349-352
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• 2009

This paper describes the fabrication and characteristics of micro heaters built on AlN($0.1{\mu}m$)/3C-SiC($1{\mu}m$) suspended membranes by surface micromachining technology. In this work, 3C-SiC and AlN films are used for high temperature environments. Pt thin film was used as micro heaters and temperature sensor materials. The resistance of temperature sensor and the power consumption of micro heaters were measured and calculated. The heater is designed for operating temperature up to about $800^{\circ}C$ and can be operated at about $500^{\circ}C$ with a power of 312 mW. The thermal coefficient of the resistance(TCR) of fabricated Pt resistance of temperature detector(RTD)'s is 3174.64 ppm/$^{\circ}C$. A thermal distribution measured by IR thermovision is uniform on the membrane surface.

• 멤브레인
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• 제28권4호
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• pp.221-232
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• 2018

Poly(imide siloxane)(Si-PI)와 polyvinylpyrrolidone (PVP)를 혼합한 고분자를 사용하여 실리카가 함유된 탄소 분리막을 제조하였다. 고분자 혼합물의 열분해에 의해 제조 된 다공성 탄소 구조의 특성은 두 고분자의 미세 상 분리 거동과 관련이 있다. Si-PI와 PVP의 고분자 혼합물의 유리 전이 온도(Tg)는 시차 주사 열량계를 사용하여 단일 Tg로 관찰되었다. 또한 $C-SiO_2$ 막의 질소 흡착 등온선을 조사하여 다공성 탄소 구조의 특성을 규명했다. Si-PI/PVP로부터 유도 된 $C-SiO_2$ 막은 IV형 등온선을 나타내었고 중간기공의 탄소 구조와 관련된 히스테리시스 루프를 가지고 있었다. 분자 여과 확인을 위해서, Si-PI/PVP의 비율과 열분해 온도 및 등온 시간과 같은 열분해 조건을 다르게 하여 $C-SiO_2$ 막을 제조하였다. 결과적으로, 120분 간의 등온 시간 동안 $550^{\circ}C$에서 Si-PI/PVP의 열분해에 의해 제조된 $C-SiO_2$ 막의 투과도는 820 Barrer ($1{\times}10^{-10}cm^3(STP)cm/cm^2{\cdot}s{\cdot}cmHg$)이었으며, $O_2/N_2$ 선택도는 14이었다.

• Korean Membrane Journal
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• 제6권1호
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• pp.16-23
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• 2004

The silica containing carbon (C-SiO$_2$) membranes were fabricated using poly(imide siloxane) (PIS) having -CO- swivel group. The characteristics of porous C-SiO$_2$ structures prepared by the pyrolysis of poly(imide siloxane) were related with the micro-phase separation between the imide block and the siloxane block. Furthermore, the nitrogen adsorption isotherms of the CMS and the C-SiO$_2$ membranes were investigated to define the characteristics of porous structures. The C-SiO$_2$ membranes derived from PIS showed the type IV isotherm and possessed the hysteresis loop, which was associated with the mesoporous carbon structures, while the CMS membranes derived from PI showed the type I isotherm. For the molecular sieving probe, the C-SiO$_2$ membranes pyrolyzed at 550, 600, and 700$^{\circ}C$ showed the O$_2$ permeability of 924, 1076, and 367 Barrer (1 ${\times}$ 10$\^$-10/㎤(STP)cm/$\textrm{cm}^2$$.$s$.$cmHg) and O$_2$/N$_2$ selectivity of 9, 8, and 12.

• ETRI Journal
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• 제34권2호
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• pp.226-234
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• 2012

The novelty of this study resides in the fabrication of stoichiometric and stress-reduced $Si_3N_4/SiO_2/Si_3N_4$ triple-layer membrane sieves. The membrane sieves were designed to be very flat and thin, mechanically stress-reduced, and stable in their electrical and chemical properties. All insulating materials are deposited stoichiometrically by a low-pressure chemical vapor deposition system. The membranes with a thickness of 0.4 ${\mu}m$ have pores with a diameter of about 1 ${\mu}m$. The device is fabricated on a 6" silicon wafer with the semiconductor processes. We utilized the membrane sieves for plasma separations from human whole blood. To enhance the separation ability of blood plasma, an agarose gel matrix was attached to the membrane sieves. We could separate about 1 ${\mu}L$ of blood plasma from 5 ${\mu}L$ of human whole blood. Our device can be used in the cell-based biosensors or analysis systems in analytical chemistry.

• 멤브레인
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• 제10권2호
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• pp.55-65
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• 2000

다공성 실리카 막을 졸겔법에 의해서 Si(${OC}_2H_5)_4-H_2O$ 로부터 제조하고, 막의 특성을 TG-DTA, XRD, IR, BET, SEN, TEM을 사용하여 조사하였다. 다공성 실리카 막 제조를 위한 Si(${OC}_2H_5)_4$ : $H_2O4$ : $H_2O$ : $C_2H_5{OH}$의 최적 몰비는 1 : 4.5 : 4 이었다. 100$^{\circ}C$~1100$^{\circ}C$~에서 열처리된 막의 비표면적은 3.8 $m^2$/g~902.3$m^2$/g 이었으며, 기공크기는 20$\AA$~50$\AA$이었다. 300$^{\circ}C$~~700$^{\circ}C$~범위에서 열처리된 막의 입자크기는 15nm~30nm이며, 열처리 온도가 증가하면 입자의 크기도 증가하였다. 이렇게 제조한 다공성 실리카 막으로 $H_2$/$N_2$ 혼합기체를 분리하는데 응용하였으며, 다공성 실리카 막에 의한 $H_2$/$N_2$혼합기체분리는 Knudsen flow와 surface flow에 의해서 일어나며 주로 surface flow에 의존하였다. 다공성 실리카 막의 $H_2$/$N_2$ 혼합기체에 대한 real separation factor($\alpha$)는 155.15 cmHg($\Delta$P)와 $25^{\circ}C$에서 5.17이었으며, real separation factor($\alpha$), head separation factor ($\beta$), tail separation factor$\bar{B}$)는 압력이 증가하면 증가하였다.

• Membrane and Water Treatment
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• 제10권5호
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• pp.353-360
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• 2019

ZSM-5 membrane was prepared on tubular macroporous ${\alpha}$-alumina support using a different synthesis route. The effects of organic template agent and Si/Al ratio of the synthesis gel on morphology, structure, and separation performance of the ZSM-5 membrane used for dehydration of isopropanol were investigated. High water perm-selectivity ZSM-5 membrane with a thickness of about $3.0{\mu}m$ and a low Si/Al ratio of 10.1 was successfully prepared from organotemplate-free synthesis gel with a molar composition of $SiO_2$ : $0.050Al_2O_3$ : $0.21Na_2O$ : NaF : $51.6H_2O$ at $175^{\circ}C$ for 24 h. The ZSM-5 membrane exhibited high pervaporation performance with a flux of $3.92kg/(m^2{\cdot}h)$ and corresponding separation factor of higher than 10,000 for dehydration of 90 wt.% isopropanol/water mixture at $75^{\circ}C$.

• 멤브레인
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• 제20권3호
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• pp.210-216
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• 2010

IS (요오드-황)프로세스의 HI 분해반응 공정에서의 적용을 목적으로 지르코니아 코팅 지지체를 이용하여 CVD법에 의해 수소분리막을 제작하였으며, 분리막으로서의 가능성을 평가하였다. 제작한 막의 형상 및 Si의 분포를 파악하기 위해 SEM 및 EPMA를 이용하여 분석하였다. 지르코니아를 코팅한 지지체를 이용하여 제작한 막에 Zr-Si-O층이 존재한다는 것을 알 수 있었다. 제작한 막의 수소와 질소가스의 단일 성분 투과속도를 $300{\sim}600^{\circ}C$에서 측정하였다. $600^{\circ}C$에서 Z-1막에서의 수소투과속도는 $1{\times}10^{-7}\;mol{\cdot}Pa^{-1}{\cdot}m^{-2}{\cdot}s^{-1}$를 나타냈다. 질소에 대한 수소의 선택성은 Z-1 막에서 5.0, Z-2막에서 5.75를 나타냈다.

• 한국세라믹학회지
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• 제36권10호
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• pp.1040-1047
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• 1999

After alumina sol was prepared by Yoldas process supported membranes were fabricated by adding ce and Re solution and SiO2 sol into alumina sol. The particle size of alumina sol was 11 nm and it was monodispersed transparent and stable for long time. The pore size of un-doped membrane started to increase to about 7,5nm at 1000$^{\circ}C$ and it was grown to twice (about 15nm) at 1100$^{\circ}C$ However the pore size of doped alumina was uniform to 1100$^{\circ}C$. The effect of retardation of grain growth was superior in SiO2 addition to that of Ce and Ru Because SiO2 doped samples transformed to needed-like phase and densified at 1200$^{\circ}C$ their application in membranes was limited. Ce and Ru doped sample showed vermicular structure identical to the un-doped ones at 1200$^{\circ}C$ But the particle size was smaller than that of un-doped ones.