• 제목/요약/키워드: SiC (Silicon Carbide)

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카올린의 환원 열탄화법에 의한 베타 탄화규소 휘스커의 합성 (Synthesis of $\beta$-SiC Whiskers by the Carbothermal Reduction of Kaolin)

  • 오세정;류종화;조원승;최상욱
    • 한국세라믹학회지
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    • 제35권12호
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    • pp.1249-1256
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    • 1998
  • ${\beta}$-Silicon carbide(${\beta}$-SiC) whiskers could be synthesized by the carbothermal reduction of kaolin at tem-peratures between 1400 and 1500$^{\circ}C$. The whiskers were grown up to about 1150 of aspect ratio by VS mechanism (showing tapering tips) and to about 45 of that by VLS mechanism (showing round droplet tips) respectively. Hydrocarbon like methane in the reaction atmosphere promoted the formation of gaseous il-icon monoxide(SiO) from silicon dioxide(SiO2) and subsequently reacted with it to form whiskers. The for-mation of ${\beta}$-SiC whiskers increased with increasing carbon content(to 30 wt%) and reaction temperatures. The max. yield of ${\beta}$-SiC whiskers was 15% at 1500$^{\circ}C$ under 20%CH4/80%H2.

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출발 SiC 입자 크기가 Si3N4-Bonded SiC 세라믹스의 질화율과 강도에 미치는 영향 (Effect of Starting SiC Particle Size on Nitridation and Strength of Silicon Nitride-Bonded Silicon Carbide Ceramics)

  • 최영훈;김영욱;우상국;한인섭
    • 한국세라믹학회지
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    • 제47권2호
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    • pp.157-162
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    • 2010
  • Effect of starting SiC particle size on nitridation rate and flexural strength of $Si_3N_4$-bonded-SiC (SNBSC) ceramics was investigated by using SiC particles of different size (${\sim}200\;{\mu}m$, ${\sim}100\;{\mu}m$ and ${\sim}45\;{\mu}m$). The specimen prepared from smaller SiC particles resulted in higher nitridation rate after nitridation at $1450^{\circ}C$, owing to the lower packing density in green body. The flexural strength showed maxima after 1-h nitridation for all specimens and then decreased with prolonged nitridation because of local densification-induced pore coarsening. The specimen prepared from smaller SiC particles showed better flexural strength because of smaller pore size and partly higher nitridation rate in the specimen. A maximal flexural strength of 29 MPa was obtained in the specimen with a density of $2.04\;g{\cdot}cm^3$, which was prepared from $45\;{\mu}m$-SiC particles.

C/SiC 복합재료 제조시 Pulse-CVI에서 증착변수의 영향 연구 (Studies on Effects of Deposition Parameters in Manufacturing of C/Sic composites by Pulse-CVI)

  • 김용탁;김영준;정귀영
    • 한국복합재료학회:학술대회논문집
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    • 한국복합재료학회 2001년도 추계학술발표대회 논문집
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    • pp.141-143
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    • 2001
  • Ceramic fiber-reinforced composites have good mechanical properties in hardness and durability. In this study, we studied the formation of SiC/C composites from methyltrichlorosilane and hydrogen by the Pulse-chemical vapor infiltration(PCVI) to deposit silicon carbide around the changes of the amount of deposit. SiC/C composites formed at $950^{\circ}C$, 20torr, Pulse-times (5s/60s). SEM of the cross sectional area of semple showed deposited silicon carbide around fibers.

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다결정 실리콘 카바이드를 이용한 마이크로 유량센서 (Micro flow sensor using polycrystalline silicon carbide)

  • 이지공;;이성필
    • 센서학회지
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    • 제18권2호
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    • pp.147-153
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    • 2009
  • A thermal flow sensor has been fabricated and characterized, consisting of a center resistive heater surrounded by two upstream and one downstream temperature sensing resistors. The heater and temperature sensing resistors are fabricated from nitrogen-doped(n-type) polycrystalline silicon carbide(poly-SiC) deposited by LPCVD(low pressure chemical vapor deposition) on LPCVD silicon nitride films on a Si substrate. Cavities were etched into the Si substrate from the front side to create suspended silicon nitride membranes carrying the poly-SiC elements. One upstream sensor is located $50{\mu}m$ from the heater and has a sensitivity of $0.73{\Omega}$/sccm with ${\sim}15\;ms$ rise time in a dynamic range of 1000 sccm. N-type poly-SiC has a linear negative temperature coefficient and a TCR(temperature coefficient of resistance) of $-1.24{\times}10^{-3}/^{\circ}C$ from room temperature to $100^{\circ}C$.

Evaluation of the Influence of Pyrolysis Temperature on the Electrical Heating Properties of Si-O-C Fiber

  • Sanghun Kim;Seong-Gun Bae;Bum-Mo Koo;Dong-Geun Shin;Yeong-Geun Jeong
    • Composites Research
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    • 제37권4호
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    • pp.330-336
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    • 2024
  • Silicon carbide (SiC) fibers exhibit excellent heat and chemical resistance at high temperatures. In this study, polycarbosilane melt spinning, oxidation curing, and pyrolysis were performed to fabricate amorphous SiC fibers, and their resistance heating characteristics were evaluated. A stick-type amorphous silicon carbide fiber heating element was manufactured, and the resistance was measured using the two-point probe method. The structural, electrical, and heating characteristics were evaluated at different pyrolysis temperatures. The fiber produced at 1300℃ displayed the highest conductivity and the maximum heating compared to the fibers produced at 1200℃ and 1400℃. This may be attributed to difference in the structures of the fibers, particularly the SiC and graphitic carbon structures.

입자 핵연료의 SiC/C 다층 도포층의 미세조직 및 극미세 경도 평가 (Microstructure and Nano-hardness of SiC/C Multi-coated Layers on a Particulate Nuclear Fuel)

  • 최용
    • 한국표면공학회지
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    • 제52권6호
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    • pp.321-325
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    • 2019
  • Triso-type coating layers of silicon carbide and graphite on UO2 paticulate nuclear fuel were prepared by using fluidized bed type chemical vapor deposition and self-propagating high temperature synthesis methods to make a coated nuclear fuel of a power plant for hydrogen mass-production. The source and carrier gases were the mixture of methyltrichlorosilane and propane, and inert argon. Chemical analysis and microstructure observation showed that the coated layers were inner graphite, middle silicon carbide and outer graphite. The elastic modulus and nano-hardness of the silicon carbide layer were 503 [GPa] and 36 [GPa], respectively.

기공형성제 함량이 다공질 Mullite-Bonded SiC 세라믹스의 미세구조와 강도에 미치는 영향 (Effect of Template Content on Microstructure and Flexural Strength of Porous Mullite-Bonded Silicon Carbide Ceramics)

  • 최영훈;김영욱;우상국;한인섭
    • 한국세라믹학회지
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    • 제47권6호
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    • pp.509-514
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    • 2010
  • Porous mullite-bonded SiC (MBSC) ceramics were fabricated at temperatures ranging from 1400 to $1500^{\circ}C$ for 2 h using silicon carbide (SiC), alumina ($Al_2O_3$), strontium oxide (SrO), and poly (methyl methacrylate-coethylene glycol dimethacrylate) (PMMA) microbeads. The effect of template content on porosity, pore morphology, and flexural strength were investigated. The porosity increased with increasing the template content at the same sintering temperature. The flexural strength showed maximum after sintering at $1450^{\circ}C$/2 h for all specimens due to small pores and dense strut. By controlling the template content and sintering temperature, it was possible to produce porous MBSC ceramics with porosities ranging from 30% to 54%. A maximum flexural strength of ~51MPa was obtained at 30% porosity when no template were used and specimens sintered at $1450^{\circ}C$/2 h.

알루미늄 첨가가 다공질 Self-Bonded SiC 세라믹스의 기공률과 꺾임강도에 미치는 영향 (Effect of Aluminum Addition on Porosity and Flexural Strength of Porous Self-Bonded Silicon Carbide Ceramics)

  • 임광영;김영욱;우상국;한인섭
    • 한국세라믹학회지
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    • 제46권5호
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    • pp.520-524
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    • 2009
  • Porous self-bonded silicon carbide (SBSC) ceramics were fabricated at temperatures ranging from 1750 to $1850^{\circ}C$ using SiC, Si, C as starting materials and Al as an optional sintering additive. The effect of Al addition on the porosity and strength of the porous SBSC ceramics were investigated as functions of sintering temperature and Si:C ratio. The porosity increased with decreasing the Si:C ratio and increasing the sintering temperature. It was possible to fabricate SBSC ceramics with porosities ranging from 37% to 44% by adjusting the Si:C ratio and the sintering temperature. Addition of Al additive promoted densification and necking between SiC grains, resulting in improved strength. Typical flexural strengths of SBSC ceramics with and without Al addition were 44 MPa and 34MPa, respectively.

Si(CH3)4로부터 SiC의 레이저 화학증착에 관한 연구 (Study of Laser Chemical Vapor Deposition of Silicon Carbide from Tetramethylsilane)

  • 이영림
    • 대한기계학회논문집B
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    • 제26권9호
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    • pp.1226-1233
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    • 2002
  • The purpose of the present study was to examine some basic aspects of laser chemical vapor deposition that will be ultimately utilized for solid freeform fabrication of three dimensional objects. Specifically, deposition of silicon carbide (SiC) using tetramethylsilane (TMS) as precursor was studied for a rod grown by $CO_2$laser-assisted chemical vapor deposition. First, temperature distribution for substrate was analyzed to select proper substrate where temperature was high enough for SiC to be deposited. Then, calculations of chemical equilibrium and heat and mass flow with chemical reactions were performed to predict deposition rates, deposit profiles, and deposit components. Finally, several rods were experimentally grown with varying chamber pressure and compared with the theoretical results.

Processing of Silica-Bonded Silicon Carbide Ceramics

  • Chun, Yong-Seong;Kim, Young-Wook
    • 한국세라믹학회지
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    • 제43권6호
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    • pp.327-332
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    • 2006
  • The effect of the processing parameters on the sintered density and strength of silica-bonded SiC (SBSC) ceramics was investigated for three types of batches with different particle sizes. The SBSC ceramics were fabricated by an oxidation-bonding process. The process involves the sintering of powder compacts in air so that the SiC particles bond to each other by oxidation-derived $SiO_2$ glass or cristobalite. A finding of this study was that a higher flexural strength was obtained when the starting powder was smaller. When a ${\sim}0.3_{-{\mu}m}$ SiC powder was used as a starting powder, a high strength of $257{\pm}42\;MPa$ was achieved at a relative density of ${\sim}80%$.