• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.127-130
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• 2001

Si thin films on p-type (100) Si substrate have been fabricated by pulsed laser deposition technique using a Nd:YAG laser. The pressure of the environmental gas during deposition was 1 Torr. After deposition, Si thin film has been annealed again at 400-840$^{\circ}C$ in nitrogen ambient. Strong blue photoluminescence (PL) have been observed at room temperature. We report the PL properties of Si thin films depending on the variation of the annealing temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.1
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• pp.75-78
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• 2002

Si thin films on p-type (100) Si substrate have been prepared by a pulsed laser deposition technique using a Nd:YAG laser. The pressure of the environmental gas during deposition was 1 Torr. After deposition, Si thin film has been annealed again at 400-840$^{\circ}C$ in nitrogen ambient. Strong blue photoluminescence (PL) have been observed at room temperature. We report the PL properties of Si thin films with the variation of the annealing temperature.

• Bulletin of the Korean Chemical Society
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• v.25 no.4
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• pp.525-528
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• 2004

The photoluminescence (PL) emission of Si nanocrystals synthesized by 400 keV Si ion implanted in $SiO_2$ is studied as a function of ion dose and annealing time. The formation of nanocrystals at around 600 nm from the surface was confirmed by RBS and HRTEM, and the Si nanocrystals showed a wide and very intense PL emission at 700-900 nm. The intensity of this emission showed a typical behaviour with a fast transitory increase to reach a saturation with the annealing time, however, the red shift increased continuously because of the Ostwald ripening. The oversaturation of dose derived a decrease of PL intensity because of the diminishment of quantum confinement. A strong enhancement of PL intensity by H passivation was confirmed also, and the possible mechanism is discussed.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.489-490
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• 2008

As anodizing method using poly-Si (polycrystalline silicon) grown by LPCVD (Low Pressure Chemical Vapor Deposition), a ballistic electron emitter was made. An OPPS (Oxidized Porous Poly-Si) structure can generate ballistic electron which can pass through without scattering owing to electric field of oxide layer wrapped around nanocrystal due to applied voltage of between surface and bottom electrode. As electrode, (Al, Au and Pt/ti) were used. In this case, there were the better characteristics in Al and Pt/ti than in Al and Au.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.04a
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• pp.88-91
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• 2003

Si nanocrystallites thin films have been fabricated by pulsed laser deposition using a Nd:YAG laser. After deposition, samples were annealed at the temperature range of 400 to $800^{\circ}C$. Hydrogen passivation was then performed in the forming gas ($95%N_{2}+5%H_{2}$) at $500^{\circ}C$. Strong violet-indigo photoluminescence has been observed at room temperature on nitrogen ambient-annealed Si nanocrystallites. As a result of photoluminescence spectra and infrared absorption spectra, we conclude that the violet-indigo PL efficiency is related with oxygen vacancy in the $SiO_x$(x= 1.6-1.8) matrix.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.1900-1902
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• 2005

본 연구에서는 scanning probe microscopy(SPM)을 이용하여 국소영역에서 silicon nanocrystal(Si NC)의 전기적 특성을 분석하였다. Si NCs은 압축된 silicon powder를 laser로 분해하는 laser ablation 방식으로 제조되었고, sharpening oxidation 과정을 통하여 Si NC 주변에 oxide shell을 형성시켰다. 이 과정에서 Si NCs은 $10{\sim}50 nm$의 크기와 약 $10^{11}/cm^2$의 밀도로 $SiO_2$층에 증착되었다. SPM의 conducting tip을 통하여 전하는 각각의 Si NC로 주입되게 되고, 이로 인하여 발생하는 SCM image와 dC/dV curve의 변화를 통하여 Si NC에서 전하 거동을 모니터 하였다. 또한 국소영역에서 Si NC의 전기적 특성을 MOS capacitor 구조에서의 C-V 특성과 비교 분석하였다.

• Korean Journal of Materials Research
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• v.17 no.4
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• pp.222-226
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• 2007

[ $SiO_2$ ]thin films containing Si-nanocrystals and $Er^{3+}$ were fabricated by the RF-sputtering method. Intense emission of $Er^{3+}$ was observed at 1530 nm region after the annealing of the film at $1050^{circ}C$ for 5 min. Channel waveguides were fabricated using such films for the core. The films containing Si higher than 2.4 at% exhibited the change in stress from compression to tension after annealing, which induced the fatal loss-increase in waveguide. The optical gain might be attained by the Er-doped waveguide with Si lower than 2.4 at% by a visible-light-excitation.

• Proceedings of the Optical Society of Korea Conference
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• 2002.07a
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• pp.38-39
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• 2002

Optical telecommunication has been growing at a rate that exceeds even the "Moore′s Law". However, while the electronic revolution has allowed everyone to have his/her own PC, the optical revolution is still confined to the long-haul network such that the individual end users are still connected to an electronic metro/access networks. However, given the rapid increase in the data traffic (e.g., multimedia), the optical edge that separates the individual end users from optical networks will eventually have to include the metro/acces networks. (omitted)

• Transactions on Electrical and Electronic Materials
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• v.12 no.5
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• pp.218-221
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• 2011

We modified the optical properties of the $CuInS_2$ nanocrystal (NC) by alloying. Nanocrystals (NCs) with alloyed cores were synthesized by refluxing the as-synthesized $CuInS_2$ NCs with a mixture of cadmium acetate, zinc acetate and palmitic acid. The shift in emission wavelength of the NCs after shell layer formation was minimized by alloying. The photoluminescence (PL) spectra showed significant reduction of emission intensity. A detailed study on the emission process of NCs implies that the formation of shell layers with small lattice mismatch minimized the mismatch strain generated from the shell layers in contrast to core alloyed NCs. In particular, time-resolved PL spectra of the NCs showed a significant increase in the lifetime of excited carriers by modifying the band alignment of the NCs by modifying the shell composition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1033-1036
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• 2004

Si nanocrystallites thin films on p-type (100) Si substrate have been fabricated by pulsed laser deposition using a Nd:YAG laser. After deposition, samples were annealed at the temperatures of 400 to $800^{\circ}C$. Hydrogen passivation was then performed in the forming gas (95% $N_2$ + 5% $H_2$) for 1 hr. Strong violet-indigo photoluminescence has been observed at room temperature from nitrogen ambient-annealed Si nanocrystallites. The variation of photoluminescence (PL) Properties of Si nanocrystallites thin films has been investigated depending on annealing temperatures with hydrogen passivation. From the results of PL, Fourier transform infrared (FTIR), and high-resolution transmission electron microscopy (HRTEM) measurements, it is observed that the origin of violet-indigo PL from the nanocrystalline silicon in the silicon oxide film is related to the quantum size effect of Si nanocrystallites and oxygen vacancies in the SiOx(x : 1.6-1.8) matrix affects the emission intensity.