Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Effect of Annealing Temperature on the Luminescence of Si Nanocrystallites Thin Films Prepared by Pulsed Laser Deposition

펄스 레이저 증착법으로 성장된 실리콘 박막의 어닐링 온도 변화에 따른 발광 특성연구

  • 김종훈 (연세대학교 전기전자공학과) ;
  • 전경아 (연세대학교 전기전자공학과) ;
  • 이상렬 (연세대학교 전기전자공학과)
  • Published : 2002.01.01
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Abstract

Si thin films on p-type (100) Si substrate have been prepared by a pulsed laser deposition technique using a Nd:YAG laser. The pressure of the environmental gas during deposition was 1 Torr. After deposition, Si thin film has been annealed again at 400-840$^{\circ}C$ in nitrogen ambient. Strong blue photoluminescence (PL) have been observed at room temperature. We report the PL properties of Si thin films with the variation of the annealing temperature.

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References

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