• Proceedings of the Korean Society for Technology of Plasticity Conference
• /
• 2003.10a
• /
• pp.377-380
• /
• 2003

Recently, demand of digital products with optoelectronic device is increasing rapidly. A microlens array is applied to improve optical efficiency on optoelectronic device, and it is usually fabricated by photolithography and reflow process after planarization layer coating process. UV molding process is more suitable for mass production of high quality microlens array than photolithography and reflow process. In the present study, microlens array was fabricated on the simulated optoelectronic device with planarization layer by aligned UV molding process. The shape of replicated microlens was measured, and the section image of molded part was examined.

• Journal of the Korean Vacuum Society
• /
• v.21 no.3
• /
• pp.136-141
• /
• 2012

We report investigation of structural and optical characteristics of $In_2Se_3$ thin films fabricated by thermal annealing process. Indium (In) is deposited on substrates by sputtering methods and $In_2Se_3$ thin films are fabricated by thermal annealing it with selenium vapor. The annealing temperature was changed from $150^{\circ}C$ to $400^{\circ}C$. We observe formation and phase changes of $In_2Se_3$ thin films with increase of annealing temperature. Conglomeration of In is observed at low annealing temperature (${\leq}150^{\circ}C$). $In_2Se_3$ phases are started to form at $200^{\circ}C$ and ${\gamma}-In_2Se_3$ phase form at $350^{\circ}C$. High-quality ${\gamma}-In_2Se_3$ thin film with wurtzite structure is obtained at $400^{\circ}C$ of annealing temperature. Furthermore, we confirm that band gaps of $In_2Se_3$ thin films are increased according to increase of annealing temperature. Optical band gap of high-quality ${\gamma}-In_2Se_3$ is found to be 1.796eV.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.440-440
• /
• 2011

We report on the non-volatile memory characteristics of a bistable organic memory (BOM) device with Au nanoparticles (NPs) embedded in a conducting poly N-vinylcarbazole (PVK) colloids hybrid layer deposited on flexible polyethylene terephthalate (PET) substrates. Transmission electron microscopy (TEM) images show the Au nanoparticles distributed isotropically around the surface of a PVK colloid. The average induced charge on Au nanoparticles, estimated using the C-V hysteresis curve, was large, as much as 5 holes/NP at a sweeping voltage of ${\pm}3$ V. The maximum ON/OFF ratio of the current bistability in the BOM devices was as large as $1{\times}105$. The cycling endurance tests of the ON/OFF switching exhibited a high endurance of above $1.5{\times}105$ cycles and a high ON/OFF ratio of ~105 could be achieved consistently even after quite a long retention time of more than $1{\times}106$ s.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2006.08a
• /
• pp.27-32
• /
• 2006

The present status and prospects for further development of thin-film electroluminescent (TFEL) devices using oxide phosphors are described. High-luminance oxide TFEL devices have been recently developed using a new combinatorial deposition technique featuring rf magnetron sputtering with a subdivided powder target. In addition, new flexible oxide TFEL devices have been fabricated on an oxide ceramic sheet and operated stably in air above $200^{\circ}C$.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2006.08a
• /
• pp.1591-1594
• /
• 2006

In this work, we fabricated efficient white organic light emitting device (WOLED) by the stack of complementary fluorescent dye-doped layers, Effect of dye-doping ratio and thickness of each layers on WOLED efficiency and emission spectrum was investigated. Moreover, out-coupling efficiency enhancement using microlens array was analyzed for bottom and top-emitting device architecture, leading to higher light extraction properties.

• Proceedings of the Korean Information Science Society Conference
• /
• 2000.04a
• /
• pp.36-38
• /
• 2000

An optoelectronic database filter chip for high performance database computers and applications is proposed. The proposed device is designed to perform the selection and projection operations of relational database operation on-the-fly in page-parallel manner to increase the overall performance of a database system. The device utilizes CMOS smart pixel array consists of detector and combinational logic circuit to perform the selection and projection operation.

• Korean Journal of Materials Research
• /
• v.9 no.6
• /
• pp.599-603
• /
• 1999

We have investigated the growth characteristics of thick GaN on Sim substrate with AlN and low temperature GaN buffer layer. The vertical hydride vapor phase epitaxy system with $GaCl_3$ precursor was used for growth of GaN. AlN and GaN buffer layer were deposited on Si substrate to reduce the lattice mismatch and the thermal expansion coefficient mismatch between si and GaN. Optimization of deposition condition for AlN and low temperature GaN buffer layers were carried out. We studied the effects of growth temperature, V/III ratio on the properties of thick GaN. Surface morphology, growth rate and crystallinity of thick GaN were measured using Atomic Force Microscopy (AFM), $\alpha-step$-, Scanning Electron Microscopy (SEM) and X-Ray Diffractometer(XRD).

• Electrical & Electronic Materials
• /
• v.7 no.6
• /
• pp.549-556
• /
• 1994

광전변화소자(Photo electric conversion device)는 광전효과-내부 광전효과(광도전 및 광기전력) 및 외부광전효과(광전자방출)을 이용하여 광을 전기신호로 변화시키는 소자를 광전자소자라 하며, 광전자 및 양자전자공학의 발전과 함께 많은 개발이 되고 있다. 이 광전변환소자는 주로서 고체박막의 재료를 이용하며, 소자의 소형화, 고성능화, 고신뢰성등의 요구와 함께 광전기술연구가 활발하게 진행되고 있다. 현재 광전소자의 광의 파장은 가시부만이 아니고, X선으로 부터 적외선까지에 걸쳐 있다. 이 파장에 대응하여 각종의 단결정이 필요하고, 소자의 설계가 요구된다. 이들의 응용은 소자의 광의 발진, 증폭, 검출의 소자만이 아니고 변조, 편향, 기록, 전달로등 다종다양의 기능을 갖는 소자가 요구되고 있다. 이들의 Optoelectronic Device의 연구가 활발하게 진행되어 새로운 광전소자의 제품이 개발되고 있어, 이에 대한 소개를 하고져 한다.

• Journal of Sensor Science and Technology
• /
• v.18 no.2
• /
• pp.154-159
• /
• 2009

This paper describes two methods - stamp-to-stick bonding and microtransfer molding - to integrate microfluidic channel into an optoelectrofluidic device for in-channel microparticle manipulation. We have demonstrated the optoelectronic microparticle manipulation in the channel-integrated optoelectrofluidic device using a liquid crystal display. As injecting a liquid sample containing $15{\mu}m$-diameter polystyrene particles into the fabricated channel, trapping and transport of individual microparticles have been successfully demonstrated. This channel-integrated optoelectrofluidic device may be useful for several in-channel applications based on the optoelectrofluidics such as optoelectronic flow control, droplet-based protein assay and bead-based immunoassay.

• Journal of Sensor Science and Technology
• /
• v.19 no.2
• /
• pp.160-167
• /
• 2010

In this paper, we fabricated the optoelectronic device based on Cadmium selenide(CdSe) nanocrystal quantum dots (NQDs)/single-walled carbon nanotubes(SWNTs) heterostructure using dieletrophoretic force. The efficient charge transfer phenomena from CdSe to SWNT make CdSe-Pyridine(py)-SWNT unique heterostructures for novel optoelectronic device. The conductivity of CdSe-py-SWNT was increased when it was exposed at ultra violet(UV) lamp, and varied as a function of wavelength of incident light.