Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
권호 표지
DOI QR코드

DOI QR Code

Fabrication and characterization of SiO2 based waveguide co-doped with Si-nanocrystal and Er3+

Si 나노 입자와 Er3+를 공첨가한 SiO2계 도파로의 제작과 평가

  • Choi, Se-Weon (Korea Institute of Industrial Technology, Gwangju) ;
  • Ko, Young-Ho (Korea Institute of Industrial Technology, Gwangju) ;
  • Chang, Se-Hun (Korea Institute of Industrial Technology, Gwangju) ;
  • Oh, Ik-Hyun (Korea Institute of Industrial Technology, Gwangju) ;
  • Kang, Chang-Seog (Korea Institute of Industrial Technology, Gwangju)
  • 최세원 (한국생산기술연구원 광주연구센터) ;
  • 고영호 (한국생산기술연구원 광주연구센터) ;
  • 장세훈 (한국생산기술연구원 광주연구센터) ;
  • 오익현 (한국생산기술연구원 광주연구센터) ;
  • 강창석 (한국생산기술연구원 광주연구센터)
  • Published : 2007.04.27
Download PDF
⟨ Previous Next ⟩

Abstract

[ $SiO_2$ ]thin films containing Si-nanocrystals and $Er^{3+}$ were fabricated by the RF-sputtering method. Intense emission of $Er^{3+}$ was observed at 1530 nm region after the annealing of the film at $1050^{circ}C$ for 5 min. Channel waveguides were fabricated using such films for the core. The films containing Si higher than 2.4 at% exhibited the change in stress from compression to tension after annealing, which induced the fatal loss-increase in waveguide. The optical gain might be attained by the Er-doped waveguide with Si lower than 2.4 at% by a visible-light-excitation.

Keywords

References

  1. P. G. Kit and A. Polman, J. Appl. Phys., 93(9), 5008-5012 (2003) https://doi.org/10.1063/1.1565697
  2. K. Imakita, M. Fujii, Y. Yamaguchi and S. Hayashi, Phys. Rev., B71 115440-115446 (2005) https://doi.org/10.1103/PhysRevB.71.115440
  3. G. Franzo, D. Pacifici, V. Vinciguerra, F. Priolo and F. Iacona, Appl. Phys. Lett., 76(16), 2167-2169 (2000) https://doi.org/10.1063/1.126286
  4. A. J. Kenyon, C. E. Chryssou, C. W. Pitt, T. Shimizu-Iwayama, D. E. Hole, N. Sharma and C. J. Humphreys, J. Appl. Phys., 91(1), 367-374 (2002) https://doi.org/10.1063/1.1419210
  5. P. G. Kik, M. L. Brongersma and A. Polman, Appl. Phys. Lett., 76(17) 2325-2327 (2000) https://doi.org/10.1063/1.126334
  6. Jinku Lee, Jung H. Shin and Namkyoo Park, J. Lightwave Tech., 23(1), 19-25 (2005) https://doi.org/10.1109/JLT.2004.840341
  7. J. Lee, J. H. Shin and N. Park, Proc. Of OFC2004, PDP 19 (2004)
  8. P. G. Kit and A. Polman, J. Appl. Phys., 91(1), 534-536 (2002) https://doi.org/10.1063/1.1418417
  9. M. Fujii, M. Yoshida, S. Hayashi and K. Yamamoto, J. Appl. Phys. 84(8), 4525-4531 (1998) https://doi.org/10.1063/1.368678
  10. P.G. Kik and A. Polman, J. Appl. Phys., 88(4), 1992-1998 (2000) https://doi.org/10.1063/1.1305930
  11. V. Vinciguerra, G. Franzo, F. Priolo, F. Iacona and C. Spinella, J. Appl. Phys., 87(11), 8165-8173 (2000) https://doi.org/10.1063/1.373513
  12. D. Navarro-Urrios, M. Melchiorri, N. Daldosso, L. Pavesi, C. Garcia. P. Pellegrino, B. Garrido, G. Pucker, F. Gourbilleau and R. Rizk, J. Luminescence, 121, 249-255 (2006) https://doi.org/10.1016/j.jlumin.2006.08.002
  13. A.A. Dakhel, Materials Chem. and Phys., 100, 366-371 (2006) https://doi.org/10.1016/j.matchemphys.2006.01.005
  14. J. Lee, J. Shin and N. Park, J. Lightwave Tech. 23(1), 19-25 (2005) https://doi.org/10.1109/JLT.2004.840341