• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.33-38
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• 2000

The ~1540 nm Er$^{3+}$ photoluminescence (PL) and photoluminescence excitation (PLE) spectra of Er-implanted Mg-codoped GaN (GaN:Er+Mg) exhibit that the excitation efficiency of a specific Er$^{3+}$ center among different Er$^{3+}$ centers existing in Er-implanted GaN is selectively enhanced, compared to Er-implanted undoped GaN (GaN:Er). In GaN:Er+Mg, the 1540 nm PL peaks characteristic of the so-called "violet-pumped" Er$^{3+}$ center and the ~2.8-3.4 eV (violet) PLE band are significantly strengthened by the Mg-doping. The intra-f absorption PLE bands associated with this "violet-pumped" center are also enhanced by this doping. The 1540 nm PL peaks originating from the violet-pumped center dominate the above-gap-excited Er$^{3+}$ PL spectrum of GaN:Er+Mg, whereas it was unobservable under above-gap excitation in GaN:Er. All of these results indicate that Mg doping increases the efficiency of trap-mediated excitation of Er$^{3+}$ emission in Er-implanted GaN.planted GaN.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.109-109
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• 2010

$Er^{3+}$ ion shows a stable and efficient luminescence at 1.54mm due to its $^4I_{13/2}\;{\rightarrow}\;^4I_{15/2}$ intra-4f transition. As this corresponds to the low-loss window of silica-based optical fibers, Er-based light sources have become a mainstay of the long-distance telecom. In most telecom applications, $Er^{3+}$ ions are excited via resonant optical pumping. However, if nanocluster-Si (nc-Si) are co-doped with $Er^{3+}$, $Er^{3+}$ can be excited via energy transfer from excited electrical carriers in the nc-Si as well. This combines the broad, strong absorption band of nc-Si with narrow, stable emission spectra of $Er^{3+}$ to allow top-pumping with off-resonant, low-cost broadband light sources as well as electrical pumping. A widely used method to achieve nc-Si sensitization of $Er^{3+}$ is high-temperature annealing of Er-doped, non-stoichiometric amorphous thin film with excess Si (e.g.,silicon-rich silicon oxide(SRSO)) to precipitate nc-Si and optically activate $Er^{3+}$ at the same time. Unfortunately, such precipitation and growth of nc-Si into Er-doped oxide matrix can lead to $Er^{3+}$ clustering away from nc-Si at anneal temperatures much lower than ${\sim}1000^{\circ}C$ that is necessary for full optical activation of $Er^{3+}$ in $SiO_2$. Recently, silicon-rich silicon nitride (SRSN) was reported to be a promising alternative to SRSO that can overcome this problem of Er clustering. But as nc-Si formation and optical activation $Er^{3+}$ remain linked in Er-doped SRSN, it is not clear which mechanism is responsible for the observed improvement. In this paper, we report on investigating the effect of separating the nc-Si formation and $Er^{3+}$ activation by using hetero-multilayers that consist of nm-thin SRSO or SRSN sensitizing layers with Er-doped $SiO_2$ or $Si_3N_4$ luminescing layers.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.3
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• pp.111-115
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• 2015

$Er^{3+}$ doped $Y_3Al_5O_{12}$ (Er:YAG) single crystals, in which the concentrations of $Er^{3+}$ ion were 5, 7.3, 8, and 10 at.%, were grown by the Czochralski method under nitrogen atmosphere. The <111> oriented Er:YAG single crystals with diameters of up to 50 mm were grown at a pulling rate of 1.0 mm/h and rotation rate of 10 rpm. The thick part of the core region was generated mainly when there was a diameter change during the crystal growth. The concentrations of $Er^{3+}$ ion in the crystals were the same as it was in the melt. $Er^{3+}$ concentration of core region was slightly higher than the other regions in the compositional analysis. The fluorescence lifetime was saturated according to the increase of $Er^{3+}$ doping concentrations.

• Korean Journal of Materials Research
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• v.25 no.9
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• pp.475-479
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• 2015

$YNbO_4:Yb^{3+}/Er^{3+}$ is synthesized using a solid-state reaction process with a LiCl flux. The effects of the Er/(Yb+Er) ratios ($R_{Er}$) on the up-conversion (UC) and down-conversion (DC) spectra are investigated. The XRD data confirm that the $Yb^{3+}$ and $Er^{3+}$ ions are fully substituted for the $Y^{3+}$ sites. The UC emission spectra activated by 980 nm consists of green and red emission bands, which originate from the $Er^{3+}$ ions through an energy transfer (ET) process from $Yb^{3+}$ to $Er^{3+}$. The UC emission intensity depends on the $R_{Er}$ value, and the findings demonstrate that $R_{Er}{\leq}0.14$ is suitable for an effective UC process. The DC emission spectra under 269 nm radiation of the synthesized powders exhibits not only a strong blue emission assigned to the $[NbO_4]^{3-}$ niobates, but also green peaks that originate from the $Er^{3+}$ ions through an ET process between $[NbO_4]^{3-}$ and $Er^{3+}$.

• Journal of Power System Engineering
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• v.16 no.6
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• pp.92-97
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• 2012

In this study, ER fluids were working fluid and yield shear stress of attained dispersive ER fluids made by analyzed to adapt effectively at the practical equipment like three port ER valve. In addition, movement of ER particle was observed by using a microscope the same as the strength of electric field with Bingham characteristic. Basis material was presented to develop 3 port ER-Valve by quantitatively comparing and analyzing entrance, load and outlet flow's differences of 3 port rectangular tubes. This study, after designing and producing the 3port ER-Valve, considered the characteristic of pressure drop, outlet and load flow rate by changing the strength of electric field on ER fluids flowing between electrodes.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.2
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• pp.89-96
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• 2003

Photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopy have been performed at 6 K on the 1540 nm $^4$I$\_$(13/2)/\longrightarrow$^4$I$\_$(15/2)/ emission of Er$\^$+3/ in in situ Er-doped GaN The PL and PLE spectra of in situ Er-doped GaN are compared with those of Er-implanted GaN in this study. The lineshapes of the broad PLE absorption bands and the broad PL bands in the spectra of the in situ Er-doped GaN are similar to those in Er-doped glass rather than in the Er-implanted GaN. The PL spectra of this in situ Er-doped GaN are independent of excitation wavelength and their features are significantly different from the site-selective PL spectra of the Er-implanted GaN. These PL and PLE studies reveal that a single type of Er$\^$3+/ sites is present in the in situ Er-doped GaN and these Er sites are different from those observed in the Er-implanted GaN. In addition, the comparison of the PL single strength illustrates that the excitation of Er$\^$3+/ sites through the energy absorption of defects in Er-implanted GaN.

• Applied Chemistry for Engineering
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• v.26 no.3
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• pp.319-325
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• 2015

Submicron-sized $CeO_2:Er^{3+}/Yb^{3+}$ upconversion phosphor particles were synthesized by spray pyrolysis, and their luminescent properties were characterized by changing the concentration of $Er^{3+}$ and $Yb^{3+}$. $CeO_2:Er^{3+}/Yb^{3+}$ showed an intense green and red emission due to the $^4S_{3/2}$ or $^2H_{11/2}{\rightarrow}^4I_{15/2}$ and $^4F_{9/2}{\rightarrow}^4I_{15/2}$ transition of $Er^{3+}$ ions, respectively. In terms of the emission intensity, the optimal concentrations of Er and Yb were 1.0 % and 2.0%, respectively, and the concentration quenching was found to occur via the dipole-dipole interaction. Upconversion mechanism was discussed by using the dependency of emission intensities on pumping powers and considering the dominant depletion processes of intermediate energy levels for the red and green emission with changing the $Er^{3+}$ concentration. An energy transfer from $Yb^{3+}$ to $Er^{3+}$ in $CeO_2$ host was mainly involved in ground-state absorption (GSA), and non-radiative relaxation from $^4I_{11/2}$ to $^4I_{13/2}$ of $Er^{3+}$ was accelerated by the $Yb^{3+}$ co-doping. As a result, the $Yb^{3+}$ co-doping led to greatly enhance the upconversion intensity with increasing ratios of the red to green emission. Finally, it is revealed that the upconversion emission is achieved by two photon processes in which the linear decay dominates the depletion of intermediate energy levels for green and red emissions for $CeO_2:Er^{3+}/Yb^{3+}$ phosphor.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.1
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• pp.27-30
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• 2002

ZnO co-doped Er:$LiNbO_3$ single crystal thin films have been grown on $LiNbO_3$ (001) substrate by liquid phase epitaxy (LPE) method. The melts of ZnO co-doped Er:$LiNbO_3$ was fixed $Er_2O_3$, concentration (1 mol%) and different ZnO concentrations 3 and 5 mol%. The crystallinity of ZnO co-doped Er :$LiNbO_3$ films became better than the $LiNbO_3$ substrate. At ZnO 5 mol% concentration, the surface of ZnO co-doped Er:$LiNbO_3$ film is affected by compressive stress along both the perpendicular and the parallel direction. Also the surface of ZnO 3 mol% co-doped Er:$LiNbO_3$film is smoother than the original $LiNbO_3$ substrate surface.

• Molecules and Cells
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• v.26 no.3
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• pp.285-290
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• 2008

Estrogen-induced proliferation in estrogen receptor (ER)-positive breast cancer cells is primarily mediated through two distinct intracellular receptors, $ER{\alpha}$ and $ER{\beta}$. Although tumor necrosis factor alpha ($TNF{\alpha}$) and $E2/ER{\alpha}$ are known to exert opposing effects on cell proliferation in MCF-7 cells, the mechanism by which $TNF{\alpha}$ antagonizes $E2/ER{\alpha}$-mediated cell proliferation is not well understood. The present study suggests that reduced cell survival in response to $TNF{\alpha}$ treatment in MCF-7 cells may be associated with the down-regulation of $ER{\alpha}$ protein. The decrease in $ER{\alpha}$ protein level was accompanied by an inhibition of $ER{\alpha}$ gene transcription. Cell viability was decreased synergistically by the combined treatment with $ER{\alpha}$-siRNA and $TNF{\alpha}$. Furthermore, pretreatment of cells with the PI3-kinase (PI3K)/ Akt inhibitor, LY294002, markedly enhanced $TNF{\alpha}$-induced down-regulation of the $ER{\alpha}$ protein, suggesting that the PI3K/Akt pathway might be involved in control of the $ER{\alpha}$ level. Moreover, down-regulation of $ER{\alpha}$ by $TNF{\alpha}$ was not inhibited in cells that were pretreated with the proteasome inhibitors, MG132 and MG152, which suggests that proteasome-dependent proteolysis does not significantly influence $TNF{\alpha}$-induced down-regulation of $ER{\alpha}$ protein. In contrast, the effect of the PI3K/Akt inhibitor on $ER{\alpha}$ was blocked in cells that were treated with LY294002 in the presence of the proteasome inhibitors. Collectively, our findings show that the $TNF{\alpha}$ may partly regulate the growth of MCF-7 breast cancer cells through the down-regulation of $ER{\alpha}$ expression, which is primarily mediated by a PI3K/Akt signaling.

• Tribology and Lubricants
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• v.13 no.3
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• pp.73-84
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• 1997

ER clutch is a device using ER fluid, so called "intelligent material" and is a controlled system with electric field strength. Currently, the temperature of ER fluid increases and affects the performance of ER clutch when ER clutch is operating. This study was undertaken to estimate this performance variation due to temperature rise of ER fluid. An analytic heat transfer model of concentric cylinder type ER clutch was developed and with this model, effects of changing geometric, kinetic parameters of ER clutch and ER fluid properties were described. In conclusion, compared with neglecting thermal effects, a performance of ER clutch was very differential and for uniform performance of ER clutch, we have to improve thermal stability of ER fluid. ER fluid.