• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.12
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• pp.1129-1132
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• 2005

The purpose of this reserch is to establish the new design technology for microwave Coplanar structure. The components in microwave circuit are classified to transmission devices, EM devices, and quasi-TEM devices. After design of these devices, we analyzed these CPWs electromagnetically using FDTD method, and suggested optimum CPW structure. In oder to realize a CPW module up to 30 GHz-100 GHz band, we research on a technology of 3-dimensional microwave CPW, and GaAs substrate with Si layer for ohmic loss. As a result this research, we suppressed the leakage, resonance, coupling, and radiation of CPW EMI, and improved resonance quality of CPW.

• Journal of Magnetics
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• v.6 no.4
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• pp.129-131
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• 2001

In order to investigate the effect of the interface on GMR, [NiFe(25 ${\AA}$)/Cu(24${\AA}$)]$_2$/Si thin film was epitaxially grown on HF-treated Si (001) substrate using a DC magnetron sputtering method. Typical GMR effects could be observed in epitaxial film with a weak antiferromagnetic exchange coupling while non epitaxial film showed unsaturated and broad MR curves probably due to inter-diffusion between NiFe and Cu layers. Ferromagnetic resonance (FMR) experiment showed two distinct absorption peaks in all films. Each peak was revealed to come from each NiFe layer with different magnetic property. In FMR measurement very clear interface in epitaxial films could be confirmed by a lower value of line width (ΔH) and higher M$\sub$s/ of epitaxial film than those of non epitaxial films, respectively.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.583-586
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• 2009

A 14.1" XGA (1024${\times}$768) LCD panel with Integrated Black Data Insertion (IBDI) has been world first developed successfully based on the integrated amorphous Silicon TFT gate driver which we previously introduced. The notable features compared with the conventional integrated a-Si TFT gate driver circuit are that the circuit consists of Dual buffer, Carry buffer structure, and Q-node cross charging for stable signal scanning characteristic and prevention of coupling between signal lines.

• Proceedings of the KIEE Conference
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• 1996.11a
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• pp.439-441
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• 1996

A simple coupling method between APD(avalanche photodiode) arrays and SMF(single mode fiber) arrays on a Silicon carrier composed of V-grooves is proposed and carried out. Jacketed fibers embedded in V-grooves are used as alignment marks instead of patterned pedestals or solder bumps and a optical receiver module are packaged.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1577-1579
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• 2003

AlN thin films are prepared on Si (111) substrate by RF magnetron sputtering. Two-step deposition method is proposed to obtain AlN thin films with high c-axis (002)-TC value and low surface roughnesses. For all the deposited AlN films, the c-axis (002)-orientation, surface mophology, and roughness are characterized in terms of deposition conditions FEAR devices with Al/AlN/Mo/Si(111) configuration are also fabricated. From the frequency response characteristics, the return loss and electromechanical coupling contant($k_t{^2}$) are estimated.

• Journal of Integrative Natural Science
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• v.2 no.4
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• pp.289-292
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• 2009

Perchlorosilanes are useful precursors for the synthesis of hydrosilanes for the fabrication of electronic devices such as silicon thin-film transistors and silicon nanoparticles. For this solution process, requirements of precursors applicable to solution process are relatively low volatile and soluble in common organic solvents. In this work, the decaphenylcyclopentasilane has been obtained from the reaction of the lithium wire and dichlorodiphenylsilane. The reaction of decaphenylcyclopentasilane with lewis acid catalyst, HCl/$AlCl_3$, gives the perchlorocyclopentasilane. Decaphenylcyclopentasilane exhibits an unusual optical property. Its optical property was characterized by UV-vis and fluorescence spectroscopy. Absorption wavelength maxima for the decaphenylcyclopentasilane was 272 nm. Decaphenylcyclopentasilane displayed an emission band at 741 nm with excitation wavelength of 272 nm.

• Nuclear Engineering and Technology
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• v.55 no.2
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• pp.648-654
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• 2023

A dual-particle imager (DPI) is configured in a hand-held form factor, then one can efficiently and conveniently deploy the DPI to detect the presence of special nuclear materials (SNM) and identify any isotopic variations that differ from their natural abundances. Here we show that by maximizing the areal coupling between a pixelated scintillator array and the partitioned photosensor readout such as a silicon photomultiplier (SiPM), the information utilization of the gamma-ray and neutron information in the radiation field can be enhanced, thus enabling one to rapidly acquire spatial maps of the distributions on gamma-ray and neutron emitters.

• Journal of Adhesion and Interface
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• v.8 no.1
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• pp.15-27
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• 2007

Polyimide (PI) surface modification was carried out by ion-beam treatment and silane-imidazole coupling agent to improve the adhesion between polyimide film and copper. Silane-imidazole coupling agent contains imidazole functional groups for the formation of a complex with copper metal through a coordination bonding and methoxy silane groups for the formation of siloxane polymers. The PI film surface was first treated by argon (Ar)/oxygen ($O_2$) ion-beam, followed by dipping it into a modified silane-imidazole coupling agent solution. The results of X-ray photoelectron spectroscopy (XPS) spectra revealed that the $Ar/O_2$ plasma treatment formed oxygen functional groups such as hydroxyl and carbonyl groups on the polyimide film surface and confirmed that the PI surface was modified by a coupling reaction with imidazole-silane coupling agent. Adhesion between copper and the treated PI film by ion-beam and coupling agent was superior to that with untreated PI film. In addition, adhesion of PI film treated by an $Ar/O_2$ plasma to copper was better than that of PI film treated by a coupling agent. The peeled-off layers from the copper-PI film joint were completely different in chemical composition each other. The layer of PI film side showed similar C1s, N1s, O1s spectra to the original Upilex-S and no Si and Cu atoms appeared. On the other hand the layer of copper side showed different C1s and N1s spectra from the original PI film and many Si and Cu atoms appeared. This indicates that the failure occurs at an interface between the imidazole-silane and PI film layers rather than within the PI layers.

• Journal of Magnetics
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• v.5 no.4
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• pp.139-142
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• 2000

The interlayer coupling between adjacent ferromagnetic layers was examined for CoFe/Cu/NiFe trilayer systems. A series of films of CoFe (20 nm)/Cu($t_{cu}$)/NiFe (20 nm) trilayers with Cu spacer thickness, $t_{cu}$, in the range of 1~10 m was deposited on Si(100) wafers at room temperature by DC magnetron sputtering. In order to understand the dependence of the magnetic interaction between ferromagnetic $Co_{90}Fe_{10}$ (wt.%) and $Ni_{81}Fe_{19}$ (wt.%) layers separated by a nonmagnetic Cu spacer on the Cu layer thickness, we investigated the derivative ferromagnetic resonance (FMR) spectra. The FMR results were analyzed using the model of Layadi and Art-man for interlayer interaction. The interlayer coupling constant decreases in an oscillatory manner as the Cu spacer thickness increases up to 10 nm and approaches zero above 10 nm. The interlayer coupling constant is positive for all samples. Hence, it seems that the exchange coupling between adjacent CoFe and NiFe layers separated by a Cu layer is ferromagnetic.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.12
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• pp.654-664
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• 2000

Thin films of ZnO are deposited by using an RF magnetron sputtering with varying the substrate temperature(RT~39$0^{\circ}C$) and RF power(50~250W). Cu-doped ZnO(denoted by ZnO:Cu) films have also been prepared by co-spputtering of a ZnO target on which some Cu-chips are attached. Different substrate materials, such as Si, $SiO_{2}/Si$, sapphire, DLC/Si, and poly-diamond/Si, are employed to compare the c-axial growth features of deposited ZnO films. Texture coefficient(TC) values for the (002)-preferential growth are estimated from the XRD spectra of deposited films. Optimal ranges of RF powers and substrate temperatures for obtaining high TC values are determined. Effects of Cu-doping conditions, such as relative Cu-chip sputtering areas, $O_{2}/(Ar+O_{2})$ mixing ratios, and reactor pressures, on TC values, electrical resistivities, and relative Cu-compositions of deposited ZnO:Cu films have been systematically investigated. XPS study shows that the relative densities of metallic $Cu(Cu^{0})$ atoms and $CuO(Cu^{2+})$-phases within deposited films may play an important role of determining their electrical resistivities. It should be noted from the experimental results that highly resistive(> $10^{10}{\Omega}cm$ ZnO films with high TC values(> 80%) can be achieved by Cu-doping. SAW devices with ZnO(or Zn):Cu)/IDT/$SiO_{2}$/Si configuration are also fabricated to estimate the effective electric-mechanical coupling coefficient($k_{eff}^{2}$) and the insertion loss. It is observed that the devices using the Cu-doped ZnO films have a higher $k_{eff}^{2}$ and a lower insertion loss, compared with those using the undoped films.