• 한국표면공학회지
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• 제29권5호
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• pp.407-414
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• 1996

We have investigated the effects of H atoms on thin film growth processes and surface reactions. In the oxidation of Si, Si surfaces are passivated against the $O_2$ adsorption by terminating dangling bonds with H atoms. Moreover, the existence of Si-H bonds on Si(100) surfaces enhances the structural relaxation of Si-O-Si bonds due to a charge transfer from Si-Si back bonds. In the heteroepitaxial growth of a Si/Ge/Si(100) system, H atoms suppress the segregation of Ge atoms into Si overlayers since the exchange of Ge atoms with Si atoms bound with H must be accompanied with breaking of Si-H bonds. However, 3-dimensional island growth is also promoted by atomic H irradiation, which is considered to result from the suppression of surface migration of adsorbed reaction species and from the lowering of step energies by the H termination of dangling bonds.

• 한국결정학회지
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• 제14권2호
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• pp.56-61
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• 2003

Nanocrystalline hydrogenated silicon (nc-Si : H) thin films were deposited at room temperature by plasma enhanced chemical vapor deposition (PECVD): a mixture of SiH₄ and H₂ gas was introduced into the evacuated reaction chamber. When the H₂ gas flow rate was low, the density of Si-H₃ bonds was high in the films. On the other hand, when the H₂ gas flow rate was high, e.g., 100 sccm, a large number of Si-H bonds contributed to the passivation of the surface of the large volume of Si nanocrystallites. The relative fraction of the Si-H₃ and Si-H₂ bonds in the amorphous matrix varied sensitively with the H₂ gas flow rate. The variation was associated with the change in the intensity as well as the wavelength of the main PL peaks, indicating the change in the total volume as well as the size of the Si nanocrystallites in the films.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 하계학술대회 논문집 C
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• pp.1019-1021
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• 1995

Light induced degradation of hydrogenated amorphous silicon(a-Si:H) are related to the number of weak dangling bonds which are thought to be responsible for the Staebler-Wronski effects, and caused the many photoelectric problems in applications of thin film transistors and solar cell, etc. In this paper, we deposited fluorinated amorphous silicon films(a-Si:H;F) with $SiH_4$ and $SiF_4$ gas mixture and investigated the effects of fluorine atoms on the evoluations of the crystallinity and improvements of light instability. We have found that micro-crystallinity produced in a-SI:H;F films and marked maximum value of 22% at the flow rate of $SiH_4:SiF_4$=2:10 sccm by UV spectrophotometer measurement, while n-Si:H film deposited with only $SiH_4$ gas showed no crystallinity. Light-induced degradation property of a-Si:H;F films is also improved which is mainly due to the etching effects of fluorine atoms on the weak Si-Si bonds and unstable hydrogen bonds. It is considered that involving fluorine atoms in a-Si:H films may contribute to the suppression of light-induced degradation and evolution of micro-crystallinity.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1991년도 추계학술대회 논문집 학회본부
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• pp.265-268
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• 1991

In the study, PPTMDSO(plasma-polymerized tetramethyldisiloxane) films were deposited on on glass substrate in a paralled plate reactor. As the function of RF power increased from 20 W to 110 W, and the substrate temperature increased from $25^{\circ}C$ to $100^{\circ}C$, the deposit ion rate, increased. When oxygen was intentionally added in monomer vapor, the concentration of Si-O-Si bonds increased while C-H, Si-H, -CH3, Si(CH3)x, -CH3, and Si-C bonds decreased in IR spectra. Thermal stability of PPTMSDO film were investigated and weight loss at $800^{\circ}C$ was 7.3 %.

• 한국표면공학회지
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• 제25권5호
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• pp.271-281
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• 1992

Amorphous hydrogenated silicon carbide(a-Si1-xCx : H) films have been prepared by the rf sputtering using a silicon target in a gas mixture of Argon and methane with varying methane gas flow rate(fCH) in the range of 1.5 to 3.5 sccm at constant Argon flow rate of 30sccm and rf power in the range of 3 to 6 W/$\textrm{cm}^2$. The effects of methane flow rate and rf power on the structure and optical properties of a-Si1-xCx : H films have been analysed by measuring both the IR absorption spectrum and the UV transmittance for the films. With increasing the methane flow rate, the optical band gap(Eg) of a-Si1-xCx : H films increases gradually from 1.6eV to the maximum value of 2.42eV at rf power of 4 W/$\textrm{cm}^2$, which is due to an increases in C/Si ratio in the films by an significant increase in the number of C-Hn bonds. As the rf power increases, the number of Si-C and Si-Hn bonds increases rapidly with simultaneous reduction in the number of C-Hn bonds, which is associated with an increase in both degree of methane decomposition and sputtering of silicon. The effects of rf power on the Eg of films are considerably influenced by the methane flow rate. At low methane flow rate, the Eg of films decreased from 2.3eV to 1.8eV with the rf power. On the other hand, at high methane flow rate, that of films increased slowly to 2.4eV.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2000년도 제1회 학술대회 논문집
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• pp.155-156
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• 2000

We propose a new in-situ fluorine passivation of poly-Si TFTs by excimer laser annealing to reduce the trap density and improve the reliability significantly. This improvement is due to the formation of stronger Si-F bonds than Si-H bonds which passivate the trap states.

• 한국진공학회지
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• 제15권1호
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• pp.50-56
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• 2006

[ $Si(5\;5\;12)-2{\times}1$ ] 표면에 벤젠과 피리딘의 흡착구조를 80K 온도에서 주사 터널링 현미경과 density functional theory 계산 방법으로 연구했다. 벤젠 분자는 기울어진 butterfly 형태로 $Si(5\;5\;12)-2\times1$의 D2, D3 유닛에 두 개의 adatom과 강하게 결합된다. 흡착 벤젠 분자에 두 개의 C=C 이중 결합이 있으며 탄소와 Si adatom 사이에 $di-\sigma$ 결합이 있다. 피리딘 분자는 Si-N dative 결합 또는 $di-\sigma$ 형태로 D2와 D3 유닛의 adatom과 결합을 한다 질소 원자의 홀전자쌍에 의해 결합된 dative 결합은 수직 형태의 구조를 띠며 $di-\sigma$ 결합보다 더 안정한 것으로 나타났다. $Di-\sigma$ 결합은 Si-C2와 Si-C5 또는 Si-Nl와 Si-C4으로 형성된다.

• Bulletin of the Korean Chemical Society
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• 제17권8호
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• pp.696-699
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• 1996

Silicate and borosilicate gels were prepared by the sol-gel process and thermally treated in the 150-850 ℃ temperature range. Solid-state 1H MAS and 29Si CP/MAS NMR spectroscopy were used to investigate the effects of heat treatments on the silicate gel to glass conversion process. The 1H NMR isotropic chemical shifts and the relative intensities of hydrogen bonded and isolated silanol groups have been used to access the information concerning the dehydration process on the silicate gel surface. The 29Si NMR isotropic chemical shifts affected by the local silicon environment have been used to determine the degree of crosslinking, i.e. the number of siloxane bonds. These NMR results suggest that the silicate gel to glass conversion process is occurred by two stages which are dependent on the temperature; (1) the formation of particles up to 450 ℃ and (2) the formation of large particles by aggregation of each separated single particle above 450 ℃. In addition, the effects of B atom on the formation of borosiloxane bonds in borosilicates have been discussed.

• 한국표면공학회지
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• 제32권3호
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• pp.297-302
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• 1999

In situ measurement of infrared absorption spectra has been performed during low-temperature plasma-enhanced chemical vapor depositiion of silicon-oxide films using tetramethoxysilane as a silicon source. Several absorption bands due to the reactant molecules are clearly observed before deposition. In the plasma, these bands completely disappear at any oxygen mixing ratio. This result shows that most of the tetramethoxysilane molecules are dissociated in the rf plasma, even C-H bonds. Existence of Si-H bonds in vapor phase and/or on the film surface during deposition has been found by infrared diagnostics. We observed both a decrease in Si-OH absorption and an increase in Si-O-Si after plasma off, which means the dehydration condensation reaction continues after deposition. The rate of this reaction is much slower than the deposition ratio of the films.

• Journal of Information Display
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• 제1권1호
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• pp.25-28
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• 2000

We propose a new in-situ fluorine passivation of poly-Si TFTs using excimer laser annealing to reduce the trap state density and improve reliability significantly. To investigate the effect of an in-situ fluorine passivation, we have fabricated fluorine-passivated p-channel poly-Si TFTs and examined their electrical characteristics and stability. A new in-situ fluorine passivation brought about an improvement in electrical characteristic. Such improvement is due to the formation of stronger Si-F bonds than Si-H bonds in poly-Si channel and $SiO_2$/Poly-Si interface.