• Composites Research
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• 제29권4호
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• pp.223-229
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• 2016

SiC 나노입자는 고분자 수지의 굴곡특성을 강화하기 위해 사용된다. 본 연구는 대용량 SiC 나노입자가 함유된 에폭시 수지를 제조하고 분산도를 평가한 것에 관한 내용이다. SiC 나노입자를 혼합하는 과정에 교반기와 초음파 분쇄기를 동시에 사용하여 20 wt%의 SiC 나노입자 강화 에폭시 복합재료를 제조하였다. 교반기와 분쇄기를 동시에 이용하는 방법으로 분산속도와 분산도가 개선됨을 기계적 물성 평가와 FE-SEM 결과로 확인하였다. 이러한 결과로 SiC 나노입자의 분산 모델을 구축하였다. 궁극적으로, 탄소섬유(UD 타입)와 20 wt% SiC 나노입자 강화 에폭시 수지를 사용하여 복합재료를 제조하였다. 교반기와 분쇄기를 동시에 사용했을 경우 초음파 분쇄기만 이용했을 경우에 비해 우수한 복합재료의 물성을 나타내었다.

• 한국전기전자재료학회논문지
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• 제29권4호
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• pp.255-262
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• 2016

Effects of $SiO_x$ or C shells on electrochemical properties of Si nanoparticles were investigated. $SiO_x$ shells with thickness of 10~15 nm were formed on homogeneously crystalline Si nanoparticles. Incase of Si-C nanoparticles, there were 30~40 layers of C with a number of defects. Li-ion batteries were fabricated with the above-mentioned nanoparticles, and their electrochemical properties were measured. Pristine Si shows a high IRC (initial reversible capacity) of 2,517 mAh/g and ICE (initial columbic efficiency) of 87%, but low capacity retention of 22%, respectively. $SiO_x$ shells decreased IRC (1,534 mAh/g) and ICE (54%), while the retention increased up to 65%, which can be explained by irreversible phases such as $LiO_2$ and $Li_2SiO_3$. C shells exhibited no differences in IRC and ICE compared to the pristine Si but an enhanced retention of 54%, which might be from proper defect structures.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.598-601
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• 2000

We investigated the fabrication of Si nanoparticle and $C_{60}$ thin films by pulsed laser ablation. As a result, we observed visible green photoluminescence spectra in the Si/C$_{60}$ multilayer films after laser annealing. It is considered that this green photoluminescence is occurred from SiC particles, which is produced reaction of Si nanoparticles with $C_{60}$ via laser annealing.ing.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.197-198
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• 2009

This paper describes the Raman scattering characteristics of polycrystalline (poly) 3C-SiC films, which were deposited on the thermally oxidized Si(100) substrate by the atmosphere pressure chemical vapor deposition (APCVD) method according to growth temperature. TO and LO phonon modes to 2.0m thick poly 3C-SiC deposited at $1180^{\circ}C$ were measured at 794.4 and $965.7\;cm^{-1}$ respectively. From the intensity ratio of $I_{(LO)}/I_{(TO)}$ 1.0 and the broad full width half maximum (FWHM) of TO modes, itcan be elucidated that the crystallinity of 3C-SiC forms polycrystal instead of disordered crystal and the crystal defect is small. At the interface between 3C-SiC and $SiO_2$, $1122.6\;cm^{-1}$ related to C-O bonding was measured. Here poly 3C-SiC admixes with nanoparticle graphite with the Raman shifts of D and G bands of C-C bonding 1355.8 and $1596.8\;cm^{-1}$. Using TO mode of 2.0 m thick poly 3C-SiC, the biaxial stress was calculated as 428 MPa.

• Current Photovoltaic Research
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• 제4권2호
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• pp.64-67
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• 2016

We investigated the influences of Ag nanoparticle (NP) arrays and surface nanohole (NH) patterns on the optical characteristics of 10-${\mu}m$-thick c-Si wafers using finite-difference time-domain (FDTD) simulations. In particular, we comparatively studied the plasmonic effects of both monomer arrays (MA) and heptamer arrays (HA) consisting of identical Ag NPs. HA improved the optical absorption of the c-Si wafers in much wider wavelength range than MA, with the help of hybridized plasmon modes. The light trapping capability of the NH array pattern is superior to that of the Ag plasmonic NPs. We also found that the addition of the Ag HA on the wafers with surface NH patterns further enhanced optical absorption: the expected short-circuit current density was as high as $34.96mA/cm^2$.

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2003년도 추계총회 및 연구발표회 초록집
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• pp.84.2-84
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• 2003

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.93-93
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• 2008

This paper presents the Raman scattering characteristics of poly (polycrystalline) 3C-SiC thin films deposited on AlN buffer layer by atmospheric pressure chemical vapor deposition (APCVD) using hexamethyldisilane (MHDS) and carrier gases (Ar + $H_2$).The Raman spectra of SiC films deposited on AlN layer of before and after annealings were investigated according to the growth temperature of 3C-SiC. Two strong Raman peaks, which mean that poly 3C-SiC admixed with nanoparticle graphite, were measured in them. The biaxial stress of poly 3C-SiC/AlN was calculated as 896 MPa from the Raman shifts of 3C-SiC deposited at $1180^{\circ}C$ on AlN of after annealing.

• 한국염색가공학회지
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• 제29권3호
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• pp.131-138
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• 2017

Most of high performance fabrics for the car racing protective clothing have been developed to have thermal resistance, flame retardant property, impact resistance and anti-frictional properties to protect the racer from the crucial accident. In this study, the meta-aramid fabric, which has inherent flame retardant, was coated with nanoparticles of SiC to enhance the impact resistance and anti-friction properties. Uniform coating of the nanoparticles onto the fabrics was obtained by using tape casting method. As the experimental parameters, size and content of the SiC nanoparticle were varied with the coating conditions of the fabric surface. The effects of the nanoparticle coating on the properties of meta-aramid fabric were examined with various instrumental analyses such as SEM, tensile strength and abrasion test.

• Transactions on Electrical and Electronic Materials
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• 제12권3호
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• pp.102-105
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• 2011

This work describes the characteristics of zinc oxide (ZnO) thin films formed on a polycrystalline (poly) 3C-SiC buffer layer using a sol-gel process. The deposited ZnO films were characterized using X-ray diffraction, scanning electron microscopy, and photoluminescence (PL) spectra. ZnO thin films grown on the poly 3C-SiC buffer layer had a nanoparticle structure and porous film. The effects of post-annealing on ZnO film were also studied. The PL spectra at room temperature confirmed the crystal quality and optical properties of ZnO thin films formed on the 3C-SiC buffer layer were improved due to close lattice mismatch in the ZnO/3C-SiC interface.

• 한국전기전자재료학회논문지
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• 제21권6호
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• pp.493-498
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• 2008

This Paper describes the Raman scattering characteristics of polycrystalline (Poly) 3C-SiC thin films, in which they were deposited on AlN buffer layer by APCVD using hexamethyldisilane (MHDS) and carrier gases (Ar+$H_2$). When the Raman spectra of SiC films deposited on the AlN layer of before and after annealing were worked according to growth temperature, D and G bands of graphite were measured. It can be explained that poly 3C-SiC films admixe with nanoparticle graphite and its C/Si rate is higher than ($C/Si\;{\approx}\;3$) that of the conventional SiC, which has no D and G bands related to graphite. From the Raman shifts of 3C-SiC films deposited at $1180^{\circ}C$ on the AlN layer of after annealing, the biaxial stress of poly 3C-SiC films was obtained as 896 MPa.