Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Raman Scattering Characteristics of Polycrystalline 3C-SiC Thin Films deposited on AlN Buffer Layer

AlN 버퍼층위에 증착된 다결정 3C-SiC 박막의 라만 산란 특성

  • 정귀상 (울산대학교 전기전자정보시스템공학부) ;
  • 김강산 (울산대학교 전기전자정보시스템공학부)
  • Published : 2008.06.01
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Abstract

This Paper describes the Raman scattering characteristics of polycrystalline (Poly) 3C-SiC thin films, in which they were deposited on AlN buffer layer by APCVD using hexamethyldisilane (MHDS) and carrier gases (Ar+$H_2$). When the Raman spectra of SiC films deposited on the AlN layer of before and after annealing were worked according to growth temperature, D and G bands of graphite were measured. It can be explained that poly 3C-SiC films admixe with nanoparticle graphite and its C/Si rate is higher than ($C/Si\;{\approx}\;3$) that of the conventional SiC, which has no D and G bands related to graphite. From the Raman shifts of 3C-SiC films deposited at $1180^{\circ}C$ on the AlN layer of after annealing, the biaxial stress of poly 3C-SiC films was obtained as 896 MPa.

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References

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