Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2009.06a
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- Pages.197-198
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- 2009
Raman Scattering Investigation of Polycrystalline 3C-SiC Thin Films Deposited on $SiO_2$ by APCVD using HMDS
CVD로 성장된 다결정 3C-SiC 박막의 라만특성
- Yoon, Kyu-Hyung (Univ. of Ulsan) ;
- Chung, Gwiy-Sang (Univ. of Ulsan)
- Published : 2009.06.18
Abstract
This paper describes the Raman scattering characteristics of polycrystalline (poly) 3C-SiC films, which were deposited on the thermally oxidized Si(100) substrate by the atmosphere pressure chemical vapor deposition (APCVD) method according to growth temperature. TO and LO phonon modes to 2.0m thick poly 3C-SiC deposited at