• Title/Summary/Keyword: Si-C nanoparticle

Search Result 40, Processing Time 0.024 seconds

A New Mixing Method of SiC Nanoparticle Reinforced Epoxy Composites with Large Concentration of SiC Nanoparticle (대용량 SiC 나노입자 강화 에폭시 복합재료의 새로운 분산방법)

  • Kwon, Dong-Jun;Shin, Pyeong-Su;Kim, Jong-Hyun;Park, Joung-Man
    • Composites Research
    • /
    • v.29 no.4
    • /
    • pp.223-229
    • /
    • 2016
  • SiC nanoparticles were used to increase flexural properties of polymer matrix. This study was to manufacture huge concentration SiC nanoparticle/epoxy composites and to evaluate the dispersion. During mixing SiC nanoparticle and epoxy, 20 wt% SiC nanoparticle in total composites was used with both stirrer and sonication equipment together. Mixing speed and dispersion were improved with the method by using both stirrer and sonication equipment at the same time via mechanical test and FE-SEM. Based on the results, modeling of SiC nanoparticle dispersion could be established. Ultimately, unidirectional carbon fiber reinforced composites was manufactured using 20 wt% SiC nanoparticle/epoxy. Mechanical property of CFRP using dual stirrer and sonication mixing method was better than composites by single sonication mixing method.

Influence of Shell on the Electrochemical Properties of Si Nanoparticle (Si 나노입자에서 shell이 전기화학적 특성에 미치는 영향)

  • Lee, Jeong-eun;Koo, Jeong-boon;Jang, Bo-yun;Kim, Sung-Soo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.29 no.4
    • /
    • pp.255-262
    • /
    • 2016
  • Effects of $SiO_x$ or C shells on electrochemical properties of Si nanoparticles were investigated. $SiO_x$ shells with thickness of 10~15 nm were formed on homogeneously crystalline Si nanoparticles. Incase of Si-C nanoparticles, there were 30~40 layers of C with a number of defects. Li-ion batteries were fabricated with the above-mentioned nanoparticles, and their electrochemical properties were measured. Pristine Si shows a high IRC (initial reversible capacity) of 2,517 mAh/g and ICE (initial columbic efficiency) of 87%, but low capacity retention of 22%, respectively. $SiO_x$ shells decreased IRC (1,534 mAh/g) and ICE (54%), while the retention increased up to 65%, which can be explained by irreversible phases such as $LiO_2$ and $Li_2SiO_3$. C shells exhibited no differences in IRC and ICE compared to the pristine Si but an enhanced retention of 54%, which might be from proper defect structures.

Visible light emission from $C_60$ and Si nanoparticle film by laser process (C60 및 Si 초미립자 박막의 Laser 반응에 의한 가시광선발광)

  • ;Hideomi Koinuma
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2000.11a
    • /
    • pp.598-601
    • /
    • 2000
  • We investigated the fabrication of Si nanoparticle and $C_{60}$ thin films by pulsed laser ablation. As a result, we observed visible green photoluminescence spectra in the Si/C$_{60}$ multilayer films after laser annealing. It is considered that this green photoluminescence is occurred from SiC particles, which is produced reaction of Si nanoparticles with $C_{60}$ via laser annealing.ing.

  • PDF

Raman Scattering Investigation of Polycrystalline 3C-SiC Thin Films Deposited on $SiO_2$ by APCVD using HMDS (CVD로 성장된 다결정 3C-SiC 박막의 라만특성)

  • Yoon, Kyu-Hyung;Chung, Gwiy-Sang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2009.06a
    • /
    • pp.197-198
    • /
    • 2009
  • This paper describes the Raman scattering characteristics of polycrystalline (poly) 3C-SiC films, which were deposited on the thermally oxidized Si(100) substrate by the atmosphere pressure chemical vapor deposition (APCVD) method according to growth temperature. TO and LO phonon modes to 2.0m thick poly 3C-SiC deposited at $1180^{\circ}C$ were measured at 794.4 and $965.7\;cm^{-1}$ respectively. From the intensity ratio of $I_{(LO)}/I_{(TO)}$ 1.0 and the broad full width half maximum (FWHM) of TO modes, itcan be elucidated that the crystallinity of 3C-SiC forms polycrystal instead of disordered crystal and the crystal defect is small. At the interface between 3C-SiC and $SiO_2$, $1122.6\;cm^{-1}$ related to C-O bonding was measured. Here poly 3C-SiC admixes with nanoparticle graphite with the Raman shifts of D and G bands of C-C bonding 1355.8 and $1596.8\;cm^{-1}$. Using TO mode of 2.0 m thick poly 3C-SiC, the biaxial stress was calculated as 428 MPa.

  • PDF

Optical Absorption Enhancement for Ultrathin c-Si Solar Cells using Ag Nanoparticle and Nano-hole Arrays (Ag 나노입자와 나노홀 배열구조를 이용한 초박형 단결정 Si 태양전지의 광흡수 증진)

  • Kim, Sujung;Cho, Yunae;Sohn, Ahrum;Kim, Dong-Wook
    • Current Photovoltaic Research
    • /
    • v.4 no.2
    • /
    • pp.64-67
    • /
    • 2016
  • We investigated the influences of Ag nanoparticle (NP) arrays and surface nanohole (NH) patterns on the optical characteristics of 10-${\mu}m$-thick c-Si wafers using finite-difference time-domain (FDTD) simulations. In particular, we comparatively studied the plasmonic effects of both monomer arrays (MA) and heptamer arrays (HA) consisting of identical Ag NPs. HA improved the optical absorption of the c-Si wafers in much wider wavelength range than MA, with the help of hybridized plasmon modes. The light trapping capability of the NH array pattern is superior to that of the Ag plasmonic NPs. We also found that the addition of the Ag HA on the wafers with surface NH patterns further enhanced optical absorption: the expected short-circuit current density was as high as $34.96mA/cm^2$.

Raman characteristics of polycrysta1line 3C-SiC thin films grown on AlN buffer layer (AlN 버퍼층위에 성장된 다결정 3C-SiC 박막의 라만 특성)

  • Lee, Yun-Myung;Chung, Gwiy-Sang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2008.11a
    • /
    • pp.93-93
    • /
    • 2008
  • This paper presents the Raman scattering characteristics of poly (polycrystalline) 3C-SiC thin films deposited on AlN buffer layer by atmospheric pressure chemical vapor deposition (APCVD) using hexamethyldisilane (MHDS) and carrier gases (Ar + $H_2$).The Raman spectra of SiC films deposited on AlN layer of before and after annealings were investigated according to the growth temperature of 3C-SiC. Two strong Raman peaks, which mean that poly 3C-SiC admixed with nanoparticle graphite, were measured in them. The biaxial stress of poly 3C-SiC/AlN was calculated as 896 MPa from the Raman shifts of 3C-SiC deposited at $1180^{\circ}C$ on AlN of after annealing.

  • PDF

Characteristics of Meta-aramid Fabrics Coated with Slurry of Nanoscale SiC Particles (나노 탄화규소(SiC) 슬러리로 코팅된 메타-아라미드 직물의 특성)

  • Park, Jong Hyeon;Lee, Sun Young;Won, Jong Sung;Lee, Eung Bo;Kim, Eui Hwa;Lee, Seung Goo
    • Textile Coloration and Finishing
    • /
    • v.29 no.3
    • /
    • pp.131-138
    • /
    • 2017
  • Most of high performance fabrics for the car racing protective clothing have been developed to have thermal resistance, flame retardant property, impact resistance and anti-frictional properties to protect the racer from the crucial accident. In this study, the meta-aramid fabric, which has inherent flame retardant, was coated with nanoparticles of SiC to enhance the impact resistance and anti-friction properties. Uniform coating of the nanoparticles onto the fabrics was obtained by using tape casting method. As the experimental parameters, size and content of the SiC nanoparticle were varied with the coating conditions of the fabric surface. The effects of the nanoparticle coating on the properties of meta-aramid fabric were examined with various instrumental analyses such as SEM, tensile strength and abrasion test.

Characteristics of ZnO Films Deposited on Poly 3C-SiC Buffer Layer by Sol-Gel Method

  • Phan, Duy-Thach;Chung, Gwiy-Sang
    • Transactions on Electrical and Electronic Materials
    • /
    • v.12 no.3
    • /
    • pp.102-105
    • /
    • 2011
  • This work describes the characteristics of zinc oxide (ZnO) thin films formed on a polycrystalline (poly) 3C-SiC buffer layer using a sol-gel process. The deposited ZnO films were characterized using X-ray diffraction, scanning electron microscopy, and photoluminescence (PL) spectra. ZnO thin films grown on the poly 3C-SiC buffer layer had a nanoparticle structure and porous film. The effects of post-annealing on ZnO film were also studied. The PL spectra at room temperature confirmed the crystal quality and optical properties of ZnO thin films formed on the 3C-SiC buffer layer were improved due to close lattice mismatch in the ZnO/3C-SiC interface.

Raman Scattering Characteristics of Polycrystalline 3C-SiC Thin Films deposited on AlN Buffer Layer (AlN 버퍼층위에 증착된 다결정 3C-SiC 박막의 라만 산란 특성)

  • Chung, Gwiy-Sang;Kim, Kang-San
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.21 no.6
    • /
    • pp.493-498
    • /
    • 2008
  • This Paper describes the Raman scattering characteristics of polycrystalline (Poly) 3C-SiC thin films, in which they were deposited on AlN buffer layer by APCVD using hexamethyldisilane (MHDS) and carrier gases (Ar+$H_2$). When the Raman spectra of SiC films deposited on the AlN layer of before and after annealing were worked according to growth temperature, D and G bands of graphite were measured. It can be explained that poly 3C-SiC films admixe with nanoparticle graphite and its C/Si rate is higher than ($C/Si\;{\approx}\;3$) that of the conventional SiC, which has no D and G bands related to graphite. From the Raman shifts of 3C-SiC films deposited at $1180^{\circ}C$ on the AlN layer of after annealing, the biaxial stress of poly 3C-SiC films was obtained as 896 MPa.