• 대한전자공학회논문지
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• 제26권7호
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• pp.73-82
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• 1989

실리콘계 절연박막 형성을 위한 저온공정을 개발하기 위하여 photo-CVD장치를 제작하여 $SiO_2$ 박막을 $50{\sim}250^{\circ}C$ 범위에서 증착시켰다. 이때 $SiH_4/N_2O$ 혼합가스는 수은증감반응법을 사용하지 않고 저압수은램프의 직접 광여기에 의해 분해시켰다. AES와 ESCA 분석결과 Si와 O의 화학량론적 구성이 거의 모든 공정조건에서 1:2로 나타났고, Si와 O원자의 결합상태가 $SiO_2$의 형태로 이루어져 있음을 보여주었다. 그리고 박막의 굴절율은 $1.39{\sim}1.44$의 범위로 나타나, 저온증착에 의해 밀도가 비교적 낮은 박막이 형성됨을 보였다.

• 한국세라믹학회지
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• 제52권4호
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• pp.243-247
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• 2015

Si(Al)ON precursor was synthesized by formation of new Si-N bond using organoaluminum imine and liquid type poly(phenyl carbosilane). It was decomposed between $200-600^{\circ}C$, and the ceramic yield was 51% after pyrolysis. 150 - 200 nm in thickness of coating film was obtained by spin coating method. The precursor was easily oxidized during process because it was unstable in air. However the oxygen content was limited to 0.5 - 0.7 to silicon in heat treatment step. Even though the content of nitrogen was decreased by pyrolysis, Al-N and Si-N bonds were formed in ammonia atmosphere, and Si(Al)ON film was formed with 0.2 in content to silicon.

• Bulletin of the Korean Chemical Society
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• 제8권4호
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• pp.242-246
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• 1987

The hydrogen abstraction reactions of $SiH_4, SiH_2Cl_2 \;and\; SiHCl_3$ by ground state chlorine atoms generated photochemically from chlorine molecules have been studied at temperatures between 15 and $100^{\circ}C.$ The absolute rates for the reactions have been obtained by a competition technique using ethane as a competitor. The rate expressions ($in cm^3/mol/s$) are found to conform to an Arrhenius rate law: $k_{SiH_4} = (7.98 {\pm} 0.42) {\times} 10^{13}$ exp $[-(1250 {\pm}20)/T].$ $k_{SiH_2Cl_2} = (2.25 {\pm} 0.12) {\times} 10^{15}$ exp[-(1010 ${\pm}$ 10)/T]. $k_{SiHCl_3} = (9.04 {\pm} 0.28) {\times} 10^{14}\; exp[-(1200 {\pm} 10)/T].$ The activation energies obtained from this study represent the same trend as with the carbon analogues, while this trend was not found with respect to the bond dissociation energies among silicon compound homologues. These anomalous behaviors were interpreted in terms of electronic effects and of the structural differences between these compounds.

• 대한치과보존학회:학술대회논문집
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• 대한치과보존학회 2003년도 제120회 추계학술대회 제 5차 한ㆍ일 치과보존학회 공동학술대회
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• pp.569-569
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• 2003

I. Objectives The purpose of this study was to evaluate the effort of a modified luting procedure called "dual bonding technique" by compare micro-shear bond strength to different luting procedures of ceramics to dentin. II. Materials and Methods Eighty-four freshly extracted caries-and restoration-free human third molar were embedded in epoxy resin using acrylic ring. Flat superficial occlusal dentin surfaces were obtained, initially using a Low speed diamond saw and exposed detin surface was group with ＃600-grit SiC paper.(omitted)

• 한국결정성장학회지
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• 제24권1호
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• pp.41-45
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• 2014

다양한 공정 조건으로 $SiN_x$와 $SiO_2$ 박막을 형성하고 이에 대한 패시베이션 특성에 대한 연구를 수행하였다. Plasma enhanced chemical vapor deposition(PECVD)을 이용하여 증착된 $SiN_x$ 박막의 경우, 증착 두께가 증가함에 따라 페시베이션 특성이 향상되는 것을 관찰하였다. 이는 PECVD 증착 공정 중 유입되는 수소 원자들이 실리콘 표면에 존재하는 Dangling bond와 결합하여 소수 캐리어의 재결합 현상을 효과적으로 감소시켰기 때문이다. 건식 산화법으로 형성된 $SiO_2$ 박막은 습식 산화법으로 형성된 것 보다 치밀한 계면 구조를 가짐으로 인하여 약 20배 이상 우수한 패시베이션 특성을 나타내었다. 건식 산화 공정 온도가 증가함에 따라 패시베이션 특성이 열화되는 현상이 발생하였고, Capacitance-voltage(C-V) 및 Conductance-voltage(G-V) 분석을 통하여 $SiO_2$/실리콘 계면에 존재하는 계면 결함 밀도 증가에 의해 나타나는 현상임을 알 수 있었다.

• 대한치과보철학회지
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• 제38권4호
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• pp.427-437
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• 2000

Recently the 2nd generation laboratory composite resins were introduced. Although the mechanical properties of these composite resins have been improved, there were some disadvantages such as discoloration, low abrasion resistance and debonding between metal and resin. The purpose of this study was to evaluate the tensile bond strength between non-pecious dental alloy(verabond) and four veneering reinforced composite resins ; Targis(Ivoclar Co., U.S.A.), Artglass(Kulzer CO., Germany), Sculpture(Jeneric Pentron Co., U.S.A.), and Estonia(Kurary Co., Japan). All test metal specimens were polished with #1,000 SiC paper, and sandblasted with $250{\mu}m$ aluminum oxide. After then. according to manufacturer's instructions metal adhesive primer and veneering resins were applied. All test specimens were divided into two groups. One group was dried in a desiccator at $25^{\circ}C$ for 3 days, the other group was subjected to thermal cycling($2,000{\times}$) in water($5/55^{\circ}C$). Tensile bond strength was measured using Instron Universal Testing machine and the fractured surface was examined under the naked eyes and scanning electron microscope. Within the limitations imposed in this study, the following conclusions can be drawn: 1. In no-thermal cycling groups, there were no significant differences between Estenia and VMK68 but there were significant differences between Targis, Artglass, Sculpture and VMK68(p<0.05). 2. In no-thermal cycling resin groups, the highest tensile bond strength was observed in Estenia and there were significant differences between Estenia and the other resins(p<0.05). 3. Before and after thermal cycling, there were significant differences in tensile bond strength of Targis and Artglass(p<0.05). The tensile bond strength of Artglass was decreased and that of Targis was increased. 4. In no-thermal cycling groups, Artglass showed mixed fracture modes(95%), but after thermal cycling, Artglass showed adhesive fracture modes(75%).

• Restorative Dentistry and Endodontics
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• 제22권1호
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• pp.61-75
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• 1997

The bond strengths of composite resin to tooth dentin vary with the methods of cavity preparation and surface treatment. Recent developments in techniques of dentinal surface treatment have renewed interest in microabrasive as a means of tooth preparation, The purpose of this study was to determine the effects of a new method of cavity preparation on the bond of composite resin to dentin. Freshly extracted 144 healthy human third molars were used in this study. The dentin surfaces prepared with #600 SiC abrasive paper were divided into control and air abrasion groups according to the method of dentin surface preparation using different combinations of delivery pressure, time, and acid etching. The shear bond strengths were measured after the composite resin (Clearfil Photo Bright) was bonded to prepared dentin surfaces by light-curing using a dentin bonding system (All-bond 2), In addition, the average surface roughness was measured to investigate the effect of differently prepared dentin surfaces on the shear bond strengths. The surface changes of prepared dentin and the debonded dentin surfaces were observed with SEM (S-2300, Hitachi Co., Japan). The following results from this-study were obtained ; 1. There was no significant difference of shear bond strengths according to the changes of delivery pressure and time. 2. The shear bond strengths were lower than the control in the air abraded-only groups, but those of the additional acid-etched groups were higher than the control. 3. The shear bond strengths to all air-abraded surfaces were increased by acid etching. 4. The correlation between shear bond strengths and surface roughness was not certain, although the mean surface roughness of all air-abraded surfaces has increased evidently while it has slightly decreased for additional acid etching. 5. On SEM examination, the dentinal tubules were almost occluded in the air abraded-only groups, but those were opened in the additional acid-etched groups. 6. The debonded surfaces were showed adhesive failure mode in the air abraded- only groups, while those were showed mainly the mixed and cohesive failure mode in the additional acid-etched groups. These results suggest that the layer produced during cavity preparation or surface treatment with air abrasion must be removed for maximum bond strength of composite resin to dentin.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제51권5호
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• pp.185-190
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• 2002

Capacitor material utilized in the downsizing passive devices and dynamic random access memory(DRAM) requires the physical and electrical properties at given area such as capacitor thickness reduction, relative dielectric constant increase, low leakage current and thermal stability. Common capacitor materials, $SiO_2$, $Si_3N_4$, $SiO_2$/$Si_3N_4$,TaN and et al., used until recently have reached their physical limits in their application to several hundred angstrom scale capacitor. $Ta_2O_{5}$ is known to be a good alternative to the existing materials for the capacitor application because of its high dielectric constant (25 ~35), low leakage current and high breakdown strength. Despite the numerous investigations of $Ta_2O_{5}$ material, there have little been established the clear understanding of the annealing effect on capacitance characteristic and conduction mechanism, design and fabrication for $Ta_2O_{5}$ film capacitor. This study presents the structure-property relationship of reactive-sputtered $Ta_2O_{5}$ MIM capacitor structure processed by annealing in a vacuum. X-ray diffraction patterns skewed the existence of amorphous phase in as-deposited condition and the formation of preferentially oriented-$Ta_2O_{5}$ in 670, $700^{\circ}C$ annealing. On 670, $700^{\circ}C$ annealing under the vacuum, the leakage current decrease and the enhanced temperature-capacitance characteristic stability. and the leakage current behavior is stable irrespective of applied electric field. The results states that keeping $Ta_2O_{5}$ annealed at vacuum gives rise to improvement of electrical characteristics in the capacitor by reducing oxygen-vacancy and the broken bond between Ta and O.

• 한국재료학회지
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• 제4권5호
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• pp.550-555
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• 1994

본 연구에서는 반응기체 $PaCl_5$ (99.99%)와 $N_2O$(99.99%)를 사용하여 PECVD법으로 P-type(100) Si기판위에 $Ta_2O_5$ 박막을 증착시킨후 RTA 후처리를 통하여 누설전류를 개선시키고자 하였다. 실험결과, 증착온도 증가에 따라 굴절율은 일정하게 증가하였고 $500^{\circ}C$에서 최대 증착속도를 보였다. 증착된 $Ta_2O_5$막의 FT-IR 분석결과 증착온도 증가에 따라 Ta-O bond peak intensity가 증가함을 알 수 있었으며, 누설전류 특정결과 증착온도가 증가함에 따라 누설전류값이 감소함을 알 수 있었다. 또한 증착된 $Ta_2O_5$막을 RFA방법을 이용하여 후처리 한 결과, as deposited 상태보다 누설전류가 감소함을 알 수 있었으며 이는 RTA처리후 AES와 FT-IR 분석을 통하여 $Ta_2O_5$막 내의 oxygen농도와 Ta-O bond peak intensity를 측정한 결과 RTA 후처리에 의하여 $Ta_2O_5$막내의 존재하는 O-deficient 구조들이 감소한 때문이었다.

• 한국재료학회지
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• 제19권1호
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• pp.37-43
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• 2009

Silicon dioxide as gate dielectrics was grown at $400^{\circ}C$ on a polycrystalline Si substrate by inductively coupled plasma oxidation using a mixture of $O_2$ and $N_2O$ to improve the performance of polycrystalline Si thin film transistors. In conventional high-temperature $N_2O$ annealing, nitrogen can be supplied to the $Si/SiO_2$ interface because a NO molecule can diffuse through the oxide. However, it was found that nitrogen cannot be supplied to the Si/$SiO_2$ interface by plasma oxidation as the $N_2O$ molecule is broken in the plasma and because a dense Si-N bond is formed at the $SiO_2$ surface, preventing further diffusion of nitrogen into the oxide. Nitrogen was added to the $Si/SiO_2$ interface by the plasma oxidation of mixtures of $O_2/N_2O$ gas, leading to an enhancement of the field effect mobility of polycrystalline Si TFTs due to the reduction in the number of trap densities at the interface and at the Si grain boundaries due to nitrogen passivation.