• Transactions of the Korean Society of Automotive Engineers
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• v.4 no.5
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• pp.197-205
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• 1996

The flow characteristics of five different 4-valve cylinder heads were investigated in a steady flow rig using laser-Doppler velocimetry. The tumble flow of each head with pentroof combustion chamber was quantified by nondimensional tumble number using a tumble adaptor. The formation of tumbling vortex was examined in an optical single-cylinder engine which has windows for in-cylinder LDV measurements. Tumble vortex ratio was estimated from the tumble flow measurement. The four-valve cylinder heads with pent-roof combustion chamber showed the tumble vortex from the intake process, which was investigated in the steady flow test. The tumble adaptor which converts the tumble into swirl flow was found to be feasible in predicting the tumble flow in the real engine. The tumble strength in the steady flow test coincides with that in the real engine experiment within 15%. It was found that the steady flow test on the four-valve cylinder heads provides the tip for a better design of cylinder head.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2004.10a
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• pp.351-354
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• 2004

This work presents a simple and cost-effective approach for maskless fabrication of positive-tone silicon master for the replica molding of hyperfine elastomeric channel. Positive-tone silicon masters were fabricated by a maskless fabrication technique using the combination of nanoscratch by Nanoindenter ⓡ XP and XOH wet etching. Grooves were machined on a silicon surface coated with native oxide by ductile-regime nanoscratch, and they were etched in a 20 wt％ KOH solution. After the KOH etching process, positive-tone structures resulted because of the etch-mask effect of the amorphous oxide layer generated by nanoscratch. The size and shape of the positive-tone structures were controlled by varying the etching time (5, 15, 18, 20, 25, 30 min) and the normal loads (1, 5 mN) during nanoscratch. Moreover, the effects of the Berkovich tip alignment (0, 45$^{\circ}$) on the deformation behavior and etching characteristic of silicon material were investigated.

• Journal of the Korean Society for Precision Engineering
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• v.20 no.5
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• pp.210-217
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• 2003

In this study, to achieve the optimal conditions for mechanical hyper-fine pattern fabrication process, deformation behavior of the materials during indentation was studied with numerical method by ABAQUS S/W. Polymer (PMMA) and brittle materials (Si, Pyrex glass) were used as specimens, and forming conditions to reduce the elastic restoration and pile-up was proposed. The indenter was modeled a rigid surface. Minimum mesh sizes of specimens are 1-l0mm. The result of the investigation will be applied to the fabrication of the hyper-fine pattern and mold.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.21 no.5
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• pp.784-789
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• 2012

Ultrasonic Cutting which uses a tuned blade resonant in a longitudinal mode, has been used to cut a range of materials from confectionery, baked products and frozen foods, to wood, bone, foams and composites. The Blade design typically uses finite element analysis, and it could be predicted vibration mode, gain and amplitude uniformity of the blade tip at resonant frequency. In this paper, FEA used to predict the vibration characteristic of the blade, and then the results were verified by analysis system of resonant frequency using the processed blade. The crack of the blade which is predicted from FEA was compared with the crack occurred by cutting experiment of rubber materials using the processed blade.

• Proceedings of the Speleological Society Conference
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• 1994.11a
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• pp.108-109
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• 1994

Cheju island is situated at about 90km south of southern most tip of the Korean peninsula. Its shape is an ellips with size of 80$\times$$40km^2$, and it is characterized by a symmetrical form whose peak is Mt. Halla (1950m). Major chemical composition of the rock samples from Manjang gul cave is determined by XRF using the fundamental parameter method consisting of fully auto quantitative analysis, semi quantitative analysis (order estimation) and group quantitative analysis. Judging from chemical composition ($SiO_2=53.07Wt% Fe_2O_3=11.34Wt%, MgO=6.48Wt%, Na_2O=3.07Wt%, K_2O=1.05Wt%$), this rocks may belong to non alkalic basalt. K-Ar ages of two rocks samples from the Manjang gul cave are also determined. The discrepancy of K-Ar ages is found. They are 0.03Ma and 0.42Ma, respectively. This paper describes some problems experienced in dating young volcanic rocks and then discusses chemical composition, X-ray fluorescence analysis and the age of the formation of a lava tunnel such as Manjang gul cave in cheju Island.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.175.1-175.1
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• 2014

Despite growing interest in Ge as a possible alternative to Si, reliable data on Ge surface has been relatively scarce. Using low temperature scanning tunneling microscopy (STM), we investigate band-bending effects of localized charge traps at Ge(001) surface at 78 K. For this investigation, we prepared nearly defect-free Ge(001) surface by keeping the background pressure to < $1{\times}10^{-10}$ mbar during outgassing. Ge(001) surfaces this obtained exhibit a flat-band condition, and deposition of charge traps induce a distinct, sharp boundary between pinned and depinned surface area in the constant current mode STM images. We will show the tip-surface interaction plays an essential role in producing the boundary, and discuss about the conditions that enable the pinning effect.

• 정보저장시스템학회:학술대회논문집
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• 2005.10a
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• pp.53-55
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• 2005

The surface potential variations are measured, according to the enhanced measuring speed and voltage sensitivity, using an active device, such as a field effect transistor $(FET)^{1-3}$. In this study, the surface potential was mapped in the patterned $SiO_2$ medium at room temperature. An improved FET-tip cantilever, which has a source, a drain, and an n- channel, was used in this study. The potential images were analyzed both in the contact mode and the non-contact mode, using only a pre-amplifier system instead of a lock-in the amplifier.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.141-142
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• 2000

In order to improve electron field emission and its stability, tip surface of amorphous silicon field emitters have been coated with molybdenum layer with a thickness of 25 nm through the gate opening and annealed rapidly in inert ambient. Compared with amorphous silicon field emitters, Mo silicidized amorphous silicon field emitters exhibited lower turn on voltage about 9 V, 3.8 times higher maximum current, 3.1 times lower fluctuation range and less change of the emission current depending on the vacuum level.

• Current Optics and Photonics
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• v.2 no.4
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• pp.361-367
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• 2018

Ultrafast deep-ultraviolet (DUV) pulse generation from the subwavelength aperture of a plasmonic waveguide was investigated. The plasmonic nanofocusing of near-infrared (NIR) pulses was exploited to enhance DUV photoemission of surface third harmonic generation (STHG) at the amorphous $SiO_2$ dielectric. The generated DUV pulses which are successfully made from a nano-aperture using 10 fs NIR pulses have a spectral bandwidth of 13 nm at a carrier wavelength of 266 nm. This method is applicable for tip-based ultrafast UV laser spectroscopy of nanostructures or biomolecules

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.2
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• pp.212-216
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• 2004

In this paper, we have fabricated a triode field emitter using carbon nanotubes (CNTs) directly grown by thermal chemical vapor deposition(CVD) method as an electron omission source. Vertically aligned CNTs have been grown in the center of the gate hole, to the size of 1.5 ${\mu}{\textrm}{m}$ in diameter, with help of a sacrificial layer of a type generally used in metal tip process. By the method of tilling the substrate, we made CNTs emitters both with and without SiO$_2$layer, a sidewall protector, deposited on sidewall of gate. After that we researched the electrical characteristics about two types of emitters. In effect, a sidewall protector can enhance the electrical characteristics by suppressing the problem of short circuits between the gate and the CNTs. The leakage current of an emitter with a sidewall protector is approximately sevenfold lower than that of an emitter without it at a gate voltage of 100 V.