• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.7
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• pp.30-36
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• 1997

Bump bonded piezoesistive silicon accelerometer was fabricated by the porous silicon micromachining and th eprocess technique of integrated circuit. The output voltage of the accelerometer fabricated on (111)-oreiented Si substrates with n/n$^{+}$n triple layers showed good linear characteristic of less than 1%. The measured sensitivity and the resonant frequency was about 743 .mu.V/g and 2.04 kHz, respectively. And the transverse sensitivity of 5.2% was measured from the accelerometer. Also, to investigate an influence on the output characteristics of the sensor due to bump bonding, the values of the piezoresistors were measured through thermal-cycling test in the temperature variation form -50 to 120.deg. C. Then, there was 0.014% resistance changes about 3.61 k.ohm., so sthe output charcteristics of the sensor was less affected by bump bonding.g.

• Proceedings of the KIEE Conference
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• 1995.11a
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• pp.609-611
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• 1995

In this study, we experimented the properties of SOG film as sacrificials layers in surface micromachining and made $SiO_2$ films through spin, bake, cure process. When we culled SOG films once, SOG film thickness is 1000 $\sim$ 3000 ${\AA}$. Then we coaled 200-${\AA}$ SOG film on 9000 ${\AA}$-CVD oxide and then we fabricated test structure, cantilever and ring/beam structure. We estimated deformed structure by SEM. As the results, The deformation of the structure layer in the SOG-coated sacrificial layers is small compared with that or the structure layer on CVD oxide or PSG. In the future, we use multi coated SOG films, SOG film become adequate material as sacrificial layer.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.2023-2025
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• 2002

We have fabricated a novel vertical trench-Hall device sensitive to the magnetic field parallel to the sensor chip surface. The vertical trench-Hall device is built on SOI wafer which is produced by silicon direct bonding technology using bulk micromachining, where buried $SiO_2$ layer and surround trench define active device volume. Sensitivity up to 350 V/AT is measured.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.3
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• pp.367-374
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• 2016

This paper presents an electro-thermal modeling of an amorphous silicon (a-Si) uncooled microbolometer. This modeling provides a comprehensive solution for simulating the electro-thermal characteristics of the fabricated microbolometer and enables electro-thermal co-simulation between MEMS and CMOS integrated circuits. To validate this model, three types of uncooled microbolometers were fabricated using a post-CMOS surface micromachining process. The simulation results show a maximum discrepancy of 2.6% relative to the experimental results.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.8
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• pp.620-627
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• 1998

For chemical microsensors such as humidity and gas sensors, it is essential to obtain a single pore with a large inner surface and straight structure. In this paper, cylindrical macroporous silicon layers have been formed of p-silicon substrate by anodization in HF-ethanol-water solution with an applied current. The pores grew normal to the (100) surface and were uniformly distributed. The pore diameter was approximately $1.5~2{\mu}m$ with a depth of $20~30{\mu}m$ and the pores were not interconnected, which are in sharp contrast to the porous silicon reported previouly for similarly doped p-Si. Porous silicon diaphragms 18 to $200{\mu}m$ thick were formed by anistropic etching in TMAH solution and then anodization. The fabrication of macroporous silicon and free-standing diaphragms is expected to offer applications for microsensors, micromachining, and separators.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.411-414
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• 1998

In this paper, the silicon-nitride membrane structure for IR sensor was fabricated through the etching and the direct bonding. The PT layer as a IR detection layer was deposited on the membrane and its characteristics were measured. The attack of PT layer during the etching of silicon wafer as well as the thermal isolation of the IR detection layer can be solved through the method of bonding/etching of silicon wafer. Because the PT layer of c-axial orientation rained thermal polarization without polling, the more integration capability can be achieved. The surface roughness of the membrane was measured by AFM, the micro voids and the non-contacted area were inspected by IR detector, and the bonding interface was observed by SEM. The polarization characteristics and the dielectric characteristics of the PT layer were measured, too.

• Proceedings of the KIEE Conference
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• 1998.07g
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• pp.2556-2558
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• 1998

2-D microwell arrays for micro ELISA (Enzyme-Linked Immuno Solvent Assay) system were fabricated using micromachining technology. The materials for the bottom plate, top plate and sidewall of the microwell were used a #7740 glass, gold and silicon respectively considering bio-compatibility and easy fabrication. Cylindrical or groove shape microwells, which have about $100{\mu}m$ depth and $50{\sim}500{\mu}m$ diameter or width, were arrayed. The fabricated microwell array can be applied to the essential part of a biochip when surface modification is made to immobilize cells or biomolecules on the microwell bottom.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.10
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• pp.815-819
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• 1998

The silicon-nirtide membrane structure for IR sensor was fabricated through the etching and the direct bonding. The PRO($PbTiO_3$ ) layer for a IR detection was coated on the membrane and its characteristics were measured. The a attack of PTO layer during the etching of silicon wafer as well as the thermal isolation of the IR detection layer were eliminated through the method of bonding/etching of silicon wafer. The surface roughness of the membrane was measured by AFM, the micro voids and the non-contacted area were inspected by the PTO layer were measured, too.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.10
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• pp.583-588
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• 2000

This paper presents the design and fabrication of micro electromagnetic vibration silicon elastic body characterized with small size, high efficiency and selective frequency bandwidth for Bio-MENS applications, such as implantable middle ear hearing aid. The presented electromagnetic vibration transducer that composed of wounded coil, permanent magnet and 4-beam cross type elastic body is fabricated by using of micromachining technology. The fabricated transducer has experimental characteristics, that is 5 nm/mA of an energy trasfer rate at the frequency range of 100∼2800 Hz. It has a size of $2{\times}2{\times}2.5\;mm^3$.

• Proceedings of the KIEE Conference
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• 2002.11a
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• pp.251-253
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• 2002

We have fabricated a novel Vertical Trench Hall-Effect Device sensitive to the magnetic field parallel to the sensor chip surface for non-contact angular position sensing applications. The Vertical Trench Hall-Effect Device is built on SOI wafer which is produced by silicon direct bonding technology using bulk micromachining, where buried $SiO_2$ layer and surround trench define active device volume. Sensitivity up to 150 V/AT is measured.