• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.156-159
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• 2002

Film Bulk Acoustic wave Resonator (FBAR) using thin piezoelectric films can be fabricated as monolithic integrated devices with compatibility to semiconductor process, leading to small size, low cost and high Q RF circuit elements with wide applications in communications area. This paper presents a MMIC compatible Suspended FBAR using surface micromachining. It is possible to make Si$_3$N$_4$/SiO$_2$/Si$_3$N$_4$membrane by using surface micromachining and its good effect is to remove the substrate silicon loss. FBAR was made on 2$\mu\textrm{m}$ multi-layered membrane using CVD process. According to our result, Fabricated film bulk acoustic wave resonator has two adventages. First, in the respect of device Process, our Process of the resonator using surface micromachining is very simple better than that of resonator using bull micromachining. Second, because of using the multiple layer, thermal expansion coefficient is compensated, so, the stress of thin film is reduced.

• Transactions of the Society of Information Storage Systems
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• v.1 no.2
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• pp.175-181
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• 2005

SiOB is an essential part of slim optical pickup, where the silicon mirror, LD stand, silicon PD are integrated and LD is flip chip bonded. SiOB is fabricated with bulk micromachining. Especially the fabrication of silicon wafer with stepped concave areas has many extraordinary difficulties. As a matter of fact, experiences and knowledges are rare in the fabrication of the highly stepped silicon wafer. The difficulties occurring in the integration of PD and SiOB, and highly stepped patterning, and silicon mirror roughness and how-to-solve will be discussed.

• Journal of the Korean Society for Precision Engineering
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• v.23 no.2 s.179
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• pp.146-153
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• 2006

Acceleration sensors have widely been used in the various fields of industry. In recent years, micromachining accelerometers have been developed and commercialized by the micromachining technique or MEMS technique. Typical structure of such sensors consist of a cantilever beam and a vibrating mass fabricated on Si wafers using etching. This study investigates the feasibility of powder blasting technique for microfabrication of sensor structures made of the pyrex glass alternating the existing Si based acceleration sensor. First, as preliminary experiment, effect of blasting pressure, mass flow rate of abrasive and no. of nozzle scanning on erosion depth of pyrex and soda lime glass is studied. Then the optimal blasting conditions are chosen for pyrex sensor. Structure dimensions of designed glass sensor are 2.9mm and 0.7mm for the cantilever beam length and width and 1.7mm for the side of square mass. Mask material is from aluminium sheet of 0.5mm in thickness. Machining results showed that tolerance errors of basic dimensions of glass sensor ranged from 3um in minimum to 20um in maximum. This results imply the powder blasting can be applied for micromachining of glass acceleration sensors alternating the exiting Si based sensors.

• Laser Solutions
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• v.11 no.1
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• pp.12-18
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• 2008

Laser micromachining is a promising technique to fabricate the micro-scale devices. However, there remains important challenges to reducethe redeposition of ablated materials around the laser irradiated zone and to get a smooth surface, especially for metal and semiconductor materials. To achieve the high-quality micromachined devices, various methods have been developed. Liquid-assisted micromachining can be a good solution to overcome the previously mentioned problems. During the laser ablation process, the liquid around the solid sample dramatically changes the ablation characteristics, such as ablation rate, surface profile, formation of debris, and so on. In this investigation, we conducted the laser micromachining of Si in various liquid environmental conditions, such as liquid types, liquid thickness. In addition, using nanoscale time-resolved shadowgraphy technique, we observed the ablation process in liquid environments to understand the mechanism of liquid-assisted laser micromachining.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1996.11a
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• pp.725-730
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• 1996

The key process in silicon surface micromachining is the selective etching of a sacrificial layer to release the silicon microstructure. The newly developed anhydrous HF/$CH_3$OH gas phase etching of TEOS (teraethylorthosilicate) sacrificial layers onto the polysilicon and the nitride substrates was employed to release the polysilicon microstructures. A residual product after TEOS etching onto the nitride substrate was observed on the surface, since a SiOxNy layer is formed on the TEOS/nitride interface. The polysilicon microstructures are stuck to the underlying substrate because SiOxNy layer does not vaporize. We found that the only sacrificial etching without any residual product and stiction is TEOS etching onto the polysilicon substrate.

• Journal of the Microelectronics and Packaging Society
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• v.6 no.1
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• pp.81-89
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• 1999

The fabrication process for miniaturizing the Electronic Article Surveillance (EAS) sensor was studied using micromachining technique. Two types of sensor structure, free standing membrane type and diving beard type, were proposed and researched for establishing the fabrication process. The membrane type structure was easy to change the sensor shape but had the limitation for miniaturizing, because the size of the sensor depends on the silicon substrate thickness. The diving board type structure has the advantage of miniaturization and of free motion. Since the elastic modulus is not trio high, SiN film is expected to be adequate for the supporting membrane of magnetic sensor. The selectivity of $H_2O_2$for sputtered W with respect to Fe-B-Si, which was studded for magnetic sensor materials, was high enough to be removed after using as a protection layer. Therefore, the diving board type process using the silicon nitride film for the supporter of the sensor material and the sputtered W for protection layer is expected to be useful fur miniaturizing the Electronic Article Surveillance (EAS) sensor.

• Journal of Sensor Science and Technology
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• v.5 no.1
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• pp.71-77
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• 1996

Considering that polycrystalline silicon, a structural material of the micromachining, is affected by a sacrificial oxide layer, the poly-oxide obtained by the thermal oxidation of polycrystalline silicon is newly proposed and estimated as the sacrificial oxide layer. The grain size of the polycrystalline silicon grown on the poly-oxide is larger than that of poly crystalline silicon grown on the conventional sacrificial oxide layer. As a result of XRD, increase of (111) textures and formation of additional (220) textures are observed on the polycrystaIline silicon deposited on the poly-oxide. Also, the polycrystalline silicon grown on the poly-oxide represents small and uniform stress.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.11
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• pp.958-962
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• 2002

This paper reports on the fabrication of free-standing microstructures by DRIE (deep reactive ion etching). SOI (Si-on-insulator) structures with buried cavities are fabricated by SDB (Si-wafer direct bonding) technology and electrochemical etch-stop. The cavity was formed the upper handling wafer by Si anisotropic etch technique. SDB process was performed to seal the formed cavity under vacuum condition at -760 mmHg. In the SDB process, captured air and moisture inside of the cavities were removed by making channels towards outside. After annealing (100$0^{\circ}C$, 60 min.), the SDB SOI structure with a accurate thickness and a good roughness was thinned by electrochemical etch-stop in TMAH solution. Finally, it was fabricated free-standing microstructures by DRIE. This result indicates that the fabrication technology of free-standing microstructures by combination SDB, electrochemical etch-stop and DRIE provides a powerful and versatile alternative process for high-performance bulk micromachining in MEMS fields.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.6
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• pp.303-306
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• 2001

STFR were fabricated on the floating membrane which was formed by SOI-micromachining process. The floating membranes having a thickness range of $3{\sim}15{\mu}m$ could be simply formed by micromachining the directly-bonded and thinned SOI substrate. The STFR device fabricated on the $15{\mu}m$-thick membrane showed resonance frequency of fr = 1.65 GHz, coupling coefficient of Keff2 = 2.4 %, and series and parallel quality factors of Qs = 91.7 and Qp = 87.7, respectively.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.12
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• pp.597-600
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• 2002

Film Bulk Acoustic wave Resonator (FBAR) using thin piezoelectric films can be made as monolithic integrated devices with compatibility to semiconductor process, leading to small size and low cost, high Q RF circuit elements with wide applications in communications area. This paper presents a MMIC compatible suspended FBAR using surface micromachining. Membrane is composed $Si_3N_4SiO_2Si _3N_4$ multi layer and air gap is about 50${\mu}{\textrm}{m}$. Firstly, We perform one dimensional simulation applying transmission line theorem to verify resonance characteristic of the FBAR. Process of the FBAR is used MEMS technology. Fabricated FBAR resonate at 2.4GHz, $K^2_{eff}$ and Q are 4.1% and 1100.