• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2001.11a
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• pp.138-140
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• 2001

Fluxless flip chip bonding using plasma & ultrasonic wave was investigated in order to evaluate the effect of plasma & ultrasonic treatment on the bondability of the Sn-3.5wt%Ag solder bumped die to TSM-coated glass substrate. The $Ar+10%H_2plasma$ was effective in removing tin oxide on solder surface. The die shear strength of the plasma-treated Si-chip is higher than that of non-treated specimen but lower than that of specimen bonded with flux. The die shear strength with the bonding load at 25W ultrasonic power increased to 0.8N/bump for all bonding temperature but decreased above 1.0N/bump.

• Journal of the Korean Ceramic Society
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• v.37 no.12
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• pp.1204-1211
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• 2000

Mn-Zn 페라이트 소결체와 SiO$_2$-PbO-ZnO 삼성분계 유리와의 계면반응에서 페라이트와 유리에 각각 첨가된 ZnO가 계면반응에 미치는 영향을 조사하였다. SiO$_2$-PbO-ZnO 삼성분계 유리에 첨가된 ZnO 함량이 낮은 경우 페라이트와의 접합계면에서 생성되는 중간상은 Pb$_2$(Mn,Fe)$_2$Si$_2$O$_{9}$와 Pb$_{8}$(Mn,Fe)Si$_{6}$O$_{21}$의 고용체였으며, ZnO 농도가 증가함에 따라 중간상은 사라졌다. 유리속의 ZnO 성분이 증가함에 따라 페라이트 소결체 쪽의 계면부근에 Zn의 농도가 증가하는 특이한 분포가 나타났다. 이는 유리 속에 첨가된 Zn 이온의 높은 활동도로 인해 페라이트에 포함된 Zn 이온의 용해반응이 선택적으로 억제되어 나타난 것으로 생각된다. 페라이트에 첨가된 ZnO 함량이 낮은 경우 SiO$_2$-PbO 이성분계 유리와의 접합계면에서 페라이트의 용해에 따른 침식과 입계를 통한 유리의 침투가 심하게 일어났으며, ZnO 함량이 증가함에 따라 계면을 통한 상호확산과 반응이 억제되었다.

• Proceedings of the Korean Society for Emotion and Sensibility Conference
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• 2001.05a
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• pp.147-155
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• 2001

Nasucon lamp and Russian ones, which are coated with some special materials on the glass bulb, gave good clinical results for a cancer therapy. They are experimentally studied with Automatic Bioelectric Response Recorder on the six placements of the electrodes (two feet, two hands and two foreheads). They reduced the current rather than the control (natural) state. However infrared lamp and Chinese God light did not reduced the value current. Hemoglobin in blood. Brown gas, Ti$_3$SiC$_2$ and Nasucon have planar crystallizing $\pi$-bonding bonding layer and covalent bonding one in sequence commonly and thus the alternating magnetic fields are protected. Nasucon lamp and Russian ones utilized electric bulbs in order to generate alternating magnetic fields and to produce absorbing force.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1920-1922
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• 2003

We have fabricated the pyrex glass microlens using thermal reflow process. Fabricated microlens is the plano convex refractive type and was fabricated with pyrex glass-Si anodic bonding wafer. The etched circle or cylindrical pyrex glass pattern was melted in a furnace $800^{\circ}C$ to $900^{\circ}C$ for about 15min. The surface roughness of the microlenses was measured by the AFM and average surface roughness of the microlenses was below 15min. The radius of curvature of the microlens was measured with phase shift interferometer.

• Journal of the Microelectronics and Packaging Society
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• v.13 no.2 s.39
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• pp.21-26
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• 2006

We developed a bonding at low temperature using fine pitch Sn and In bumps, and studied the reliability of the fine pitch In-Sn solder joints. The $30{\mu}m$ pitch Sn and In bumps were joined together at $120^{\circ}C$. A non conductive adhesive (NCA) was applied during solder joining. Thermal cycling test ($0^{\circ}C-100^{\circ}C$, 2 cycles/h) of up to 2000 cycles was carried out to evaluate the reliability of the solder joints. The bondability was evaluated by measuring the contact resistance (Rc) of the joints through the four point probe method. As the content of filler increased, the reliability improved in the solder joints during thermal cycling test because the contact resistance increased little. The filler redistributed the stress and strains from the thermal shock over the entire joint area.

• Journal of the Korean Applied Science and Technology
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• v.41 no.1
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• pp.46-57
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• 2024

In this study, the various process conditions for high-power DC Magnetron Sputtering (DCMS) on the surface roughness of carbon thin films were investigated. The optimal conditions for Si/C coating were 40min for deposition time, which does not deviate from normal plasma, to obtain the maximum deposition rate, and the conditions for the best surface roughness were -16volt bias voltage and 400watt DC power with 1.3x10-3torr chamber pressure. Under these optimal conditions, an excellent carbon thin film with a surface roughness of 1.62nm and a thickness of 724nm was obtained. As a result of XPS analysis, it was confirmed that the GLC structure (sp² bonding) was more dominant than the DLC structure (sp³ bonding) in the thin film structure of the carbon composite layer formed by DC sputtering. Except in infrequent cases of relatively plasma instability, the lower bias voltage and applied power induces smaller surface roughness value due to the cooling effect and particle densification. For the optimal conditions for Graphite/C composite layer coating, a roughness of 36.3 nm and a thickness of 711 nm was obtained under the same conditions of the optimal process conditions for Si/C coating. This layer showed a immensely low roughness value compared to the roughness of bare graphite of 242 nm which verifies that carbon coating using DC sputtering is highly effective in modifying the surface of graphite molds for glass forming.

• Journal of the Korean Ceramic Society
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• v.43 no.6 s.289
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• pp.327-332
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• 2006

The effect of the processing parameters on the sintered density and strength of silica-bonded SiC (SBSC) ceramics was investigated for three types of batches with different particle sizes. The SBSC ceramics were fabricated by an oxidation-bonding process. The process involves the sintering of powder compacts in air so that the SiC particles bond to each other by oxidation-derived $SiO_2$ glass or cristobalite. A finding of this study was that a higher flexural strength was obtained when the starting powder was smaller. When a ${\sim}0.3_{-{\mu}m}$ SiC powder was used as a starting powder, a high strength of $257{\pm}42\;MPa$ was achieved at a relative density of ${\sim}80%$.

• Journal of the Korean Society for Precision Engineering
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• v.22 no.11 s.176
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• pp.165-172
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• 2005

In MEMS (Micro-Electro-Mechanical System), packaging induced stress or stress induced structure deformation becomes increasing concerns since it directly affects the performance of the device. In the decoupled vibratory MEMS gyroscope, the main factor that determines the yield rate is the frequency difference between the sensing and driving modes. The gyroscope, packaged using the anodic bonding at the wafer level and EMC (epoxy molding compound) molding, has a deformation of MEMS structure caused by thermal expansion mismatch. This effect results in large distribution in the frequency difference, and thereby a lower yield rate. To improve the yield rate we propose a packaged SiOG (Silicon On Glass) process technology. It uses a silicon wafer and two glass wafers to minimize the wafer warpage. Thus the warpage of the wafer is greatly reduced and the frequency difference is more uniformly distributed. In addition. in order to increase robustness of the structure against deformation caused by EMC molding, a 'crab-leg' type spring is replaced with a semi-folded spring. The results show that the frequency shift is greatly reduced after applying the semi-folded spring. Therefore we can achieve a more robust vibratory MEMS gyroscope with a higher yield rate.

• Proceedings of the KSME Conference
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• 2004.11a
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• pp.1196-1200
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• 2004

Micropump is very useful component in micro/nano fluidics and bioMEMS applications. In this study, a bubble-powered micropump was fabricated and tested. The micropump consists of two-parallel micro line heaters, a pair of nozzle-diffuser flow controller and a 1 mm in diameter, 400 ${\mu}m$ in depth pumping chamber. The two-parallel micro line heaters with 20 ${\mu}m-width$ and 200 ${\mu}m-length$ were fabricated to be embedded in the silicon dioxide layer of a wafer which serves as a base plate for the micropump. The pumping chamber, the pair of nozzle-diffuser unit and microchannels including the liquid inlet and outlet port were fabricated by etching through another silicon wafer. A glass wafer (thickness of $525{\pm}15$ ${\mu}m$) having two holes of inlet and outlet ports of liquid serve as upper plate of the pump. Finally the silicon wafer of the base plate, the silicon wafer of pumping chamber and the glass wafer were aligned and bonded (Si-Si bonding and anodic bonding). A sequential photograph of bubble nucleation, growth and collapse was visualized by CCD camera. Clearly liquid flow through the nozzle during the period of bubble growth and slight back flow of liquid at the end of collapsing period can be seen. The mass flow rate was found to be dependent on the duty ratio and the operation frequency. As duty ratio increases, flow rate decreases gradually when the duty ratio exceeds 60%. Also as the operation frequency increases, the flow rate of the micropump decreases slightly.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.5
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• pp.1029-1034
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• 2012

This paper presents a cost-effective and high-performance film bulk acoustic resonator (FBAR) duplexer module for US-PCS handset applications. The FBAR device uses a glass wafer level packaging process, which is a more cost-effective alternative to the typical silicon capping process. The maximum insertion losses of the FBAR duplexer at the Tx and Rx bands are of 1.9 and 2.4 dB, respectively. The total thickness of the duplexer module is 1.2 mm, including the glass-wafer bonded Tx/Rx FBAR devices, PCB board, and transfer molding material.