• Journal of the Korean Ceramic Society
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• v.25 no.5
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• pp.561-569
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• 1988

Mixtures of very small amounts of additive, carbon and silica(about 0.46${\mu}{\textrm}{m}$) which synthesized by the hydrolysis of ethyl silicate, the molar ratio of SiO2/C was fixed to 1/10, was nitrided at 145$0^{\circ}C$. It was considered that the optimum amount of additive to promote the nitridation reaction was below 2.0wt%. By the addition of additive, the nitridation reaction was promoted and formation of $\beta$-Si3N4 was promoted at 145$0^{\circ}C$ for 1hour, but, the nitridation reaction was decreased and the ratio of $\alpha$/$\beta$ of Si3N4, was increased at 145$0^{\circ}C$ for 5 hours. The crystal phase was $\alpha$ phase and the nitridation reaction was promoted and the particle size of silicon nitride was become smaller by the addition of $\alpha$-Si3N4, but silicon nitride of whisker-like form was produced by the addition of transition elements. There was a difference in the lattice constants of $\alpha$-Si3N4, but no difference in its of $\beta$-Si3N4 according to kinds of added substance and reaction time.

• Journal of Korea Foundry Society
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• v.30 no.5
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• pp.161-166
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• 2010

In this examination, the effect of Sr addition and holding time on microstructure of Al-10.5wt%Si-2wt%Cu secondary die-casting alloy was investigated. Degree of undercooling was improved with increasing the Sr content in this alloy. Up to 0.02wt%Sr addition, acicular and lamellar eutectic structure was observed in the microstructure. Meanwhile, the eutectic Si was modified toward the fine fibrous form by increasing Sr content with more than 0.03wt% and holding time of the melt. The well- modified alloys showed decreased eutectic silicon size from 3.25 ${\mu}m$ to less than 0.8 ${\mu}m$. From these results, the optimal strontium content and holding time were identified on the Al-10.5wt%Si-2wt%Cu secondary die-casting alloy.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.2
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• pp.80-86
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• 2002

$Al_{2}O_{3}/SiC$ nanocomposites were made by infiltrating partially sintered alumina bodies with polycarbosilane (PCS) solutions, which is a SiC polymer precursor, with pressureless sintering. The SiC content, densification, phases, strength, and microstructure were investigated with the processing parameters such as PCS solution concentration and heat treatment condition for PCS pyrolysis and sintering. The results were compared with those for pure alumina and nanocomposite samples made by the existing polymer precursor route (i.e. the PCS addition process). The SiC contents of up to 1.5 vol% were obtained by the PCS infiltration. PCS pyrolysis, followed by air heat treatment, was needed before sintering to avoid a cracking problem and to attain a densification as high as 98 % of theoretical. The nanocomposites exhibited significantly higher strength than pure alumina and those prepared by the PCS addition process despite larger grain size. Besides $\alpha-Al_{2}O_{3}/SiC$ and $\beta-SiC$ phases, mullite was present a little in the nanocomposites, which resulted from the reaction of $SiO_{2}$ in the pyrolysis product of PCS with the $Al_{2}O_{3}$ matrix during sintering. The nanocomposites had intagranular particles believed to be SiC, which is a typical feature of $Al_{2}O_{3}/SiC$ nanocomposites.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.892-895
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• 2003

This paper describes on RIE(Reactive Ion Etching) characteristics of 3C-SiC(Silicon Carbide) grown on Si(100) wafers. During RIE of 3C-SiC films in this work, $CHF_3$ gas is used to form of polymer as a side wall for excellent anisotropy etching. From this process, etch rates are obtained a $60{\sim}980{\AA}/min$ by various conditions such as $CHF_3$ gas flux, $O_2$ addition ratio, RF power and electrode distance. Also, approximately $40^{\circ}$ mesa structures are successfully formed at 100 mTorr $CHF_3$ gas flow ratio, 200 W RF power and 30 mm electrode distance. Moreover, vertical side wall is fabricated by anisotropy etching with 50% $O_2$ addition ratio and 25 mm electrode distance. Therefore, RIE of 3C-SiC films using $CHF_3$ could be applicable as fabrication process technology for high-temperature 3C-SiC MEMS applications.

• Journal of the Korean Ceramic Society
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• v.30 no.1
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• pp.46-54
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• 1993

$\beta$-SiC was chemically vapor deposited by pyrolysis of MTS＋H2 gas mixture. The experiments were conducted in the temperature range of 1100~150$0^{\circ}C$ with a r.f. induction furnace under atmospheric pressure. The IR, XRD, EDS and AES analysis revealed that the free Si was always codeposited with SiC below 140$0^{\circ}C$, regardless of the total flow rate and MTS concentration, whereas $\beta$-SiC single phase was deposited at 150$0^{\circ}C$. C3H8 or CH2Cl2 as an excess C sources, was supplied with MTS in order to obtain stoichiometric SiC at low temperature. With the addition of C3H8 or CH2Cl2, the deposition rate was increased and $\beta$-SiC single phase could be deposited even at temperature as low as 110$0^{\circ}C$. In the absence of C3H8 or CH2Cl2, the microhardness of the layer was quite low (

• Journal of the Korean Ceramic Society
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• v.27 no.5
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• pp.583-588
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• 1990

Glass films in the binary system B2O3-SiO2 and Al2O3-SiO2 were prepared on soda-lime-silica slide glass by the dip-coating technique from TEOS and boric acid or aluminum nitrate. Thickness of the films varying with viscosity and withdrawal speed were measured and effect of composition and firing temperature on the properties such as transmittance and refractive index were investigated. nM2O3.(100-n)SiO2(M=B or Al) films containing up to 20mol% B2O3 and 40mol% Al2O3 were transparent. Maximum transmittance at visible range were obtained for the sample containing 15mol% Ba2O3 and 32.5mol% Al2O3 and heat-treated at 50$0^{\circ}C$, respectively. Refractive index of the film containing 15mol% B2O3 was mininum in the B2O3-SiO2 binary system and minimal refractive index was appeared at the film containing 32.5mol% Al2O3. In IP spectra, addition of B2O3 were increased absorption peak intensity of B-O and Si-O-B bond and addition of Al2O3 were decreased absorption peak intensity of Si-O bond, respectively.

• Journal of the Korean Ceramic Society
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• v.26 no.3
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• pp.416-422
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• 1989

The particle size of synthesized SiC powders was decreased with increasing carbon content when the mixture of carbon and silica was carbonized at 1, 45$0^{\circ}C$ after hydrolysis of the mixture with the ranges of 3.1 to 3.5 in the mole ratio of Carbon/Alkoxide. The reacted fraction of $\beta$-SiC nearly had nothing to do with the mole ratio of Carbon/Alkoxide. When the reaction was made by adding 0.5wt% additives in the composition of 3.1 in the mole ratio of carbon/alkoxide, the additives decreased the yield of $\beta$-SiC and its sequence was Ba2O3>B>Fe>Al>Al2O3>Si. The effect of additives promoted the transformation of $\beta$-SiC to $\alpha$-SiC form and shwoed the increasing tendency of lattice constant. The two colors of $\beta$-SiC powder came out : one was the black grey with addition of Al, Al2O3 and B the other the light grey with addition of Fe, B2O3 and Si.

• Korean Journal of Metals and Materials
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• v.46 no.5
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• pp.304-309
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• 2008

Magnesium alloys containing $Mg_2Si$ particles, as a promising cheap heat-resistant magnesium alloy for automobile power train parts applications, are attracting more attention of both material scientists and design engineers. Modification of the Chinese script shape $Mg_2Si$ particle is a key for using this alloy in sand or permanent mould casting. In the present work, the modification effect of Sr and Sb on the corrosion properties of the Mg-5Al-2Si alloy was investigated. Sr or Sb addition promoted the formation of fine polygonal shape $Mg_2Si$ particles by providing the nucleation sites. Sr was more effective element than Sb for shape modification of Chinese script shape $Mg_2Si$. Such improved microstructure of the modified alloy resulted in large improvement in corrosion resistance as compared to unmodified Mg-5Al-2Si alloy.

• Journal of the Korean Ceramic Society
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• v.50 no.3
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• pp.218-225
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• 2013

The densification behavior and strength of sintered reaction bonded silicon nitrides (SRBSN) that contain $Lu_2O_3-SiO_2$ additives were improved by the addition of fine Si powder. Dense specimens (relative density: 99.5%) were obtained by gas-pressure sintering (GPS) at $1850^{\circ}C$ through the addition of fine Si. In contrast, the densification of conventional specimens did not complete at $1950^{\circ}C$. The fine Si decreased the onset temperature of shrinkage and increased the shrinkage rate because the additive helped the compaction of green bodies and induced the formation of fine $Si_3N_4$ particles after nitridation and sintering at and above $1600^{\circ}C$. The amount of residual $SiO_2$ within the specimens was not strongly affected by adding fine Si powder because most of the $SiO_2$ layer that had formed on the fine Si particles decomposed during nitridation. The maximum strength and fracture toughness of the specimens were 991 MPa and $8.0MPa{\cdot}m^{1/2}$, respectively.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.298-301
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• 2000

We investigated the etch rate of SiO$_2$ in E-ICP, ICP system and the addition gas (O$_2$H$_2$) effect on SiO$_2$ etch characteristics. In all conditions, E-ICP shows higher etch rate than ICP. Small amount of O$_2$ addition increase F atom and O$\^$*/ concentration. at optimized condition (30％ O$_2$ in CF$_4$, 70Hz) E-ICP system shows highest etch rate (about 6000${\AA}$). H$_2$addition in CF$_4$ Plasma make abrupt decrease Si etch rate and moderate decrease SiO$_2$ etch rate.