Journal of the Korean Ceramic Society (한국세라믹학회지)

The Korean Ceramic Society (한국세라믹학회)
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Chemical Vapor Deposition of $\beta$-SiC by Pyrolysis of MTS and Effect of Excess C Sources

MTS의 열분해를 이용한 $\beta$-SiC의 화학증착 및 Excess C 공급원의 영향

  • 최병진 (경북대학교 공과대학 금속공학과) ;
  • 박병옥 (경북대학교 공과대학 무기재료공학과) ;
  • 김대룡 (경북대학교 공과대학 금속공학과)
  • Published : 1993.01.01
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Abstract

$\beta$-SiC was chemically vapor deposited by pyrolysis of MTS＋H2 gas mixture. The experiments were conducted in the temperature range of 1100~150$0^{\circ}C$ with a r.f. induction furnace under atmospheric pressure. The IR, XRD, EDS and AES analysis revealed that the free Si was always codeposited with SiC below 140$0^{\circ}C$, regardless of the total flow rate and MTS concentration, whereas $\beta$-SiC single phase was deposited at 150$0^{\circ}C$. C3H8 or CH2Cl2 as an excess C sources, was supplied with MTS in order to obtain stoichiometric SiC at low temperature. With the addition of C3H8 or CH2Cl2, the deposition rate was increased and $\beta$-SiC single phase could be deposited even at temperature as low as 110$0^{\circ}C$. In the absence of C3H8 or CH2Cl2, the microhardness of the layer was quite low (

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References

  1. J.Am.Ceram.Soc. v.54 no.12 Structure and Mechanical Properties of Codeposited Pyrolytic SiC Alloys J.I.Kaae;T.D.Gulden
  2. Ceram.Bull. v.58 no.9 Tensile-Strength Distribution for Silicon Nitride and Silicon Carbide Ceramics R.L.Jones;D.J.Rowcliffe
  3. Ceram.Bull. v.62 no.4 Tribological Properties of Sintered Polycrystalline and Single Crystal Silicon Carbides K.Miyoshi;D.H.Buckley;M.Srinivasan
  4. J.Am.Ceram.Soc. v.70 no.7 Thermal Expansion and Thermal Expansion Anisotropy of SiC Polytypes Z.Li;R.C.Bradt
  5. 工業材料 v.36 no.15 Sic セラミクス 中村浩介
  6. Ceram.Int. v.15 Oxidation Behavior of Silicon Carbide Under Cyclic and Static Condition M.Maeda;K.Nakamura;T.Ohkubo;T.Ishizuka
  7. J.Am.Ceram.Soc. v.72 no.8 High-Temperature Passive Oxidation of Chemically Vapor Deposited Silicon Carbide T.Narushima;T.Goto;T.Hirai
  8. Phys.Rev. v.B12 no.6 High-field Transport in Wide-Band-Gap Semiconductor D.K.Ferry
  9. J.Appl.Phys. v.43 no.4 Low Temperature Solid State Phase Transformation in 2H Silicon Carbide J.A.Powell;H.A.Will
  10. IEEE EDL v.7 no.7 Experimental 3C SIC MOSFET Y.Kondo;T.Takahashi;K.Ishii;Y.Hayashi;E.Sakuyama;S.Misawa;H.Daimon;M.Yamanaka;S.Yoshida
  11. Solid-State Electron. v.15 Preparation and Properties of Vapour Phase Epitaxial Silicon Carbide Diodes G.Gramberg;M.Koniger
  12. J.Electrochem.Soc. v.110 no.6 Photoluminescence of α-SiC A.Adamiano;R.M.Potter;V.Ozarow
  13. Philips Res.Rpts. v.18 no.3 Growth Phenomena in Silicon Carbide W.F.Knippenberg
  14. J.Mater.Sci. v.24 Reinforcement and Antioxidizing of Porous Carbon by Pulse CVI of SiC K.Sugiyama;E.Yamamoto
  15. 日本金屬學會誌 v.51 スバソタ 法による a-$Si_{1-\lambda}C_{\lambda} 專膜の構造 井上尙三;停崎嘉文;芳井態安;川邊秀昭
  16. J.Cryst.Growth. v.95 Atomic Layer Epitaxy of Cubic SiC by Gas Source MBE Using Surface Super Structure T.Fuyuki;M.Nakayama;T.Yoshinobu;H.Shiomi;H.Matsunami
  17. J.Cryst.Growth. v.24;25 Growth of Heteroepitaxial SiC Films by Pyrolysis of Various Alkyl-Silicon Compounds Y.Avigal;M.Schieber
  18. Nuclear Technol. v.32 no.2 In situ Regeneration of Fusion Reaction First Walls J.Chin;T.Ohkawa
  19. J.Am.Ceram.Soc. v.66 no.4 Thermodynamic Analysis,Kinetic Implications of Chemical Vapor Deposition of SiC from Si-C-CI-H Gas System G.S.Fischman;W.T.Petuskey
  20. J.Electrochem.Soc. v.138 no.3 A Model of Silicon Carbide Chemical Vapor Deposition M.D.Allendorf;R.J.Kee
  21. Silicon Carbide-1973 W.von Muench;K.Gillessen;J.W.Faust(ed.);H.M.Liaw(ed.)
  22. J.Electrochem.Soc. v.117 no.7 A Stagnant Layer Model for the Epitaxial Growth of Silicon from Silane in a Horizontal Reactor F.C.Eversteyn;P.J.Severin;V.D.Brekel;H.L.Peek
  23. J.Mater.Res. v.4 no.1 Growth Rate,Surface Morphology and Defect Microstructures of Beta-SiC Films Chemically Vapor Deposited on 6H SiC Substrates H.S.Kong;J.T.Glass;R.F.Davis
  24. Acta Metallurgica v.26 Aspects of One Dimensional Disorder in Silicon Carbide S.Shinozaki;K.R.Kinsman
  25. J.Appl.Phys. v.44 no.5 Infrared Spectrum of Interstitial Oxygen in Silicon M.Stavola