Journal of the Korean Ceramic Society (한국세라믹학회지)

The Korean Ceramic Society (한국세라믹학회)
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Characteristics of Gate Electrode for WSi2/CVD-Si/SiO2

WSi2/CVD-Si/SiO2 구조의 게이트 전극 특성

  • 박진성 (조선대학교 재료공학과) ;
  • 정동진 (삼성전자(주) 반도체부문 기반기술센터) ;
  • 이우성 (삼성전자(주) 반도체부문 기반기술센터) ;
  • 이예승 (삼성전자(주) 반도체부문 기반기술센터) ;
  • 문환구 (삼성전자(주) 반도체부문 기반기술센터) ;
  • 김영남 (삼성전자(주) 반도체부문 기반기술센터) ;
  • 손민영 (삼성전자(주) 반도체부문 기반기술센터) ;
  • 이현규 (조선대학교 재료공학과) ;
  • 강성철 (삼성전자(주) 반도체부문 기반기술센터)
  • Published : 1993.01.01
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Abstract

In the WSi2/CVD-Si/SiO2 polycide structure, electrode resistance and its property were studied as a function of deposition temperature and thickness of CVD-Si, diffusion condition of POCl3, and WSi2 being deposited or not. Resistivity of poly-Si is decreased with increment of thickness in the case of POCl3 diffusion of low sheet resistance, but it is increased in the case of high sheet resistance. The resistivity of amorphous-Si is generally lower than that of poly-Si. Initial sheet resistance of poly-Si/WSi2 gate electrode is affected by the thickness and resistance of poly-Si layer, but final resistance after anneal, 900$^{\circ}C$/30min/N2, is only determined by WSi2 layer. Flourine diffuses into SiO2, but tungsten does not. In spite of out-diffusion of phosphorus into WSi2 layer, the sheet resistance is not changed.

Keywords

References

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