Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
권호 표지

Oxide etching characteristics of Enhanced Inductively Coupled Plasma

E-ICP에 의한 산화막 식각특성

  • 조수범 (인하대학교 전자 전기 컴퓨터공학부) ;
  • 송호영 (인하대학교 전자 전기 컴퓨터공학부) ;
  • 박세근 (인하대학교 전자 전기 컴퓨터공학부) ;
  • 오범환 (인하대학교 전자 전기 컴퓨터공학부)
  • Published : 2000.06.01
Download PDF
⟨ Previous Next ⟩

Abstract

We investigated the etch rate of SiO$_2$ in E-ICP, ICP system and the addition gas (O$_2$H$_2$) effect on SiO$_2$ etch characteristics. In all conditions, E-ICP shows higher etch rate than ICP. Small amount of O$_2$ addition increase F atom and O$\^$*/ concentration. at optimized condition (30％ O$_2$ in CF$_4$, 70Hz) E-ICP system shows highest etch rate (about 6000${\AA}$). H$_2$addition in CF$_4$ Plasma make abrupt decrease Si etch rate and moderate decrease SiO$_2$ etch rate.

Keywords