Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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A Study on Characteristics of Boron Phosphide Deposited at Low Temperature Using CVD Method

화학 기상 증착법으로 저온 증착한 보론 포스파이드의 특성에 관한 연구

  • 윤여철 (서울시립대학교 전자전기공학부) ;
  • 김순영 (서울시립대학교 전자전기공학부) ;
  • 박윤권 (서울시립대학교 전자전기공학부) ;
  • 강재경 (LG정보통신 네트워크연구소) ;
  • 김철주 (서울시립대학교 전자전기공학부)
  • Published : 2000.06.01
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Abstract

Boron Phosphide films were deposited on the glass substrate at low temperature, 550$^{\circ}C$, by the reaction of B$_2$H$\sub$6/ with PH$_3$ using CVD. N$_2$ was employed as carrier gas. The deposition rate was 1000${\AA}$/min and the refractive index of film was 2.6. The data of XRD show that the film has the preferred orientation of (1 0 1). The VIS spectrophotometer's data proved that the films are transparent in the visible range. Also, we performed AFM, FT-IR measurement. To investigate the annealing effect, the samples were annealed for 1hour, 3hours at 550$^{\circ}C$ and tested.

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