• Journal of the Korean Vacuum Society
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• v.11 no.1
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• pp.16-21
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• 2002

Selective epitaxial growth(SEG) of silicon were performed at low temperature under an ultraclean environment below $1000^{\circ}C$ using ultraclean $Si_2H_6$ and $H_2$ gases ambient in low pressure chemical vapor deposition(LPCVD). As a result of ultraclean processing, epitaxial Si layers with good quality were obtained for uniform and SEG wafer at temperatures range 600~$710^{\circ}C$ and an incubation period of Si deposition only on $SiO_2$ was found. Low-temperature Si selectivity deposition condition and epitaxy on Si were achieved without addition of HCl. The epitaxial layer was found to be thicker than the poly layer deposited over the oxide. Incubation period prolonged for 20~30 sec can be obtained by $O_2$addition. The surface morphologies & cross sections of the deposited films were observed with SEM, The structure of the Si films was evaluated XRD.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.1
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• pp.15-21
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• 2008

SiC has an excellent resistance to oxidation and corrosion, high temperature strength and good thermal conductivity. However, it is difficult to density because of its highly covalent bonding characteristics. Hot-press sintering process was applied to fabricate fully densified SiC ceramics with carbon and boron addition as a sintering additive. The addition of carbon improved the mechanical properties of SiC because it could induce a fine and homogeneous microstructure by the suppression of abnormal growth of SiC grain. Also, the addition of carbon could control the phase transformation of SiC. The phase transformation of 6H to 4H increased with sintering temperature but the addition of carbon decreased that kind of phase transformation.

• Applied Microscopy
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• v.45 no.1
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• pp.32-36
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• 2015

The microstructural features of FeCoCrNi, FeCoCrNiAl and FeCoCrNiSix (x=0, 5, 10, 15, 20) alloys have been investigated in the present study. The microstructure of FeCoCrNi alloy changes dramatically with equiatomic addition of Al. The fcc irregular shaped grain structure in the as-cast FeCoCrNi alloy changes into the bcc interconnected structure with phase separation of Al-Ni rich and Cr-Fe rich phases in the as-cast FeCoCrNiAl alloy. The microstructure of FeCoCrNi alloy changes with the addition of Si. With increasing the amount of Si, the fcc structure of the grains is maintained, but new phase containing higher amount of Si forms at the grain boundary. As the amount of Si increases, the fraction the Si-rich grain boundary phase increases.

• Journal of Korea Foundry Society
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• v.25 no.5
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• pp.216-220
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• 2005

High ductility Al-Mg alloys often contain some Mn and Si, however the effects of these minor alloying elements on various properties of alloys have not been fully understood. In this study the castability and mechanical properties of Al-5%Mg alloy were investigated according to the addition of Mn and Si. The fluidity of the alloys was generally increased by increasing Si or Mn contents. The feedability was also increased by increasing Si content, but it was rather decreased by increasing Mn content. Both the tensile strength and the ductility appeared to be deteriorated by Si addition, while they were found to be improved by Mn addition.

• Korean Chemical Engineering Research
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• v.51 no.6
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• pp.755-759
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• 2013

The etch rate and etch profile of Si was investigated when Ar was added to an $SF_6$ plasma in the etch step of the Bosch process. A Si substrate was etched with the Bosch process using $SF_6$ and $SF_6$/Ar plasmas, respectively, in the etch step to analyze the effects of Ar addition on the etch characteristics of Si. When the Ar flow rate in the $SF_6$ plasma was increased, the etch rate of the Si substrate increased, had a maximum at 20% of the Ar flow rate, and then decreased. This was because the addition of Ar to the $SF_6$ plasma in the etch step of the Bosch process resulted in the bombardment of Ar ions on the Si substrate. This enhanced the chemical reactions (thus etch rates) between F radicals and Si as well as led to sputtering of Si particles. Consequently, the etch rate was higher more than 10% and the etch profile was more anisotropic when the Si substrate was etched with the Bosch process using a $SF_6$/Ar (20% of Ar flow rate) plasma during the etch step. This work revealed a feasibility to improve the etch rate and anisotropic etch profile of Si performed with the Bosch process.

• Journal of the Korean Magnetics Society
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• v.9 no.4
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• pp.203-209
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• 1999

Effects of Mo and Si addition in Cr underlayer on magnetic properties of CoCrTa/CrMo and CoCrTa/Si thin films media were investigated. Thin films were prepared with DC magnetron sputtering system. The thickness of CoCrTa magnetic layer and Cr underlayer were fixed at 300 $\AA$ and 700 $\AA$, respectively. The substrate heating temperature was kept constant at 26$0^{\circ}C$ for both magnetic layer and underlayer preparation. The coercivity increase of CoCrTa film was realized due to Mo addition in Cr underlayer. Si addition made a small decrease in coercivity. Coercivity increase seems to be attributed by the improvement of preferred orientation of Cr(200) plane. It is found that lattice fit between Cr(200) and CoCrTa(1120) of CrMo underlayer is better than that of CrSi underlayer. This small misfit may also contribute coercivity increase.

• Journal of Korea Foundry Society
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• v.22 no.4
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• pp.184-191
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• 2002

This study aims to investigate on the effects of alloying elements and heat treatment on the microstructures, wear and heat resistance of Al-Si-Cu-Mg-(Ni)/SiCp prepared by the duplex process developed in previous study, which consists of squeeze infiltration (1st process) and squeeze casting (2nd process). The hardness of composite increased with decrease in SiCp size and Ni addition in both the heat exposured composite and the as-cast one. And the heat and wear resisting properties was improved by the SiCp reinforcement and the Ni addition. The wear amount of Al/SiCp composite decreased with decreasing in the size of silicon carbide particle.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.207-207
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• 2006

We investigated the effects of hydrogen addition to the growth process of SiC single crystal using sublimation physical vapor transport(PVT) techniques. Hydrogen was periodically added to an inert gas for the growth ambient during the SiC bulk growth Grown 2"-SiC single crystals were proven to be the polytype of 6H-SiC and carrier concentration levels of about $10^{17}/cm^3$ was determined from Hall measurements. As compared to the characteristics of SiC crystal grown without using hydrogen addition, the SiC crystal without definitely exhibited lower carrier concentration and lower microplpe density as well as reduced growth rate.

• Journal of the Korean Ceramic Society
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• v.31 no.10
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• pp.1089-1098
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• 1994

The effect of Si3N4 addition on the microstructure and PTCR characteristics of BaTiO3 was studied. When 0.1 mol% Sb2O3-doped BaTiO3 codoped with Si3N4 (0.1, 0.25, 0.5, 0.75, and 1 wt%, respectively) were sintered, their microstructures were changed by the amount of the liquid phase as a result of eutectic reaction at 126$0^{\circ}C$. By these microstructural changes, the specific resistivity ratio($\rho$max/$\rho$min) with Si3N4 content variation of 0.1 mol% Sb2O3-doped BaTiO3 ceramics sintered at 130$0^{\circ}C$ for 1 hour varied between 3.70$\times$102(0.1 wt% Si3N4) to 1.16$\times$103 (1wt% Si3N4).

• Journal of the Korean Ceramic Society
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• v.31 no.7
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• pp.739-744
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• 1994

The B4C-C system was investigated to gain an understanding of the sintering behaviors of B4C. In order to get sintered density of 97% TD, sintering temperature of 225$0^{\circ}C$ was necessary. Since such a high temperature operation is actually difficult on a commercial basis, our objective was to examine the possibility of decreasing the sintering temperature by adding SiC. The addition of SiC in B4C increases the sintering rate about at 210$0^{\circ}C$ and results in a fine microstructure with more than 98% relative density on 55 wt% B4C-40wt% SiC-5 wt% C composition. The probability of liquid phase sintering was investigated, but the evidences of liquid phase formation were not observed with XRD and TEM observation. It was proposed that the addition of SiC and carbon to B4C reduce interface energy during sintering, which results in enhanced grain-boundary diffusion. Thus, the enhanced grain-boundary diffusion and retarded grain growth by SiC improve densification.