• 한국재료학회지
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• 제13권11호
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• pp.721-724
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• 2003

A Fe-Si-B-Ni amorphous alloy manufactured by one roll melt-spinning method showed the crystallization temperature difference of a maximum $10^{\circ}C$ according to each lot. This temperature difference had a considerable influence on the annealing process to be conducted for obtaining the proper inductance of the alloy. The proper annealing temperature of the alloy was $480^{\circ}C$ and the annealing time increased as the crystallization temperature increased. The activation energy measured by Kissinger method increased as the crystallization temperature increased. Therefore, the annealing process must be adjusted by the crystallization temperature difference of the amorphous alloy.

• 한국세라믹학회지
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• 제29권1호
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• pp.9-14
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• 1992

Some of non-isothermal analysis methods are applied to CaO-MgO-Al2O3-SiO2 glass system to find the kinetics parameters of crystallisation, activation energy, Avrami component and frequency factor. The results using the non-isothermal analysis were compared to that of microstructure experiment. Analysis of the result has enabled to some methods to be to recommend as being the most appropriate equation to use in a glass system. It was shown that in the thermal analysis using the non-isothermal method of Kissinger, Augis-Bennett, Bansal, and Marotta, the calculation of activation energy is not much different, while Avrami component and frequency factor are different from applied each methods.

• 한국세라믹학회지
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• 제31권12호
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• pp.1545-1551
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• 1994

Various kinetic parameters of the nucleation and crystallization in anorthite glass (CaO.Al2O3.2SiO2) were calculated by nonisothermal differential thermal analysis. Base glass and glass with TiO2 were prepared by melting. In base glass, the temperature where nucleation can occur ranges from 85$0^{\circ}C$ to 9$25^{\circ}C$ and the temperature for maximum nucleation was 900$\pm$5$^{\circ}C$. In glass with TiO2, the nucleation temperature range was 800~875$^{\circ}C$ and the maximum nucleation temperature was 850$\pm$5$^{\circ}C$. Kissinger equation, Bansal equation, and modified Ozawa equation were used for calculating activation energy for crystallization, Ec. The results showed the same activation energies for both glasses with and without TiO2 in the different equations. The shape of maximum exotherm peak and Ozawa equation were used for Avrami exponent, n. The n value for each glass was 2, indicating that each glass crystallized primarily by bulk crystallization.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.149-152
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• 2003

Soruce/drain (or, LDD) formation technology is critical to device reliability especially in the case of short channel LTPS-TFT devices. Ion shower doping with a main ion source of $P_2H_x$ was conducted on ELA Poly-Si. We report the effects of annealing methods on dopant activation and damage recovery in ion-shower doped poly-Si.

• Journal of Information Display
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• 제5권1호
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• pp.1-6
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• 2004

Ion shower doping with a main ion source of $P_2H_x$ using a source gas mixture of $PH_3/H_2$ was conducted on excimer-laser- annealed (ELA) poly-Si. The crystallinity of the as-implanted samples was measured using a UV-transmittance. The measured value of as-implanted damage was found to correlate well with the one calculated through/obtained from TRIM-code simulation. The sheet resistance was found to decrease as the acceleration voltage increased from 1 kV to 15 kV at a doping time of 1 min. However, it increases as the acceleration voltage increases under severe doping conditions. Uncured damage after furnace annealing is responsible for the rise in sheet resistance.

• 대한수의학회지
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• 제56권1호
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• pp.15-21
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• 2016

NAD(P)H-quinone oxidoreductase-1 (NQO1) is a down-stream target gene of nuclear factor erythroid 2-related factor 2 (Nrf2), and performs diverse biological functions. Recently, NQO1 is recognized as an effective gene for the cytotoxic inserts with its diverse biological functions, which is focused on antioxidant properties. The aim of present study was to assess the impact of NQO1 knockdown on cytoprotection-related protein expression in cisplatin cytotoxicity by using small interfering (si) RNA targeted on NQO1 gene. Cytotoxicity of cisplatin on ACHN cells was assessed in a dose- and time-dependent manner after siScramble or siNQO1 treatment. After cisplatin treatment, cells were subjected to cell viability assay, western-blot analysis, and immunofluorescence study. The cell viability was decreased in the siNQO1 cells (50%) than the siScramble cells (70%) after 24 h of cisplatin ($20{\mu}M$) treatment. Moreover, cytoprotection-related protein expressions were markedly suppressed in the siNQO1 cells after cisplatin treatment. The expression of Nrf2 and Klotho were decreased by 20% and 40%, respectively, of that in siScramble cells. Nrf2 and Klotho activation were also decreased in cisplatin treated siNQO1 cells, confirmed by cytoplasm-tonuclear translocation. Our findings demonstrate that the increased cisplatin-induced cytotoxicity was accompanied by suppressed Nrf2 activation and Klotho expression in siNQO1 cells.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1995년도 제8회 학술발표회 논문개요집
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• pp.057-58
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• 1995

극소전자 디바이스의 고집적화에 의해 박막배선의 선폭은 0.5$mu extrm{m}$ 이하로 축소되고 있고 상대적으로 높은 전류밀도가 흐르게 된다. 높은 전류밀도하에서는 현재 일반적으로 사용되고 있는 Al을 기본으로 하는 박막배선에서의 electromigration에 의한 결함 발생 그리고 비교적 낮은 전기전도도가 심각한 문제점으로 제기된다. 본 연구에서는 Al과 고전기전도도 물질인 Ag, Cu, 그리고 Au 박막배선에 대해 electromigration에 대한 저항성, 즉 activation energy를 측정 비교함으로써 차세대 극소전자 디바이스를 위한 박막배선재료로서의 가능성을 알아보고자 한다. Electromigration test 및 activation energy를 구하기 위해 순수 Ag, Cu, Al, Au 박막배선을 0.05$\mu\textrm{m}$ 두께, 100$\mu\textrm{m}$ 선폭, 그리고 5000$\mu\textrm{m}$ 길이로 SiO2 열산화막 처리된 pp-Si(100) 기판 위에 진공 증착시켰다. 가속화 실험을 위해 인가된 d.c. 전류밀도는 2$\times$106A/$ extrm{cm}^2$ 이었고, Al과 Au에서는 6$\times$106A/$\textrm{cm}^2$이었다. 실온에서 24$0^{\circ}C$까지의 온도범위에서 d.c.인가후의 저항변화를 측정하여 Median-Time-to-Failure(MTF)를 구한 후 Black 방정식을 이용하여 activation energy를 측정하였다. Activation energy는 Cu가 1.34eV로서 가장 높게 나타났고 Au가 1.01eV, Al이 0.66eV, Ag가 0.29eV의 순으로 측정되었다. 따라서 Cu와 Au 박막배선의 경우 Al보다 electromigration에 대한 저항력이 강한 고활성화에너지 특성을 갖는 고전기전도도 재료로서 차세대 극소전자 디바이스를 위한 대체 박막배선재료로서의 가능성을 보인다.

• Molecules and Cells
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• 제20권2호
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• pp.183-188
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• 2005

INI1/hSNF5/BAF47 is a core component of the hSWI/ SNF ATP-dependent chromatin remodeling complex, and it has been implicated in regulating gene expression, cell division and tumorigenesis. We investigated whether INI1/hSNF5/BAF47 functions in activation of the colony stimulating factor 1 (CSF1) promoter in HeLa cells. Overexpression of INI1/hSNF5/BAF47 promoted CSF1 transcription, and siRNA targeting INI1/hSNF5/ BAF47 (siINI1) strongly inhibited the activity of the CSF1 promoter. We demonstrated that all conserved domains of INI1/hSNF5/BAF47 are needed for CSF1 transcription. ChIP experiment showed that INI1/ hSNF5/BAF47 is recruited to the region of the CSF1 promoter. Taken together, these results indicate that INI1/hSNF5/BAF47 is involved in activation of the CSF1 promoter.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.907-909
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• 2003

We report a novel method of activation-annealing, named as induction annealing (IA). IA is realized by applying alternating electric field induced by alternatingmagnetic filed applied to the sample. We observed the enhanced kinetics of dopant activation by using IA.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.473-476
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• 1999

PMOS capacitors with Ce-policide electrode were fabricated by the SADS method to study the effects of activation condition on the C-V characteristics. For the activation temperature of $600^{\circ}C$ , the capacitor using CoSi$_2$ formed from Co/Ti bilayer as diffusion source showed excellent C-V properties and the increase in V$_{th}$ with the increasing activation time. But impurties into the oxide.e.