• Journal of Powder Materials
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• v.5 no.4
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• pp.241-249
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• 1998

Sintering kinetics of ball-milled $MoSi_2$ was studied with the addition of Ni. $MoSi_2$ powder with the average particle size of 1 $\mu\textrm{m}$ was obtained from ball-milling of 10 $\mu\textrm{m}$ powder. Small amount of Ni was added to the ball-milled $MoSi_2$ powder by salt solution and reduction method. The powder was compacted into cylindrical shape at 200 MPa and isothermally sintered in a $H_2$ atmosphere at the temperature range of 1100~$1400^{\circ}C$ for 3~600 minutes. The changes of linear shrinkage and sintered density were monitored as a function of sintering time. The microstructure was observed by using optical microscopy and scanning electron microscopy. Phases were identified by X-ray diffratometer and electro-probe micro analysis. Sintering kinetics of Ni-added powder was compared to as-milled powder and the apparent activation energy was calculated from Arrhenius plot.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.10
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• pp.883-890
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• 2005

In this paper, the established model of NBTI (Negative Bias Temperature Instability) mechanism was reviewed. Based on this mechanism, then, the influence of nitrogen was discussed among other processes. A constant concentration of nitrogen exists inside $SiO_2$ in order to prevent boron from diffusing and to increase dielectric constant. It was shown that NBTI improvement was achieved by controlling nitrogen profile. It was supposed that the existence of low activation energy of Si-N bonds at $Si-SiO_2$ interface attributes the improvement by making hydrogen prevent interface traps. It was also shown that improvement of NBTI can be achieved by more effective control of nitrogen profile. It was supposed that the maximum control of nitrogen profile can be achieved by DPN (Decoupled Plasma Nitridation) process.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.5
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• pp.48-53
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• 1998

Poly-Si TFT's could be fabricated on glass substrates by metal induced lateral crystallization (MILC) method at 450.deg. C. Channel area of the poly-Si TFT's was laterally crystallized from source and drain areas, where a thn nickel film was deposited. Dopants activation for the formation of source and drain region could be achieved by thermal annealing at 450.deg. C after the ion mass doping of phosphorus. The field effect mobility of thus formed N-channel poly-Si TFT's was 76cm$^{2}$/Vs, and the on/off current ratio was higher than 7E6.

• Journal of Korea Foundry Society
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• v.16 no.6
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• pp.513-522
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• 1996

In the present work, we have investigated the strain-induced melt activation (SIMA) process in Al-8%Si and Al-25%Si alloys. Primary dendrites were transformed into spherical microstrctures by mushy zone heat treatments of the cold-worked alloys. Various processing parameters which govern the sphering of the dendrites have been examined. The result showed that semi-solid alloys having a typically nondendritic spherical microstructure can be easily produced by this method.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.65-66
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• 2000

Various fluoride films on a glass substrate were prepared and characterized to provide a seed layer for crystalline Si film growth. The XRD analysis on $CaF_2/glass$ illustrated (220) preferential orientation and showed lattice mismatch less than 5 % with Si. We achieved a fluoride film with breakdown electric field of 1.27 MV/cm, leakage current density about $10^{-6}$ $A/cm^2$, and relative dielectric constant less than 5.6. This paper demonstrates microcrystalline silicon $({\mu}c-Si)$ film growth by using a $CaF_2/glass$ substrate. The ${\mu}c-Si$ films exhibited crystallization in (111) and (220) planes, grain size of $700\;{\AA}$, crystalline volume fraction over 65 %, dark- and photo-conductivity ratio of 124, activation energy of 0.49 eV, and dark conductivity less than $4{\times}10^{-7}$ S/cm.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.665-667
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• 2005

VIATRON TECHNOLOGIES has developed FE-RTP system that enables LTPS LCD and AMOLED manufacturers to produce poly-Si films at low cost, high throughput, and high yield. The system employs sequential heat treatment methods using temperature control and rapid thermal processor modules. The temperature control modules provide exceptionally uniform heating and cooling of the glass substrates to within ${\pm}2^a\;C$. The rapid thermal process that combines heating with field induction accelerates the treatment rates. The new FE-RTP system can process $730{\times}920mm$ glass substrates as thin as 0.4 mm. The uniform nature of poly-Si films produced by FE-RTP resulted in AMOLED panels with no laser-Muras. Furthermore, FE-RTP system also showed superior performances in other heat treatment processes involved in poly-Si TFT fabrications, such as dopant activation, gate oxide densification, hydrogenation, and pre-compaction.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.269-271
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• 2005

Using optimized sputtering condition of a-Si and $SiO_2$ thin film, we can obtained the large grained poly-Si film on PES substrate. The gate dielectric grown by plasma enhanced atomic layer deposition, laser activation and organic interlayer dielectric material make TFTs on PES possible with mobility of $11cm^2/Vs$ (nMOS) and $7cm_2/Vs$ (pMOS).

• Journal of the Korean Ceramic Society
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• v.33 no.9
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• pp.985-994
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• 1996

The initiation and growth of $\alpha$-Al2O3/metal composites by the directed oxidation of molten commercial AlZnMg-alloy at 1223-1423K were investigated. Spontaneous bulk growth did not occur on the alloy alone. but the uniform initiation and growth of the composite were obtained by putting a thin layer of SiO2 particles on the surface of the alloy. Without SiO2 the external surface of the oxide layer was convered by MgO and MgAl2O4. But with the SiO2 reaction initiate the porous ZnO layers were found on the growth surface. The higher process temperature yielded a lower metal content. The oxidation product of $\alpha$-Al2O3 was found to be oriented with c-axis parallel to th growth direction. The growth rates increased with temperature and the apparent activation energy was 111.8 kJ/mol.

• Proceedings of the KAIS Fall Conference
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• 2004.11a
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• pp.280-283
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• 2004

Effect of H2 spillover rate as function of reduction temperature on reaction kinetics was evaluated. Reaction kinetics including yield, conversion, activation energy and selectivity of 1-butene isomerization over Pt/HxMoO/SiO were measured as reaction temperature was increased. While conversion of 1-butane was decreased, yield of iso-butene was increased. Two kinds of reaction mechanism were proposed from the change of selectivity as function of temperature.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.157-157
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• 2000

The adsorption processes of methyl chloride on Si(100)-2$\times$1 have been studied by low energy electron diffraction (LEED), Auger electron spectroscopy (AES) and semiempirical PM3 calculations. The dissociative adsorption of the methyl chloride on Si(100) takes place without breaking of the silicon dimer with high efficiency. For adsorption at the room temperature, the existence of a precursor state is confirmed by the behavior of the sticking probability depending on the coverage and temperature. From AES measurements, the determined activation barrier of adsorption ($\Delta$ Hads) is -28.4 kj/mol. This results indicate that the dissociative process is nonactivated. The optimized precursor state of CH3Cl on the Si(100)-2$\times$1 surface was determined by PM3 calculations based on a cluster model.