Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Improvement of Negative Bias Temperature Instability by Decoupled Plasma Nitridation Process

Decoupled Plasma Nitridation 공정 적용을 통한 Negative Bias Temperature Instability 특성 개선

  • 박호우 (성균관대학교 정보통신공학부/(주) 삼성전자 System LSI 사업부 기술개발실) ;
  • 노용한 (성균관대학교 정보통신공학부)
  • Published : 2005.10.01
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Abstract

In this paper, the established model of NBTI (Negative Bias Temperature Instability) mechanism was reviewed. Based on this mechanism, then, the influence of nitrogen was discussed among other processes. A constant concentration of nitrogen exists inside $SiO_2$ in order to prevent boron from diffusing and to increase dielectric constant. It was shown that NBTI improvement was achieved by controlling nitrogen profile. It was supposed that the existence of low activation energy of Si-N bonds at $Si-SiO_2$ interface attributes the improvement by making hydrogen prevent interface traps. It was also shown that improvement of NBTI can be achieved by more effective control of nitrogen profile. It was supposed that the maximum control of nitrogen profile can be achieved by DPN (Decoupled Plasma Nitridation) process.

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References

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