• Toxicological Research
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• v.17
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• pp.257-261
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• 2001

Recently, a traditional medicine called Gouteng-san, which consists of eleven herbs, was reported to be effective in treating vascular dementia with a double-blind, placebo-controlled study. Gout-eng-san is also used for patients with vascular dementia in combination with Si-Wu-Tang. The effect of Gouteng-san and Si-Wu-Tang on deficit of learning behavior was investigated using step-down passive avoidance task in mice. Hot-water extract of Gouteng-san (1.5 and 6 g/kg, p.o.) significantly prolonged the step-down latency shortened by scopolamine. The extract of Uncaria hook (150 mg/kg, p.o.), one of the component herb of Gouteng-san, significantly prevented the decrease in the latency after scopolamine. Hot-water extract of Si-Wu-Tang (1.5 and 6 g/kg of dried herbs, p.o.) prevented dose-dependently scopola-mine-induced disruption qf learning behavior. Si-Wu-Tang also prevented the ischemia-induced deficit of learning behavior. Both hot water extract of peony and angelica (1.5 g/kg, p.o.), which are component herbs qf Si-Wu-Tang, prevented the scopolamine-induced learning behavior deficit. Scopolamine (10 uM) suppressed long-term potentiation (LTP) of population spike in the CA1 region of the rat hippocampal slices. Peoniflorin (0.1~ 1uM) extracted from paeony root significantly ameliorated scopolamine-induced inhibition of LTR These results suggest that improvement of deficit of learning behavior by Gouteng-san and Si-Wu-Tang is mediated by direct and/or indirect activation of the cholinergic system in the brain.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.227-227
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• 2010

기존 실리콘 박막 태양 전지는 적외선에 대한 감응도와 흡수도가 낮아서 광흡수율을 증가시킬 경우 효율의 효과적인 개선이 기대되어진다. 이를 개선하기 위해서 밴드갭이 Si에 비해 상대적으로 낮은 Ge을 도입함으로써 Si와 Ge 화합물을 형성할 경우 결정상태와 수소 함유량에 따라 밴드갭 조절이 가능하다. 또한 Ge는 Si에 비해 빛에 대한 감응도가 우수하여 광흡수율을 증가시킬수 있다. 단 SiGe 박막의 Ge 량이 일정량이상 많아질 경우 박막 내 결함 등의 생성으로 광변환 효율이 오히려 감소하므로 Ge 량의 적정화가 필요하다. 본 실험에 사용된 SiGe:H Layer는 $SiH_4$ 가스와 $GeH_4$ 가스를 혼합하여 증착하였고 증착두께는 150nm로 고정하였으며 증착장비는 PECVD를 이용하였다. 파워는 플라즈마의 방전특성을 알아본 후 최소파워를 이용하여 증착하였다. 이는 증착 시 플라즈마에 의한 박막 손상을 최소화하기 위함이다. Ellipsometry를 이용하여 박막의 두께와 optical bandgap을 측정하였다. 박막의 특성을 평가하기 위해서 STA 장비를 이용하여 dark conductivity, photo conductivity, activation energy 등을 측정하였고, MDC를 이용해 C-V 곡선을 측정하였고, 이를 terman method를 이용하여 $D_{it}$를 계산하였다.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.2
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• pp.66-72
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• 1995

Using the Si/SiGe layer grown by solid source molecular beam epitaxy(SSMBE) on the LOCOS-patterned wafers, an emitter-base self-aligned hterojunction biplar transistor(HBT) with the polysilicon-emitter and the silicon germanium(SiGe) base has been fabricated. Trech isolation process, planarization process using a chemical-mechanical poliching, and the selectively implanted collector(SIC) process were performed. A titanium disilicide (TiSi$_{2}$), as a base electrode, was used to reduce an extrinsic base resistance. To prevent the strain relaxation of the SiGe epitaxial layer, low temperature (820${^\circ}C$) annealing process was applied for the emitter-base junction formation and the dopant activation in the arsenic-implanted polysilicon. For the self-aligned Si/SiGe HBT of 0.9${\times}3.8{\mu}m^{2}$ emitter size, a cut-off requency (f$_{T}$) of 17GHz, a maximum oscillation frequency (f$_{max}$) of 10GHz, a current gian (h$_{FE}$) of 140, and an emitter-collector breakdown voltage (BV$_{CEO}$) of 3.2V have been typically achieved.

• Korean Journal of Materials Research
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• v.12 no.1
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• pp.94-99
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• 2002

The electrical properties of porous $SiO_2/ITO$ nano thin film were studied by complex impedance and conductive mechanisms were analyzed. According to the results of complex impedance, the activation energy of $SiO_2/ITO$ and $Zn-SiO_2/ITO$ were 0.309 eV, 0.077 eV in below $450^{\circ}C$ and 0.147 eV in over $450^{\circ}C$, respectively. In case of $SiO_2/ ITO$, slightly direct tunneling occurred at room temperature. The contribution for conduction was very tiny because of high barrier of silica. However, the conductivity abruptly increased in over $300^{\circ}C$ by Thermally assisted tunneling. In case of $Zn-SiO_2/ITO$, high conductivity in 1.26 ${\Omega}^{ -1}{cdot}cm^{-1}$ at room temperature appeared by space charge conduction or Frenkel-poole emission that Zn ions play a role as localized electron states.

• Journal of the Korean Ceramic Society
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• v.31 no.4
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• pp.375-380
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• 1994

Matrices retaining electrolyte in phosphoric acid fuel cell were prepared with SiC to SiC whisker mixing ratios of 1:0.5, 1:1, 1:1.5, 1:2, 1:3 by tape casting method. When viscosity of the slurry was 5.9 poise and the SiC to SiC whisker mixing ratios were 1:1, 1:1.5, 1:2, the ranges of porosity, acid absorbency and bubble pressure were 80~90%, 2.5~6 and 700~2200 mmH2O, respectively. Those ranges are acceptable for a practical electrolyte-retaining matrix. With increasing the mixing ratio of SiC whisker to SiC, the porosity and the vol.% of large pores in the main pore size distribution which is between 1 and 10 ${\mu}{\textrm}{m}$, increased rapidly. Impedance spectroscopy was measured to know characteristics of matrix inside and contact region of matrix to catalyst layer. When the SiC to SiC whisker mixing ratio was 1:2, hydrogen ions were transported in the matrix most effectively because of high ionic conductivity and low activation energy due to high acid absorbency in spite of high interfacial resistance. The cell current density of the cell made using the matrix was 220 mA/$\textrm{cm}^2$ at 0.7 V.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.154-155
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• 2012

The promise of nano-crystalites (nc) as a technological material, for applications including display backplane, and solar cells, may ultimately depend on tailoring their behavior through doping and crystallinity. Impurities can strongly modify electronic and optical properties of bulk and nc semiconductors. Highly doped dopant also effect structural properties (both grain size, crystal fraction) of nc-Si thin film. As discussed in several literatures, P atoms or radicals have the tendency to reside on the surface of nc. The P-radical segregation on the nano-grain surfaces that called self-purification may reduce the possibility of new nucleation because of the five-coordination of P. In addition, the P doping levels of ${\sim}2{\times}10^{21}\;at/cm^3$ is the solubility limitation of P in Si; the solubility of nc thin film should be smaller. Therefore, the non-activated P tends to segregate on the grain boundaries and the surface of nc. These mechanisms could prevent new nucleation on the existing grain surface. Therefore, most researches shown that highly doped nc-thin film by using conventional PECVD deposition system tended to have low crystallinity, where the formation energy of nucleation should be higher than the nc surface in the intrinsic materials. If the deposition technology that can make highly doped and simultaneously highly crystallized nc at low temperature, it can lead processes of next generation flexible devices. Recently, we are developing a novel CVD technology with a neutral particle beam (NPB) source, named as neutral beam assisted CVD (NBaCVD), which controls the energy of incident neutral particles in the range of 1~300eV in order to enhance the atomic activation and crystalline of thin films at low temperatures. During the formation of the nc-/pm-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. In the case of phosphorous doped Si thin films, the doping efficiency also increased as increasing the reflector bias (i.e. increasing NPB energy). At 330V of reflector bias, activation energy of the doped nc-Si thin film reduced as low as 0.001 eV. This means dopants are fully occupied as substitutional site, even though the Si thin film has nano-sized grain structure. And activated dopant concentration is recorded as high as up to 1020 #/$cm^3$ at very low process temperature (＜ $80^{\circ}C$) process without any post annealing. Theoretical solubility for the higher dopant concentration in Si thin film for order of 1020 #/$cm^3$ can be done only high temperature process or post annealing over $650^{\circ}C$. In general, as decreasing the grain size, the dopant binding energy increases as ratio of 1 of diameter of grain and the dopant hardly be activated. The highly doped nc-Si thin film by low-temperature NBaCVD process had smaller average grain size under 10 nm (measured by GIWAXS, GISAXS and TEM analysis), but achieved very higher activation of phosphorous dopant; NB energy sufficiently transports its energy to doping and crystallization even though without supplying additional thermal energy. TEM image shows that incubation layer does not formed between nc-Si film and SiO2 under later and highly crystallized nc-Si film is constructed with uniformly distributed nano-grains in polymorphous tissues. The nucleation should be start at the first layer on the SiO2 later, but it hardly growth to be cone-shaped micro-size grains. The nc-grain evenly embedded pm-Si thin film can be formatted by competition of the nucleation and the crystal growing, which depend on the NPB energies. In the evaluation of the light soaking degradation of photoconductivity, while conventional intrinsic and n-type doped a-Si thin films appeared typical degradation of photoconductivity, all of the nc-Si thin films processed by the NBaCVD show only a few % of degradation of it. From FTIR and RAMAN spectra, the energetic hydrogen NB atoms passivate nano-grain boundaries during the NBaCVD process because of the high diffusivity and chemical potential of hydrogen atoms.

• Journal of Physiology & Pathology in Korean Medicine
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• v.24 no.5
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• pp.872-876
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• 2010

The present study found that EA pre-treatment effectively attenuated both spinal ERK activation and hyperalgesia against carrageenan-induced inflammation, whereas EA co-treatment with carrageenan injection unexpectedly elevated ERK activation in a synergistic manner and virtually had no analgesic effect. Therefore, we have concluded that the molecular mechanism of EA anagesia may be related to the inhibition of spinal ERK activation. Further experiments are required to find the intermediate candidates which transmits the pain-alleviating signals on the way of inhibiting ERK activation by EA.

• Toxicological Research
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• v.21 no.1
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• pp.57-62
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• 2005

To investigate the mutant induction of wild ginseng culture extract, we performed chromosomal aberration assay with chinese hamster lung cell in vitro. The test concentration of the extract was decided for the standard with the 50% suppression of cell propagation in the cell. The concentrations for the chromosome test were 1,250, 2,500 and 5,000 ㎍/ml with metabolic activation (+S, 6 hours treatment), 1,100, 2,200 and 4,400 ㎍/ml without metabolic activation (-S, 6 hours treatment) 800, 1,600 and 3,200 ㎍/ml without metabolic activation (-S, 24 hours treatment). No significant increase in chromosome aberrations was observed at any of these concentrations both in the absence and presence of metabolic activation system. Cyclophosphamide monohydrate (CPA) and ethylmethanesulfonate (EMS) caused a significant increase in chromosome aberration. These results may be concluded that wild ginseng culture extract is not capable of inducing chromosome aberration in cultured chinese hamster lung cell regardless of metabolic activation and genotoxicity of that is negative under the present experimental condition.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.207-207
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• 2012

Si quantum dot (QD) imbedded in a $SiO_2$ matrix is a promising material for the next generation optoelectronic devices, such as solar cells and light emission diodes (LEDs). However, low conductivity of the Si quantum dot layer is a great hindrance for the performance of the Si QD-based optoelectronic devices. The effective doping of the Si QDs by semiconducting elements is one of the most important factors for the improvement of conductivity. High dielectric constant of the matrix material $SiO_2$ is an additional source of the low conductivity. Active doping of B was observed in nanometer silicon layers confined in $SiO_2$ layers by secondary ion mass spectrometry (SIMS) depth profiling analysis and confirmed by Hall effect measurements. The uniformly distributed boron atoms in the B-doped silicon layers of $[SiO_2(8nm)/B-doped\;Si(10nm)]_5$ films turned out to be segregated into the $Si/SiO_2$ interfaces and the Si bulk, forming a distinct bimodal distribution by annealing at high temperature. B atoms in the Si layers were found to preferentially substitute inactive three-fold Si atoms in the grain boundaries and then substitute the four-fold Si atoms to achieve electrically active doping. As a result, active doping of B is initiated at high doping concentrations above $1.1{\times}10^{20}atoms/cm^3$ and high active doping of $3{\times}10^{20}atoms/cm^3$ could be achieved. The active doping in ultra-thin Si layers were implemented to silicon quantum dots (QDs) to realize a Si QD solar cell. A high energy conversion efficiency of 13.4% was realized from a p-type Si QD solar cell with B concentration of $4{\times}1^{20}atoms/cm^3$. We will present the diffusion behaviors of the various dopants in silicon nanostructures and the performance of the Si quantum dot solar cell with the optimized structures.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.5
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• pp.501-508
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• 1988

This paper presents the light-induced effects on the elelctrical and optical properties of undoped and doped hydrogenated amorphous silicon films. The changes in the conductivities and the activation energies of various types of a-Si:H films due to the prolonged exposure to light have been characterized as a function of deposition conditions and illumination periods. The dark conductivity changes may be quenched for heavier doped a-Si:H films. We have also analyzed the variations of micro-structure of a-Si:H film such as silicon-hydrogen bondings in the rocking and stretching modes utilizing infrared spectroscopy. From the experimental results, it is elucidated that doping effects must be crucial to the degradations of the fundamental properties of a-Si:H due to light-induced effects.