• Tribology and Lubricants
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• 제23권6호
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• pp.298-300
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• 2007

Frictional characteristics of mesoporous $SiO_2$ thin films were evaluated with different pore sizes. The films were manufactured by sol-gel and self-assembly methods to have a porous structure. The pores on the surface may play as the outlet of wear particle and the storage of lubricant so that the surface interactions could be improved. The pores were exposed on the surface by chemical mechanical polishing (CMP) or plasma-etching after forming the porous films. The ball-on-disk tests with mesoporous $SiO_2$ thin films on glass specimen were conducted at sliding speed of 15 rpm and a load of 0.26 N. The results show considerable dependency of friction on pore size of mesoporous $SiO_2$ thin films. The friction coefficient decreased as increasing the pore size. CMP process was very useful to expose the pores on the surface.

• JSTS:Journal of Semiconductor Technology and Science
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• 제13권4호
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• pp.410-414
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• 2013

We report the wet etching of titanium nickel (TiNi) films for the production of nano-electro-mechanical (NEM) device. $SiO_2$ and $Si_3N_4$ have been selected as sacrificial layers of TiNi metal and etched with polyethylene glycol and hydrofluoric acid (HF) mixed solution. Volume percentage of HF are varied from 10% to 35% and the etch rate of the $SiO_2$, $Si_3N_4$ and TiNi are reported here. Within the various experiment results, 15% HF mixed polyethylene glycol solution show highest etch ratio between sacrificial layer and TiNi metal. Especially $Si_3N_4$ films shows high etch ratio with TiNi films. Wet etching results are measured with SEM inspection. Therefore, this experiment provides a novel method for TiNi in the nano-electro-mechanical device.

• 반도체디스플레이기술학회지
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• 제22권1호
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• pp.64-71
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• 2023

In this study, we investigated the effects of BiAlSiO glass composition on its glass forming range, thermal properties, and plasma resistance. The results showed that increasing the Al2O3 content suppressed the tendency for crystallization and hindered glass formation beyond a certain threshold. Bi2O3 was found to increase the content of non-bridging oxygen, resulting in a decrease in glass transition temperature and an increase in thermal expansion coefficient. Furthermore, the etching rate was found to improve with increasing Al2O3 content but decrease with increasing SiO2 content. It was concluded that the boiling point of fluorinated compounds should be considered to 900℃. Therefore, this study is expected to contribute to the understanding of the properties of BiAlSiO glass and its application to low temperature melting PRG compositions.

• 마이크로전자및패키징학회지
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• 제17권3호
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• pp.79-84
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• 2010

3차원 Si 칩 패키징 공정을 위한 비아 홀(TSV: Through-Si-Via) 및 Au 시드층 형성, 전기 도금을 이용한 Cu 충전기술과 범핑 공정 단순화에 관하여 연구하였다. 비아 홀 형성을 위하여 $SF_6$ 와 $C_4F_8$ 플라즈마를 교대로 사용하는 DRIE(Deep Reactive Ion Etching) 법을 사용하여 Si 웨이퍼를 에칭하였다. 1.92 ks동안 에칭하여 직경 40 ${\mu}m$, 깊이 80 ${\mu}m$의 비아 홀을 형성하였다. 비아 홀의 옆면에는 열습식 산화법으로 $SiO_2$ 절연층을, 스퍼터링 방법으로 Ti 접합층과 Au 시드층을 형성하였다. 펄스 DC 전기도금법에 의해 비아 홀에 Cu를 충전하였으며, 1000 mA/$dm^2$ 의 정펄스 전류에서 5 s 동안, 190 mA/$dm^2$의 역펄스 조건에서 25 s 동안 인가하는 조건으로 총 57.6 ks 동안 전기도금하였다. Si 다이 상의 Cu plugs 위에 리소그라피 공정 없이 전기도금을 실시하여 Sn 범프를 형성할 수 있었으며, 심각한 결함이 없는 범프를 성공적으로 제조할 수 있었다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2008년도 춘계학술발표대회 및 제14회 신소재 심포지엄
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• pp.4.1-4.1
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• 2008

• Korean Chemical Engineering Research
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• 제44권5호
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• pp.498-504
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• 2006

고밀도 $CHF_3$ 플라즈마를 이용한 식각에서 photoresist(PR)의 식각속도 및 $SiO_2$의 PR에 대한 식각 선택도가 이온의 입사 각도에 따라 변화하는 특성을 관찰하였다. 플라즈마 내에 파라데이 상자를 설치하여 이온의 입사 각도를 조절하였으며, 바이어스 전압을 변화시켜 이온의 입사 에너지를 조절하였다. 대부분의 바이어스 전압에서 $SiO_2$의 식각속도는 이온입사각도가 증가함에 따라 단조 감소함에 비해 PR의 식각속도는 중간각도 영역까지 일정하다가 그 이후에 감소하기 시작하였다. 이온입사각도가 $0^{\circ}$인 조건에서의 식각속도를 기준으로 정규화된 식각속도(NER)는 $SiO_2$의 경우 cosine함수와 거의 일치하였으나 PR의 경우 중간각도영역에서 over-cosine 형태를 보였다. PR에 대한 $SiO_2$의 식각선택도는 이온입사각도에 따라 점차로 감소하였는데, 이는 PR이 $SiO_2$에 비해 중간각도에서 물리적 스퍼터링에 의해 식각 수율이 크게 증가하였기 때문이다. 또한, 바이어스 전압의 증가에 따라 PR에 대한 식각선택도는 대부분의 이온입사각도에서 감소하였다.

• Transactions on Electrical and Electronic Materials
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• 제12권4호
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• pp.144-147
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• 2011

In this work, we present a study regarding the etching characteristics on titanium nitride (TiN) thin films using an inductively coupled plasma system. The TiN thin film was etched using a $N_2/BCl_3$/Ar plasma. The studied etching parameters were the gas mixing ratio, the radio frequency (RF) power, the direct current (DC)-bias voltages, and the process pressures. The baseline conditions were as follows: RF power = 500 W, DC-bias voltage = -150 V, substrate temperature = $40^{\circ}C$, and process pressure = 15 mTorr. The maximum etch rate and the selectivity of the TiN to the $SiO_2$ thin film were 62.38 nm/min and 5.7, respectively. The X-ray photoelectron spectroscopy results showed no accumulation of etching byproducts from the etched surface of the TiN thin film. Based on the experimental results, the etched TiN thin film was obtained by the chemical etching found in the reactive ion etching mechanism.

• 동굴
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• 제82호
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• pp.1-4
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• 2007

In this paper, the etching of Au films using photoresist masks on Si substrates was investigated using a capacitively coupled plasma etch reactor. The advantages of plasma etch techniques over current methods for Au metalization include the ability to simplify the metalization process flow with respect to resist lift-off schemes, and the ability to cleanly remove etched material without sidewall redeposition, as is seen in ion milling. The etch properties were measured for different gas mixing ratios of CF4/Ar, and chamber pressures while the other conditions were fixed. According to statistical design of experiment (DOE), etching process of Au films was characterized and also 20 samples were fabricated followed by measuring etch rate, selectivity and etch profile. There is a chemical reaction between CF4 and Au. Au- F is hard to remove from the surface because of its high melting point. The etching products can be sputtered by Ar ion bombardment.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1992년도 하계학술대회 논문집 B
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• pp.850-853
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• 1992

A cryogenic electron cyclotron resonance plasma etching system has been built to study wafer-temperature in the silicon etching characteristics. The wafer temperature was controlled from -150 to +30 $^{\circ}C$ during etching using the liquid nitrogen cooled helium gas. Although silicon was etched isotropically in $SF_6$ plasma at room temperatures, we found that it is possible to suppress the etch undercut in Si by reducing a substrate temperature without side wall passivation. In addition, the selectivity of silicon to photoresist was improved considerably at a low wafer temperature. Etch rates, anisotropy and selectivity to photo resist are measured as a function of the wafer temperature in the region of -125 $\sim$ 25$^{\circ}C$ and rf bias power of 20W $\sim$ 80W.

• 한국전기전자재료학회논문지
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• 제11권3호
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• pp.203-207
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• 1998

After etching Al-Cu alloy films using $SiCl_4/Cl_2/He/CHF_3$ plasma, a corrosion phenomenon on the metal surface has been studied with XPS (X-ray photoelectron spectroscopy) and SEM (Scanning electron microscopy). In Al-Cu alloy system, the corrosion occurs rapidly on the etched surface by residual chlorine atoms. To prevent the corrosion, the $SF_6$ plasma treatment subsequent to the etch has been carried out. A passivation layer is formed by fluorine-related compounds on etched Al-Cu alloy surface after $SF_6$ treatment, and the layer suppresses effectively the corrosion on the surface as the RF power of $SF_6$ treatment increases. The corrosion could be suppressed successfully with $SF_6$ treatment in the RF power of 150watts.