• Journal of Korea Foundry Society
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• 제20권3호
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• pp.197-207
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• 2000

Al-Si alloys were solidified in a rotating cylindrical mold by a vertical centrifugal casting process. Under a certain casting condition, there are four distinct zones such as the chill zone, the primary fine columnar zone, the equiaxed zone, and the secondary coarse columnar zone from the mold wall. The columnar-equiaxed transition (CET) and the equiaxed-columnar transition (ECT) were measured as functions of solute content, flow rate (mold velocity), pouring temperature and mold temperature. Within the critical value of solute content, as the flow rate increases, the columnar-equiaxed transition were found, but not the equiaxed-columnar transition. The aspect ratio of the primary columnar zone was more affected by the solute content than the flow rate. However the aspect ratio of the equiaxed zone was more affected by the flow rate than the solute content. The aspect ratio of the secondary columnar zone was affected by both the flow rate and the solute content.

• Journal of the Korean Ceramic Society
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• 제41권3호
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• pp.197-201
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• 2004

SiO$_2$ and SiON thick films were deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) technique on silicon wafer (100) using SiH$_4$ and $N_2$O as precursor gases. In this work, the influence of rf power, and rf bias power on the optical and physical properties of SiO$_2$ and SiON thick films is presented. The refractive index decreases with increasing rf power, and rf bias power. The refractive index of the films varied from 1.4493 to 1.4952 at wavelength at 1552 nm, with increasing rf power, the nitrogen content decreases while the oxygen content increases, in a manner that the O/N ratio increases approximately linearly.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.385-385
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• 2012

A two terminal N+/P/N+ junction device to replace the conventional selective transistor was studied as a bilateral switching device for spin transfer torque (STT) MRAM based on 3D device simulation. An N+/P/N+ junction structure with $30{\times}30nm$ area requires bi-directional current flow enough to write a data by a drain induced barrier lowering (DIBL) under a reverse bias at N+/P (or P/N+ junction), and high current on/off ratio of 106. The SiGe materials are widely used in hetero-junction bipolar transistors, bipolar compensation metal-oxide semiconductors (BiCMOS) since the band gap of SiGe materials can be controlled by changing the fraction and the strain epilayers, and the drift mobility is increased with the increasing Ge content. In this work, N+/P/N+ SiGe material based junction provides that drive current is increased from 40 to $130{\mu}A$ by increased Ge content from 10~80%. When Ge content is about 20%, the drive current density of SiGe device substantially increased to 2~3 times better than Si-based junction device in case of 28 nm P length, which is sufficient current to operation of STT-MRAM.

• Journal of Electrochemical Science and Technology
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• 제2권1호
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• pp.51-56
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• 2011

We develop a new nonwoven composite separator for a safer lithium-ion battery, which is based on coating of silica ($SiO_2$) colloidal particles/styrene-butadiene rubber (SBR) binder to a poly(ethylene terephthalate) (PET) nonwoven support. The $SiO_2$ particles are interconnected by the SBR binder and closely packed in the nonwoven composite separator, which thus allows for the development of unusual porous structure, i.e. highly-connected interstitial voids formed between the $SiO_2$ particles. The PET nonwoven serves as a mechanical support that contributes to suppressing thermal shrinkage of the nonwoven composite separator. The $SiO_2$/SBR content in the nonwoven composite separators plays an important role in determining their separator properties. Porous structure, air permeability, and electrolyte wettability of the nonwoven composite separators, in comparison to a commercialized polyethylene (PE) separator, are elucidated as a function of the $SiO_2$/SBR content. Based on this understanding of the nonwoven composite separators, the effect of $SiO_2$/SBR content on the electrochemical performances such as self-discharge, discharge capacity, and discharge C-rate capability of cells assembled with the nonwoven composite separators is investigated.

• Journal of Korea Foundry Society
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• 제26권6호
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• pp.249-257
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• 2006

The effects of alloying element and the condition of heat-treatment on the strength of squeeze-cast Al-3.0 wt%Si alloy were investigated. The strength of the alloy without grain refinement was increased with increase Cu content upto 3.0 wt% and rather decreased beyond that. The tensile strength of the alloy with grain refinement increased with Cu content upto 3.0 wt% and not changed beyond that. The strength of the alloy without grain refinement increased with the Mg content. The tensile strength with grain refinement increased with the Mg content upto 0.50 wt% and then decreased beyond that. The strength of the grain refined alloy increased by individual and simultaneous additions of Cu and Mg and the maximum strength was obtained with Al-3.0 wt%Si-4.5 wt%Cu-0.50 wt%Mg alloy. The optimum heat-treatment condition for this alloy was obtained.

• Journal of the Semiconductor & Display Technology
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• 제22권1호
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• pp.64-71
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• 2023

In this study, we investigated the effects of BiAlSiO glass composition on its glass forming range, thermal properties, and plasma resistance. The results showed that increasing the Al2O3 content suppressed the tendency for crystallization and hindered glass formation beyond a certain threshold. Bi2O3 was found to increase the content of non-bridging oxygen, resulting in a decrease in glass transition temperature and an increase in thermal expansion coefficient. Furthermore, the etching rate was found to improve with increasing Al2O3 content but decrease with increasing SiO2 content. It was concluded that the boiling point of fluorinated compounds should be considered to 900℃. Therefore, this study is expected to contribute to the understanding of the properties of BiAlSiO glass and its application to low temperature melting PRG compositions.

• Weed & Turfgrass Science
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• 제5권3호
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• pp.170-176
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• 2016

Superintendents have used a silicate fertilizer to improve a resistance of turfgrass against several diseases, drought damage and wear stress. This study was conducted to evaluate the effect of liquid fertilizer containing silicate (LFSi) on changes of turfgrass quality and growth by investigating visual quality, chlorophyll content-chlorophyll a, chlorophyll b, and total chlorophyll, root length, shoot length, dry weight of clipping, and nutrient content in leaves tissue. Treatments were designed as follows; control fertilizer (CF), SiF-1 (CF + $1ml\;m^{-2}$ LFSi), SiF-2 (CF + $2ml\;m^{-2}$ LFSi), and SiF-3 (CF + $4ml\;m^{-2}$ LFSi). As compared with CF, soil chemical properties, visual turfgrass quality, chlorophyll content, and dry weight of clipping of LFSi treatments were not significantly. Contrastingly, shoot density, root length, and the content of nitrogen or potassium were increased by application of LFSi. The content of Si in the tissue was positively correlated with potassium content or shoot length, and similarly shoot density positively with chlorophyll content or visual quality, respectively. These results suggested that the application of LFSi improved the turfgrass quality by increasing shoot density or K content in leaf tissue of creeping bentgrass.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 한국표면공학회 2014년도 추계학술대회 논문집
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• pp.304-304
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• 2014

Quaternary Ti-Al-Si-N films were deposited on WC-Co substrates by a hybrid deposition system of arc ion plating (AIP) method for Ti-Al source and DC magnetron sputtering technique for Si incorporation. The synthesized Ti-Al-Si-N films were revealed to be composites of solid-solution (Ti,Al)N crystallites and amorphous $Si_3N_4$ by instrumental analyses. The Si addition in Ti-Al-N films affected the refinement and uniform distribution of crystallites by percolation phenomenon of amorphous silicon nitride, similarly to Si effect in TiN film. As the Si content increased up to about 9 at.%, the hardness of Ti-Al-N film steeply increased from 30 GPa to about 50 GPa. The highest microhardness value (~50 GPa) was obtained from the Ti-Al-Si-N film having the Si content of 9 at.%, the microstructure of which was characterized by a nanocomposite of $nc-(Ti,Al)N/a-Si_3N_4$.

• The Korean Journal of Ceramics
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• 제5권3호
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• pp.255-259
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• 1999

The effects of $SiO_2$ and MnO addition on the sinterability and the electrical properties of 0.4mol% Nb-doped SrTiO3 varistor were investigated. The $SiO_2$ content was fixed at 0.3mol% and the MnO content varied from 0 to 1.0mol%. With 0.3 mol% $SiO_2$ and 0.3 mol% MnO addition, optimum density was obtained by sintering at $1200^{\circ}C$ without excess liquid phase. Impedance spectroscopy was performed on the sintered specimens with 0.3 mol% $SiO_2$ and various MnO contents. It was found that the resistivities of grains was increased with increasing MnO content. The dielectric constant was measured to be above 50000 in the specimen with 0.3~1.0mol% Mn content. The non-linear coefficient increased substantially with MnO addition, and it varied from 1 to 9 depending on the MnO content.

• Journal of Korea Foundry Society
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• 제29권4호
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• pp.169-175
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• 2009

Effect of iron and manganese contents on die soldering reaction has been studied in Al-9wt.%Si-0.3wt.%Mg alloy. Ternary ${\alpha}_{hcp}-Al_8Fe_2Si$ and ${\alpha}_{bcc}-Al_8Fe_2Si$ intermetallic compounds formed by interaction diffusion between Al-Si-Mg system alloy melt and SKD61 die steel surface. Thickness of soldering reaction layer in die steel surface decreased as Fe and Mn contents of the melts increased : When Fe content of Al-9wt.%Si-0.3wt.%Mg melts at constant 0.5wt%Mn content was 0.15wt.%, 0.45wt.% and 0.6wt.%, thickness of soldered layer of each alloy was $64.5{\mu}m,\;57.3{\mu}m$ and $46.9{\mu}m$ respectively. For Mn content of the alloy melts at constant 0.45wt.%Fe content was 0.30wt.%, 0.50wt.% and 0.70wt.%, thickness of soldered layer of each alloy was $66.1{\mu}m,\;57.3{\mu}m$ and $48.3{\mu}m$ respectively.