• 제목/요약/키워드: Si Content

검색결과 1,966건 처리시간 0.031초

Effect of Silicon Application on Growth Response of Alfalfa Seedlings Grown under Aluminum Stress in Pots

  • Yoon, Il-Kyu;Kim, Min-Jun;Min, Chang-Woo;Khan, Inam;Lee, Byung-Hyun
    • 한국초지조사료학회지
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    • 제41권3호
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    • pp.162-167
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    • 2021
  • Aluminum (Al) stress in acidic pH is known to decrease the growth and productivity of alfalfa. However, not much is known about how the application of silicon (Si) affects the Al stress response in alfalfa. This study was conducted to evaluate the effect of exogenous application of Si on the growth of alfalfa seedlings exposed to Al stress in pots. Alfalfa seedlings grown in pots for 2 weeks were treated either Al stress (pH 4.0, 0.2 mM Al) or Al stress + Si (1 mM) for 5 days, lengths and biomass of shoot and root, and chlorophyll and carotenoid contents in leaf tissues were analyzed respectively. Al stress treatment inhibited shoot and root growth, and decreased fresh and dry weights, and chlorophyll content in leaves, but increased carotenoid content. In contrast, when alfalfa seedlings treated with Al stress combined with Si, delayed growth caused by Al stress of shoot and root of alfalfa seedlings was restored, dry weight was increased and chlorophyll content of leaf tissue was increased, but carotenoid content was decreased. These results suggest that Si has a function of alleviating Al toxicity in alfalfa, of which it exhibits a mitigating effect by a function that overlaps with some of the intracellular functions of carotenoids.

경북 일부 어린이급식소에서 제공되는 간식의 섭취형태 및 당 함량 조사 (Investigation of Intake Patterns and Sugar Content of Snacks Provided at some Children's Cafeterias in Gyeongbuk)

  • 심현미;이미정;박세미;배미현;이자영;유선일;이경아
    • 급식외식위생학회지
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    • 제2권1호
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    • pp.51-57
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    • 2021
  • The purpose of this study was to analyze the amount of sugar from the afternoon snack menu of childcare facilities in Gyeongsangbuk-do. The amount of sugar was analyzed for afternoon snacks provided by childcare facilities between March and April 2016. The snacks provided were the same for processed and non-processed foods at 50.0% respectively. White milk accounted for the largest portion with 26.4%, followed by fruits with 19.9% and grains (sweet potatoes, rice cakes, etc.). It has been confirmed that the larger the facility, the lower the frequency of provision of non-processed foods, and the higher the provision of processed foods (p<0.05). Snacks served as non-processed foods showed the highest frequency of fruits and sweet potatoes. On the other hand, processed foods provided many sugar-rich products, such as liquid yogurt, hot cakes, and cereal, excluding white milk. The average sugar content was highest in processed milk products (13.9 g), followed by white milk (8.6 g), bread and snacks (8.0 g), other (4.6 g), and mixed grains (1.6 g). Of the total 216 snacks, banana flavored milk had the highest sugar content of 27.0 g, followed by strawberry milk (15.0 g) and castella (21.6 g). The findings are expected to be used as basic data for choosing the right snacks provided by childcare facilities and practicing reducing sugar intake.

질화규소 세라믹의 유전 및 기계적 특성 제어에 관한 연구 (Tailoring the Dielectric and Mechanical Properties of Si3N4 Ceramics)

  • 이승준;용석민;박진우;최재호;백승수
    • 한국군사과학기술학회지
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    • 제21권6호
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    • pp.760-766
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    • 2018
  • The present study investigates the effect of PMMA and BN content on microstructure, mechanical and dielectric properties of silicon nitride($Si_3N_4$) ceramics in $Y_2O_3-Al_2O_3$ additive system. The total additive content was fixed at 8 wt.% and the amount of PMMA varies from 0 to 40 wt.% and BN varies from 0 to 36 wt.%, respectively. The crystalline phases of the samples were determined by X-ray diffraction analysis. All the sintered sample shows complete transformation of ${\alpha}$ to ${\beta}-Si_3N_4$ during the sintering process indicated that the phase transformation was unaffected by the PMMA or BN content. However, the microstructure shows that the residual porosity increased with increasing PMMA and BN content. In addition, the flexural strength and the dielectric constant decrease with addition of PMMA and BN due to the residual porosity. This article provides empirical study of design parameters for $Si_3N_4$-based radome materials.

제천규석으로부터 SiC 및 $SiC-Si_3N_4$계 분말 합성 (Syntheses of SiC and $SiC-Si_3N_4$ Powder from Jecheon Quartz)

  • 이홍림;배철훈;문준화
    • 한국세라믹학회지
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    • 제23권1호
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    • pp.67-73
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    • 1986
  • SiC and $SiC-Si_3N_4$ powder were synthesized via the carbiding and carbiding-nitriding reaction of Jecheon quartz respectively using graphite as a reducing agent. $\beta$-SiC+($\alpha$+$\beta$)-$Si_3N_4$ composite was obtained by the carbiding-nitriding reaction of Jecheon quartz-graphite mixture at 1, 35$0^{\circ}C$ in $H_2$ atmosphere. $\beta$-SiC+($\alpha$+$\beta$)-$Si_3N_4$ composite was obtained by the carbidint-nitriding reaction of Jecheon quartz-graphite mixture at 1, 35$0^{\circ}C$ in $N_2-H_2$ atmosphere. The ratio of $\beta$-SiC+($\alpha$+$\beta$)-$Si_3N_4$ content in a produced composite could be controlled by adjusting the reaction time and gaseous mixture.

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싸이클로헥센 증기 공정에 의한 산소량이 적은 실리콘카바이드 섬유의 개발 (Development of Polymer-derived Silicon Carbide Fiber with Low Oxygen Content Using a Cyclohexene Vapor Process)

  • 윤병일;최우철;김명주;김재성;김정일;강홍구
    • 한국군사과학기술학회지
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    • 제20권5호
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    • pp.620-632
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    • 2017
  • A chemical vapor curing method(CVC) was developed to cure polycarbosilane(PCS) fibers by using cyclohexene vapour as a non-oxygen active reactant, instead of air in oder to prepare the silicon carbide(SiC) fiber with low oxygen content. A cross-linked PCS fibers by cyclohexene vapor showed a completely different variation in IR spectra in comparison to the air-cured PCS fiber. CVC method resulted in less than 3 wt% in oxygen content. In this experiment conditions, The average tensile strength and modulus of SiC fiber obtained by CVC had 1995 MPa and 183 GPa respectively, which is higher than that of SiC fiber prepared by air-curing process.

투명 결정화 유리에 관한 연구 -Li2O-Al2O3-SiO2계 조성에 관하여- (Studies on Transparently Crystallized Glass -On Li2O-Al2O3-SiO2 Composition-)

  • 박용완;김건은;연석주;조중희
    • 한국세라믹학회지
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    • 제26권3호
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    • pp.315-322
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    • 1989
  • Li2O-Al2O3-SiO2 system glasses contained P2O5, TiO2 and ZrO2as the nucleating agents were melted and formed. The glass was subsequently heated first to nucleate and then to grow the crystals. At constant nucleating agent content the base glass compositions were varied and the influences of these variations on the crystallization behaviour were investigated. The study was made by measurement of thermal expansion coefficient, differential thermal analysis, X-ray diffraction analysis, scanning electron microscope observation and transmission measurement of crystallized glass specimen in visible region. It was shown that the content of crystalline phase decreased with increasing SiO2 content as well as decresing Li2O in the base glass compositions. As the result of X-ray diffrection analysis, the major crystal was $\beta$-quartz solid solution. The degree of crystallinity which was calculated using the noncrystalline scattering methods increased in S-shape with increasing heat treatment time. This change was similar to that in thermal expansion coefficient. The transmissions of 5mm thick samples were 80-90% in visible ray region.

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Plasma Resistance and Etch Mechanism of High Purity SiC under Fluorocarbon Plasma

  • Jang, Mi-Ran;Paek, Yeong-Kyeun;Lee, Sung-Min
    • 한국세라믹학회지
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    • 제49권4호
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    • pp.328-332
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    • 2012
  • Etch rates of Si and high purity SiC have been compared for various fluorocarbon plasmas. The relative plasma resistance of SiC, which is defined as the etch rate ratio of Si to SiC, varied between 1.4 and 4.1, showing generally higher plasma resistance of SiC. High resolution X-ray photoelectron analysis revealed that etched SiC has a surface carbon content higher than that of etched Si, resulting in a thicker fluorocarbon polymer layer on the SiC surface. The plasma resistance of SiC was correlated with this thick fluorocarbon polymer layer, which reduced the reaction probability of fluorine-containing species in the plasma with silicon from the SiC substrate. The remnant carbon after the removal of Si as volatile etch products augments the surface carbon, and seems to be the origin of the higher plasma resistance of SiC.

초미립 SiC가 첨가된 질화규소에서 미세구조에 미치는 Bedding의 영향 (Effect Of Bedding on the Microstructure of Si3N4 with Ultrafine SiC)

  • 이홍한;김득중
    • 한국분말재료학회지
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    • 제10권1호
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    • pp.57-62
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    • 2003
  • The effect of bedding on the microstructure of $Si_3N_4$ added with ultra-fine SiC was investigated. The bedding and the addition of ultra-fine SiC effectively inhibited grain growth of $Si_3N_4$ matrix grain. The microstructures of the specimens sintered with bedding powder consisted of fine-grains as compared with the specimens sintered without bedding powder. In addition, the grain size and the difference of grain size between the specimens sintered with bedding and without bedding was reduced with increasing SiC content. Some ultra-fine SiC particles were trapped in the $Si_3N_4$ grains growed. The number of SiC particles trapped in the $Si_3N_4$ grains increased with increasing the grain growth. When ultra-fine SiC particles were added in the $Si_3N_4$ ceramics, the strength was improved but the toughness was decreased, which was considered to be resulted from the decrease of the grain size.

질화규소 세라믹스의 미세조직 형성에 미치는 Seed 첨가의 영향 (Effect of Seeding on Microstructural Development of Silicon Nitride Ceramics)

  • 이창주
    • 한국분말재료학회지
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    • 제5권2호
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    • pp.133-138
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    • 1998
  • The effect of $\beta$-$Si_3N_4$ seeding on microstructural development of silicon nitride based materials has been investigated. In particular, to observe more distinctly the abnormal grain growth in pressureless sintering, fine $\alpha$-$Si_3N_4$(mean particle size: 0.26 ${\mu}m$) powder classified by sedimentation method was used. It was possible to prepare silicon nitride with abnormally grown grains under low nitrogen pressure of 1 atm thanks to the heterogeneous nucleation on $Si_3N_4$ seed particles. The size and morphology of silicon nitride grains were strongly influenced by the presence of $\beta$-$Si_3N_4$ seed and overall chemical composition. For specimens with initially low $\beta$-content, the large grains grew without a significant impingement by other large grains. On the contrary, for specimens with initially high $\beta$-content, steric hindrance was effective. The resulting microstructure was less inhomogeneous and characterized by unimodal grain size distribution.

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Effect of Silicon on the Fracture Characteristics of Austempered Ductile Iron

  • Kang, In-Chan
    • 한국주조공학회지
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    • 제12권1호
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    • pp.25-31
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    • 1992
  • The effects of Si and austempering temperature on the fracture characteristics and the microstructures of austempered ductile irons were investigated. As Si content increased from 2.28% to 3.0%, the precipitation of carbides during bainitic transformation and was suppressed the amount of retained austenite increased resulting in the increase in the fracture toughness. It is believed that the high Si limited the formation of martensite in the microstructure and minimized the segregation of the other elements at cell boundaries. But in samples with too high Si content as 3.3%, the formation of islands of free ferrite in the bainitic structures was observed and the fracture toughness was measured to have degraded.

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