• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.459-459
• /
• 2013

Si (111) 기판 위에 plasma assisted molecular beam epitaxy 법으로 Si과 Mg doping된 GaN 나노막대를 각 각 성장하고 나노막대의 모양과 광학적 특성을 조사하였다. Si이 doping된 GaN 나노막대는 biaxial m-plane 방향의 변화로 별 모양을 갖는 것을 관찰하였고 Mg doping된 GaN 나노막대의 지름은 줄어드는 것을 scanning electron microscopy로 확인하였다. 본 연구에서는 이러한 변화의 원인을 stress 때문으로 보고 x-ray diffraction과 raman scattering 측정을 통하여 구조적 변화를 조사하였다. 또한, stress에 의한 GaN 나노막대의광학적 특성 변화를 photoluminescence을 통하여 조사하였다. Doping한 GaN 나노막대의 특성조사를 통해 GaN 나노막대 성장 시 발생되는 stress의 영향을 이해하는데 중요한 정보를 제공할 것이다.

• Journal of the Korean Ceramic Society
• /
• v.33 no.9
• /
• pp.985-994
• /
• 1996

The initiation and growth of $\alpha$-Al2O3/metal composites by the directed oxidation of molten commercial AlZnMg-alloy at 1223-1423K were investigated. Spontaneous bulk growth did not occur on the alloy alone. but the uniform initiation and growth of the composite were obtained by putting a thin layer of SiO2 particles on the surface of the alloy. Without SiO2 the external surface of the oxide layer was convered by MgO and MgAl2O4. But with the SiO2 reaction initiate the porous ZnO layers were found on the growth surface. The higher process temperature yielded a lower metal content. The oxidation product of $\alpha$-Al2O3 was found to be oriented with c-axis parallel to th growth direction. The growth rates increased with temperature and the apparent activation energy was 111.8 kJ/mol.

• Journal of the Korean Ceramic Society
• /
• v.37 no.4
• /
• pp.376-380
• /
• 2000

Carbon nanofibers with an average diameter of 100nm were reacted with SiO vapor generated from a mixture of Si and SiO2 to produce silicon carbide nanofibers at temperature ranging 1200∼1500$^{\circ}C$ under vacuum. The nanofiber reacted at 1200$^{\circ}C$ for two hours consisted of silicon carbide with an average crystallite size of 10-20nm, amorphous silica and a significant amount of unreacted carbon. The surface area of silicon carbide nanofiber, obtained after removal of amorphous silica and unreacted carbon from converted carbon nanofibers at 1200$^{\circ}C$, was as high as 150㎡/g. With increasing reaction temperature to 1500$^{\circ}C$, the surface area was decreased to 14㎡/g. Growth of SiC crystallite size with increasing conversion temperature of carbon nanofiber was confirmed from Scherrer formula using the (111) diffraction line and TEM images of converted carbon nanofibers.

• Journal of the Korean Ceramic Society
• /
• v.33 no.7
• /
• pp.761-770
• /
• 1996

Silicon carbide (SiC) films were deposited by low pressure chemical vapor deposition (LPCVD) using MTS (CH3SICl3) in a hydrogen atmosphere onto graphite substrates. Depletion effects of reactants which usually occur in the hot wall horizaontal reactor were increased with deposition temperature and pressure. Below 50 torr of total pressure (111) plane was preferenctially grown irrespectrive of deposition temperature and deposition site. Over 50 torr of total pressure however (220) plane was preferentially deposited under 130$0^{\circ}C$ and at inlet site. The surface morphologies of SiC films were uniform at all deposition sites under low pressure but greatly changed with pressure. It shows that a facet structure which was formed above 125$0^{\circ}C$ played an important role in the changed of preferred orientation and surface roughness.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.08a
• /
• pp.266.2-266.2
• /
• 2013

According to advanced nanotechnology, the nanostructured materials with various kinds and shape are synthesized easily or produced by process. Recently, researches about interaction between the nanostructured materials and biological system have been progressed actively. The surface topography may influence cellular responses, for example cell adhesion, cell morphology. In this work, we synthesized vertically aligned silicon nanowires (SiNWs) on the Au-covered Si(111) wafer by chemical vapor deposition (CVD) method. We accomplished to control of the SiNWs diameter by regulating thickness of Au film such as 1 nm and 10 nm. These substrates did not isolate cells and just provided surface topography for cell culture. Human Embryonic Kidney 293T cells (HEK 293T cells) were cultured on these substrates for 2 days. We studied the nanotopographical effects on cell morphology, adhesion, and growth which are evaluated on each SiNWs substrate comparing bare glass as control.

• Journal of the Korean institute of surface engineering
• /
• v.38 no.4
• /
• pp.137-143
• /
• 2005

CrSiN coatings of stepwise changing Si concentration were deposited on stainless steel by closed field unbalanced magnetron sputtering (CFUBM) system. Microstructure of the films due to the Si concentration is measured by XRD. The corrosion behavior of CrSiN coatings in deaerated $3.5\%$ NaCl solution was investigated by potentiodynamic test, electrochemical impedance spectroscopy (EIS) and surface analyses. The microstructure of CrSiN film depends on the Si concentration. When Si/(Cr+si) was under $11.7\%$, preferred orientation is defined at CrN(220), CrN(311) and $Cr_2N(111).$ The results of potentiodynamic polarization tests showed that the corrosion current density and porosity decreased with increasing Si/(Cr+si) ratio. EIS measurements showed that the corrosion resistance of Si-bearing CrN was improved by phase transformation of the film, which leads to increase of pore resistance and charge transfer resistance. At the Si(Cr+si) ratio of 20, the Si-bearing CrN possesses the best corrosion resistance due to the highest pore resistance and charge transfer resistance.

• Journal of the Korean institute of surface engineering
• /
• v.36 no.3
• /
• pp.234-241
• /
• 2003

SiC nanorod was synthesized directly on Si substrate using hexamethyldisilabutane and Fe catalyst with (111) direction. Fe acted a liquid catalyst at growth condition. Grown SiC nanorod has about 30nm diameter and $5{\mu}m$ length. SiC nanorod growth was divided by trro regions with diameter distribution. This diameter distribution were occurred by surface deposition at as - grown nanorod's surface by limitation of growth rate. At higher temperature, these division not occurred. Growth temperature and flow rates affected diameter and morphology of nanorods. With increasing flow rate of source gas, nanorod's diameter increased because of deactivation effect. Case of the increasing temperature, growth rate increased so deactivation did not occurred.

• Bulletin of the Korean Chemical Society
• /
• v.31 no.1
• /
• pp.104-111
• /
• 2010

The heterogeneous electron transfer at $SiMo_{12}O_{40}^{4-}$ monolayers on GC, HOPG, and Au electrode surfaces are investigated using cyclic voltammetric and electrochemical impedance spectroscopic (EIS) methods. The electron transfer of negatively charged $Fe(CN)_6^{3-}$ species is retarded at $SiMo_{12}O_{40}^{4-}$-modified electrode surfaces, while that of positively charged $Ru(NH_3)_6^{3+}$species is accelerated at the modified surfaces. This is due to the electrostatic interactions between $SiMo_{12}O_{40}^{4-}$ layers on surfaces and charged redox species. The electron transfer kinetics of a neutral redox species, 1,1‘-ferrocenedimethanol (FDM), is not affected by the modification of electrode surfaces with $SiMo_{12}O_{40}^{4-}$, indicating the $SiMo_{12}O_{40}^{4-}$ monolayers do not impart barriers to electron transfer of neutral redox species. This is different from the case of thiolate SAMs which always add barriers to electron transfer. The effect of $SiMo_{12}O_{40}^{4-}$ layers on the electron transfer of charged redox species is dependent on the kind of electrodes, where HOPG surfaces exhibit marked effects. Possible mechanisms responsible for different electron transfer behaviors at $SiMo_{12}O_{40}^{4-}$ layers are proposed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.05a
• /
• pp.589-592
• /
• 1999

This paper describes direct $\mu$C-Si/CaF$_2$/glass thin film growth by RPCVD system in a low temperature for thin film transistor (TFT), photovoltaic devices. and sensor applications. Experimental factors in a low temperature direct $\mu$ c-Si film growth are presented in terms of deposition parameters: SiH$_4$/H$_2$ ratio, chamber total pressure, substrate temperature, rf power, and CaF$_2$ buffer layer. The structural and electrical properties of the deposited films were studied by means of Raman spectroscopy, I-V, L-I-V, X-ray diffraction analysis and SEM. we obtain a crystalline volume fraction of 61%, preferential growth of (111) and (220) direction, and photosensitivity of 124. We achieved the improvement of crystallinity and electrical property by using the buffer layers of CaF$_2$ film.

• Korean Journal of Materials Research
• /
• v.7 no.6
• /
• pp.510-516
• /
• 1997

반응성RF 마그네트론 스퍼터링 법으로 상온에서 c-축으로 우선 배향된 AIN 박막을 여러 기판 위에 증착하였다. SiO$_{2}$/Si, Si$_{3}$N $_{4}$Si, Si(100), Si(111)그리고 $\alpha$-AI$_{2}$O$_{3}$(0001) 기판에서 AIN(0002)로킹커브 피크의 표준편차는 각각 2.6˚, 3.1˚2.6˚, 2.5˚ 그리고 2.1˚ 의 값을 나타내었다. $\alpha$-AI$_{2}$O$_{3}$(0001) 기판에 증착된 AIN박막은 epitaxial 성장을 나타내었다. Si기판에 증착된 AIN박막에서 측정된 비저항과 1MHz 주파수에서 측정된 유전상수의 값은 각각 $10^{11}$Ωcm와 9.5였다. IDT/AIN/$\alpha$-AI$_{2}$O$_{3}$(0001)구저를 갖는 지연선 소자의 표면 탄성과 특성을 측정하였다. 상 속도, 전기기계 결합계수 그리고 전파손실은 H/λ가 0.17-0.5 범위에서 각각 5448-5640m/s, 0.13-0.17% 그리고 0.41-0.64dB/λ의 값을 나타내었다.다.