• 한국표면공학회지
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• 제34권5호
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• pp.414-420
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• 2001

A 30-kV plasma immersion ion implantation setup (P $I^3$) has been equipped with a self-developed 6'-magnetron to perform hard coatings with enhanced adhesion by P $I^3$D(P $I^3$ assisted deposition) process. Using ICP source with immersed Ti antenna and reactive magnetron sputtering of Ti target in $N_2$/Ar ambient gas mixture, the TiN films were prepared on Si substrates at different pulse bias and ion-to-atom arrival ratio ( $J_{i}$ $J_{Me}$ ). Prior to TiN film formation the nitrogen implantation was performed followed by deposition of Ti buffer layer under A $r^{+}$ irradiation. Films grown at $J_{i}$ $J_{Me}$ =0.003 and $V_{pulse}$=-20kV showed columnar grain morphology and (200) preferred orientation while those prepared at $J_{i}$ $J_{Me}$ =0.08 and $V_{pulse}$=-5 kV had dense and eqiaxed structure with (111) and (220) main peaks. X-ray diffraction patterns revealed some amount of $Ti_{x}$ $N_{y}$ in the films. The maximum microhardness of $H_{v}$ =35 GN/ $M^2$ was at the pulse bias of -5 kV. The P $I^3$D technique was applied to enhance wear properties of commercial tools of HSS (SKH51) and WC-Co alloy (P30). The specimens were 25-kV PII nitrogen implanted to the dose 4.10$^{17}$ c $m^{-2}$ and then coated with 4-$\mu\textrm{m}$ TiN film on $Ti_{x}$ $N_{y}$ buffer layer. Wear resistance was compared by measuring weight loss under sliding test (6-mm $Al_2$ $O_3$ counter ball, 500-gf applied load). After 30000 cycles at 500 rpm the untreated P30 specimen lost 3.10$^{-4}$ g, and HSS specimens lost 9.10$^{-4}$ g after 40000 cycles while quite zero losses were demonstrated by TiN coated specimens.s.

• Advances in materials Research
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• 제13권3호
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• pp.161-171
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• 2024

This study aimed to investigate the effect of physicochemical properties and mix ratios of iron ore (oxide feed): coke (reductant) on the carbothermic reductions of iron ore. Coke size was fixed at ≤63 ㎛ while iron ore size varied between 150-63 ㎛ and ≤63 ㎛ respectively. Mix ratios were changed from 100:0 (reference) to 80:20 and 60:40 while the temperature, heating rate and soaking duration in muffle furnace were fixed at 1100 ℃, 10 ℃/min and 1 hour. Particle size analyzer, XRF, CHNS and XRD analyses were used for determination of raw feed characteristics. The occurrence of phase transformations from various forms of iron oxides to iron during the carbothermal reductions were identified through XRD profiles and supported with weight loss (%). XRF analysis proved that iron ore is of high grade with 93.4% of Fe₂O₃ content. Other oxides present in minor amounts are 2% Al₂O₃ and 1.8% SiO₂ with negligible amounts of other compounds such as MnO, K₂O and CuO. Composite pellet with finer size iron particles (≤63 ㎛) and higher carbon content of 60:40 exhibited 45.13% weight lost compared to 32.30% and 3.88% respectively for 80:20 and 100:0 ratios. It is evident that reduction reactions can only occur with the presence of coke, the carbon supply. The small weight loss of 3.88% at 100:0 ratio occurs due to the removal of moisture and volatiles and oxidations of iron ore. Higher carbon supply at 60:40 leads into better heat and mass transfer and diffusivity during carbothermic reductions. Overall, finer particle size and higher carbon supply improves reactivity and gas-solid interactions resulting in increased reductions and phase transformations.

• 자원환경지질
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• 제55권4호
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• pp.317-338
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• 2022

근대건축으로 알려진 조선통감부 자리의 콘크리트와 토관 및 벽돌을 대상으로 3시기로 세분하여 물리화학적 특성과 평가를 검토하였다. 콘크리트는 모두 비슷한 가비중과 흡수율을 보였으며 다량의 골재와 석영, 장석, 방해석 및 포틀란다이트가 검출되었다. 벽돌의 공극률은 1907년의 것이 1910년 및 1950년 벽돌보다 높았다. 토관도 유사하나 초기의 것이 보다 치밀한 것으로 나타났다. 벽돌과 토관은 암적색에서 암갈색을 띠며 많은 균열과 기공이 관찰되나, 상대적으로 토관의 기질이 균질하다. 벽돌에서는 석영, 장석 및 적철석이 검출되었으며, 토관에서는 석영 및 장석과 뮬라이트가 확인되는 것으로 보아, 모두 1,000~1,100℃의 소성온도를 거친 것으로 해석된다. 콘크리트는 유사한 CaO 함량을 보이나, 벽돌과 토관은 1907년 시료에서 SiO₂는 낮고 Al₂O₃가 높다. 그러나 이들은 유사한 지구화학적 거동특성을 갖는 등 성인적 동질성이 높다. 콘크리트 기초의 초음파속도와 반발경도는 잔존상태에 따라 다르나 물성은 다소 낮았다. 이를 일축압축강도로 환산하면 1차 증축구역이 평균 45.30 및 46.33 kgf/cm²로 가장 높고, 2차 증축구역이 가장 낮은 평균치(20.05 및 24.76 kgf/cm²)를 보였다. 특히 CaO 함량과 흡수율이 작을수록 초음파속도와 반발경도가 높았다. 조선통감부 건축에 활용한 콘크리트는 시기별로 비슷한 배합특성과 비교적 일정한 규격이 있었던 것으로 보인다. 벽돌과 토관은 거의 동일한 점토질 원료를 사용하여 유사한 제작과정을 거친 것으로 해석된다.

• 자원환경지질
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• 제40권2호
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• pp.223-236
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• 2007

한반도 남동부에 위치한 경상분지와 일본의 서남내대는 중국 남동부에서부터 러시아 추콧(Chukot) 반도를 잇는 코딜레라형(Cordilleran-type)조산벨트의 동쪽 확장부로서 백악기와 제3기에 걸쳐 관입한 I-형의 칼크-알칼리 계열 화강암류가 광범위하게 분포하고 있으며, 이들은 이자나기(Izanagi)판의 섭입과 관련된 화성활동의 산물로 생각된다. 고지리적 위치, 고지구조적 환경 및 관입 시기$(120\sim100Ma)$가 진동화강암체와 유사한 일본 서남내대 큐슈 지역의 시라이시노(Shiraishino) 화강섬록암 및 산요벨트의 탐바(Tamba)화강암류는 높은 $SiO_2,\;Al_2O_3$, Sr, Sr/Y, La/Yb 및 낮은 Y, Yb 함량으로 특징지어지는 아다카이트(adakite)로 보고되었다. 진동화강암의 주성분원소$(Al_2O_3,\;K_2O,\;Na_2O,\;MgO)$ 및 미량원소(Sr, Y, Rb) 함량 범위는 일본 서남내대에 분포하는 백악기 아다카이트질 화강암의 범주에 포함되고, 아다카이트의 판별도로 가장 널리 이용되는 Sr/Y vs. Y 관계도에서 경상분지 내의 일반적인 백악기 화강암류가 호상열도형ADR(Island Arc ADR) 영역에 분포하는 것과 명확히 구분되어 진동화강암류는 아다카이트 범주에 점시된다. 진동화강암의 희토류원소 패턴은 경희토류원소가 부화되어$[(La/Yb)c=3.6\sim13.8]$ 나타난다. Rb-Sr 전암연대는 $114.6{\pm}9.1Ma$이며 $^{87}Sr/^{86}Sr$의 초생값은 0.70457로, 진동화강암체는 백악기 초기에 관입한 화강암체로서 근원물질이 상부맨틀과 밀접한 연관이 있음을 지시한다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.137-137
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• 2009

Thin-film transistors (TFTs) that can be prepared at low temperatures have attracted much attention due to the great potential for flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited by low field effect mobility or rapidly degraded after exposing to air in many cases. Another approach is amorphous oxide semiconductors. Amorphous oxide semiconductors (AOSs) have exactly attracted considerable attention because AOSs were fabricated at room temperature and used lots of application such as flexible display, electronic paper, large solar cells. Among the various AOSs, a-IGZO was considerable material because it has high mobility and uniform surface and good transparent. The high mobility is attributed to the result of the overlap of spherical s-orbital of the heavy pest-transition metal cations. This study is demonstrated the effect of thickness channel layer from 30nm to 200nm. when the thickness was increased, turn on voltage and subthreshold swing were decreased. a-IGZO TFTs have used a shadow mask to deposit channel and source/drain(S/D). a-IGZO were deposited on SiO2 wafer by rf magnetron sputtering. using power is 150W, working pressure is 3m Torr, and an O2/Ar(2/28 SCCM) atmosphere at room temperature. The electrodes were formed with Electron-beam evaporated Ti(30nm) and Au(70nm) structure. Finally, Al(150nm) as a gate metal was evaporated. TFT devices were heat treated in a furnace at $250^{\circ}C$ in nitrogen atmosphere for an hour. The electrical properties of the TFTs were measured using a probe-station to measure I-V characteristic. TFT whose thickness was 150nm exhibits a good subthreshold swing(S) of 0.72 V/decade and high on-off ratio of 1E+08. Field effect mobility, saturation effect mobility, and threshold voltage were evaluated 7.2, 5.8, 8V respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.344-344
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• 2014

Transparent amorphous oxide semiconductors such as a In-Ga-Zn-O (a-IGZO) have advantages for large area electronic devices; e.g., uniform deposition at a large area, optical transparency, a smooth surface, and large electron mobility >10 cm2/Vs, which is more than an order of magnitude larger than that of hydrogen amorphous silicon (a-Si;H).1) Thin film transistors (TFTs) that employ amorphous oxide semiconductors such as ZnO, In-Ga-Zn-O, or Hf-In-Zn-O (HIZO) are currently subject of intensive study owing to their high potential for application in flat panel displays. The device fabrication process involves a series of thin film deposition and photolithographic patterning steps. In order to minimize contamination, the substrates usually undergo a cleaning procedure using deionized water, before and after the growth of thin films by sputtering methods. The devices structure were fabricated top-contact gate TFTs using the a-IGZO films on the plastic substrates. The channel width and length were 80 and 20 um, respectively. The source and drain electrode regions were defined by photolithography and wet etching process. The electrodes consisting of Ti(15 nm)/Al(120 nm)/Ti(15nm) trilayers were deposited by direct current sputtering. The 30 nm thickness active IGZO layer deposited by rf magnetron sputtering at room temperature. The deposition condition is as follows: a rf power 200 W, a pressure of 5 mtorr, 10% of oxygen [O2/(O2+Ar)=0.1], and room temperature. A 9-nm-thick Al2O3 layer was formed as a first, third gate insulator by ALD deposition. A 290-nm-thick SS6908 organic dielectrics formed as second gate insulator by spin-coating. The schematic structure of the IGZO TFT is top gate contact geometry device structure for typical TFTs fabricated in this study. Drain current (IDS) versus drain-source voltage (VDS) output characteristics curve of a IGZO TFTs fabricated using the 3-layer gate insulator on a plastic substrate and log(IDS)-gate voltage (VG) characteristics for typical IGZO TFTs. The TFTs device has a channel width (W) of $80{\mu}m$ and a channel length (L) of $20{\mu}m$. The IDS-VDS curves showed well-defined transistor characteristics with saturation effects at VG>-10 V and VDS>-20 V for the inkjet printing IGZO device. The carrier charge mobility was determined to be 15.18 cm^2 V-1s-1 with FET threshold voltage of -3 V and on/off current ratio 10^9.

• 지질공학
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• 제13권4호
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• pp.429-444
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• 2003

국내 대리석류의 산출 및 물리화학적 특성을 지질시대별로 분류하여 규명하였다. 선별된 시료에 대한 지질시대별 물성과 주원소 화학성분의 변화경향과 상관성을 해석하였다. 물성중에서 비중, 흡수율과 공극율은 선캠브리아기, 오오도비스기, 시대미상과 캠브리아기의 순으로 그 값이 점차 감소한다. 흡수율 대공극율은 거의가 뚜렷한 정의 경향을 이룬다. 압축강도 대 인장강도, 그리고 마모경도 대 압축강도는 대부분 정의 경향을 각각 이룬다. 압축강도는 선캠브리아기 1,106 $kg/\textrm{cm}^2$, 시대미상 935 $kg/\textrm{cm}^2$, 캠브리아기 $1,162{\;}kg/\textrm{cm}^2$ 그리고 오오도비스기 $1,560{\;}kg/\textrm{cm}^2$의 값을 각각 가진다. 인장강도는 $79{\;}kg/\textrm{cm}^2,{\;}82{\;}kg/\textrm{cm}^2,{\;}93{\;}kg/\textrm{cm}^2,{\;}96{\;}kg/\textrm{cm}^2$의 값을 각각 가져 지질시대가 오래된 것일수록 대체로 감소하는 경향을 보인다. 화학성분중에서 $SiO_2$는 $Al_2O_3,{\;}Fe_2O_{3(t)}와{\;}Na_2O+K_2O$에 대하여 대체로 정의 경향을 이룬다. MgO/CaO는 선캠브리아기 0.31, 시대미상 0.30, 캠브리아기 0.03, 오오도비스기 0.08을 가져 고기의 지질시대에서 그 비 값이 뚜렷이 증가한다. MgO는 CaO와 뚜렷한 부의 경향을 이루며, 이는 돌로마이트화작용에 의한 것으로 해석된다. 이들은 지질시대별로 방해석질 돌로마이트, 돌로마이트질 석회암, 석회암 그리고 돌로마이트질 석회암에 각각 해당한다.

• 한국토양비료학회지
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• 제10권1호
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• pp.69-74
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• 1977

토양생산력 증대(增大)를 위한 객토재료(客土材料)로서 Bentonite를 활용(活用)하고자 우리나라 동해안(東海岸)에 매장(埋藏)되어 있는 Bentonite를 수집(蒐集)하여 주요이화학적(主要理化學的) 점토광물학적(粘土鑛物學的) 조사(調査)를 하였든바 그 결과(結果)는 다음과 같다. 1. 우리나라의 Bentonite분포(分布)는 주(主)로 경남북(慶南北) 동해안(東海岸)에 국부적(局部的)으로 매장(埋藏)되어 있으며 Montmorillonite를 주광물(主鑛物)로 하고 있다. 2. Bentonite의 X선회절(線回折) 특성(特性)은 분말시료(粉末試料)에서 14~15, 4.4, $2.5{\AA}$, ethylene glycol처리(處理)에서 $15{\AA}$은 $17{\AA}$으로 완전(完全)히 이동(移動)되었다. 3. 공시(供試)된 시료중(試料中) 우량(優良) Bentonite로 인정(認定)되는 것은 산도(酸度)가 pH 7.0, CEC가 60~96me/100g 및 풍부(豊富)한 염기함량(鹽基含量)와 유효규산(有効珪酸)을 함유(含有)하고 있었다. 4. 공시시료중(供試試料中) 우량(優良) Bentonite는 다음 지역(地域)에 분포(分布)되어 있었다. 가. 경북(慶北) 영일군(迎日郡) 동해면(東海面) 도묘동(都卯洞) 나. 경북(慶北) 월성군(月城郡) 양남면(陽南面) 하서리(下西里) 법실골 다. 경북(慶北) 월성군(月城郡) 양북면(陽北面) 호암리(虎岩里) 라. 경남(慶南) 울주군(蔚州郡) 강동면(江東面) 산하리(山下里) 마. 경남(慶南) 울주군(蔚州郡) 강동면(江東面) 신현리(新峴里) 바. 강원도(江原道) 평창군(平昌郡) 평창면(平昌面) 용정리(龍頂里)

• 공업화학
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• 제17권3호
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• pp.235-242
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• 2006

Liquid phase alkylation of biphenyl (BP) was studied over large pore zeolites. Selective formation of the least bulky products, 4,4'-diisopropylbiphenyl (4,4'-DIPB) occurred only in the isopropylation of BP over some large pore molecular sieves. H-mordenites (MOR) gave the highest selectivity among them. The dealumination of MOR enhanced catalytic activity and the selectivity of 4,4'-DIPB because of the decrease of coke-deposition. Non-selective catalysis occurs on external acid sites over MOR with the low $SiO_2/Al_2O_3$ ratio because severe coke-deposition deactivates the acid sites inside the pores by blocking pore openings. The selectivity of DIPB isomers was changed with reaction temperature. Selective formation of 4,4'-DIPB was observed at moderate temperatures such as $250^{\circ}C$, whereas the decrease of the selectivity of 4,4'-DIPB occurred at higher temperatures as $300^{\circ}C$. However, 4,4'-DIPB was almost exclusive isomer in the encapsulated DIPB isomers inside the pores even at high temperatures. These decreases of the selectivity of 4,4'-DIPB are due to the isomerization of 4,4'-DIPB on the external acid sites. Some 12-membered molecular sieves, such as SSZ-24, MAPO-5 (M:Mg, Zn, Si), SSZ-31, and ZSM-12, which have straight channels, gave 4,4'-DIPB with moderate to high selectivity; however; SSZ-55, SSZ-42, and MAPO-36 (M: Mg, Zn) gave lower selectivity because of cages in 12-membered one dimensional channels. Three dimensional H-Y and Beta zeolites also yield 4,4'-DIPB in low yield because of their wide circumstances for the isopropylation of BP. The increasing the size of alkylating agent enhanced the shape-selective alkylaiton even for the zeolites, such as UTD-1. The ethylation of BP to ethylbiphenyls (EBPs) and diethylbiphenyls (DEBPs) over MOR was non-selective. The ethylation of BP to EBPs was controlled kinetically. However, there was difference in reactivity of EBPs and DEBPs for their further ethylation. 4-EBP was ethylated preferentially among the isomers, although the formation of 4,4'-DEBP was less selective. The least bulky 4-EBP and 4,4'-DEBP have the highest reactivity among EBPs and DEBPs for the ethylation to polyethylbiphenyls (PEBPs). These results show that the environments of MOR pores are too loose for shape selective formation of the least bulky isomers, 4-EBP and 4,4'-DEBP in the ethylation of BP, and that MOR pores have enough space for the further ethylation of 4,4'-DEBP.

• 한국환경보건학회지
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• 제36권2호
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• pp.108-117
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• 2010

In this study, ambient particulate matter ($PM_{2.5}$ and $PM_{10}$) levels were measured and their chemical and physical properties were characterized. Two sites in Gwangju were sampled once a month from December 2008 to November 2009. The annual mean concentrations of $PM_{2.5}$ and $PM_{10}$ were $26.9\;{\mu}g/m^3$ and $46.3\;{\mu}g/m^3$, respectively, in Nongseongdong and $26.1\;{\mu}g/m^3$ and $44.8\;{\mu}g/m^3$, respectively, in Duam-dong. $PM_{2.5}$ levels were 1.8 times higher than the USA Environmental Protection Agency (EPA) national ambient air quality standard for $PM_{2.5}$ ($15\;{\mu}g/m^3$). The average $PM_{2.5}/PM_{10}$ ratio of 0.58 suggested that $PM_{2.5}$ is a significant component of the ambient particle pollution. The order of concentration of metallic elements in $PM_{2.5}$ and $PM_{10}$ was Si > Al > Fe > Zn > Pb > Cu > Mn. Cd was not detected. The earth crustal enrichment factors for Cr, Cu, Pb and Zn in $PM_{2.5}$ were higher than those in $PM_{10}$. When the earth crustal enrichment factors for Cr, Cu, Pb and Zn were higher than 10, this suggested influence from anthropogenic sources. The soil contribution ratios for $PM_{2.5}$ and $PM_{10}$ were 11.3% and 16.4%, respectively, and were higher in the fall and winter. Anions (${SO_4}^{-2}$, ${NO_3}^-$, and $Cl^-$) comprise 28.7% of $PM_{2.5}$ and 21.4% of $PM_{10}$. The correlation coefficient of Zn-Fe, Mn-Cu, Fe-Cu and Fe-Mn in $PM_{2.5}$ was high in the sampling sites, and metallic elements were primarily from anthropogenic sources such as fuel combustion and vehicle emissions.