• Electrical & Electronic Materials
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• v.10 no.7
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• pp.706-712
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• 1997

AlN(Aluminium Nitride) thin films were prepared using by RF sputtering method on the Si(100) and Si(111) substrates as the parameters of the substrate temperature, RF power, sputtering duration and the $N_2$/Ar ratio and investigated by X-ray diffraction, IR spectrometry, n&k analyzer. For the Si(100) substrate, the AlN thin films of (101) orientation were obtained under the conditions of room temperature and the nitrogen of 60 vol.%. For the Si(111) substrate, the (002) AlN thin films were obtained under the nitrogen of 100 vol.%. In case of the thin film prepared in the condition of above 60 vol.% of the nitrogen, the average value of the surface roughness of the film was 151$\AA$. From the changes of the half widths of E$_1$[TO] phonon bands at the wavenumber of 680$cm^{-1}$ /, it were compared of the crystallinities of the films which were grown under the different conditions. The thicknesses of AlN films were decreased dramatically in the region of the nitrogen of 40~60 vol.%. Its due to the nitridation of the Al target surface and getting low of the sputtering yield by the $N_2$/Ar ratio being increased.

• Journal of the Korean Society of Industry Convergence
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• v.5 no.3
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• pp.209-212
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• 2002

The change of surface structures for the deposition of Sn, In on clean Si(111) surface is investigated as a function of surface coverage by RHEED system. For tin submonolayer films $7{\times}7$, ${\sqrt{3}}{\times}{\sqrt{3}}$ structures are observed depending on the coverage and substrate temperature. For indium submonolayer films $7{\times}7$, ${\sqrt{3}}{\times}{\sqrt{3}}$, ${\sqrt{31}}{\times}{\sqrt{31}}$, $1{\times}1$ structures are observed. We find that at substrate temperature of $500^{\circ}C$, ${\sqrt{3}}{\times}{\sqrt{3}}$ structure is formed at tin coverages of 0.2~0.4 ML and at indium coverages of 0.1~0.3 ML, respectively. From the desorption process, the desorption energies of Sn, In in ${\sqrt{3}}{\times}{\sqrt{3}}$ structure is observed to he 3.25 eV, 2.66eV, respectively.

• Journal of the Korean Ceramic Society
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• v.53 no.6
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• pp.647-651
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• 2016

SiC films were prepared on glassy carbon substrates by laser chemical vapor deposition under a high pressure of $10^4Pa$ using a diode laser (wavelength = 808 nm) and a polysilaethylene precursor. (111)-oriented SiC films were formed at a deposition temperature ($T_{dep}$) range of 1150 - 1422 K. At $T_{dep}=1262K$, the SiC film with a high Lotgering factor of above 0.96 showed an exhibited pyramid-like surface morphology and flower-like grains. The highest deposition rate ($R_{dep}$) was $220{\mu}m\;h^{-1}$ at $T_{dep}=1262K$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.111-114
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• 2000

Growth characteristics and microstructure of AlN thin films grown by plasma assisted molecular beam epitaxy on Si substrates have been investigated. Growing temperature and substrate orientation were chosen as major variables of the experiment. Reflection high energy electron diffraction (RHEED), X-ray diffraction (XRD), atomic force microscopy (AFM) and transmission electron microscopy/diffraction (TEM/TED) techniques were employed to characterize the microstructure of the films. On Si(100) substrates, AlN thin films were grown along the hexagonal c-axis preferred orientation at temperature range 850-90$0^{\circ}C$. However on Si(111), the AlN films were epitaxially grown with directional coherency in AlN(0001)/Si(111), AlN(1100)/Si(110), and AlN(1120)/Si(112) at 85$0^{\circ}C$ and the epitaxial coherencry seemed to be slightly distorted with increasing temperature. The microstructure of AlN thin films on Si(111) substrates showed that the films include a lot of crystal defects and there exist micro-gaps among the columns.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.10 no.9
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• pp.1663-1670
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• 2006

Single crystal Fe thin films were grown directly onto n-Si(111) substrates by pulsed electrodeposition. Cyclic Voltammogram(CV) indicated that the $Fe^{2+}/n-Si(111)$ interface shows a good diode behavior by forming a Schottky barrier. From Mott-Schottky (MS) relation, it is found that the flat-band potential of n-Si(111) substrate and equilibrium redox potential of $Fet^{2+}$ ions are -0.526V and -0.316V, respectively. The nucleation and growth kinetics at the initial reaction stages of Fe/n-Si(111) substraste was studied by current transients. Current transients measurements have indicated that the deposition process starts via instantaneous nucleation and 3D diffusion limited growth. After the more deposition, the deposition flux of Fe ions was saturated with increase of deposition time. from the as-deposited sample obtained using the potential pulse of 1.4V and 300Hz, it is found that Fe nuclei grows to three dimensional(3D) islands with the average size of about 100nm in early deposition stages. As the deposition time increases, the sizes of Fe nuclei increases progressively and by a coalescence of the nuclei, a continuous Fe films grow on the Si surface. In this case, the Fe films show a highly oriented columnar structure and x-ray diffraction patterns reveal that the phase ${\alpha}-Fe$ grows on the n-Si(111) substrates.

• Korean Journal of Materials Research
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• v.13 no.1
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• pp.1-5
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• 2003

Uniform polycrystalline $CoSi_2$layers have been grown in situ on a polycrystalline Si substrate at temperature near $625^{\circ}C$ by reactive chemical vapor deposition of cyclopentadienyl dicarbonyl cobalt, Co(η$^{5}$ -C$_{5}$ H$_{5}$ )(CO)$_2$. The growth behavior and thermal stability of $CoSi_2$layer grown on polycrystalline Si substrates were investigated. The plate-like CoSi$_2$was initially formed with either (111), (220) or (311) interface on polycrystalline Si substrate. As deposition time was increasing, a uniform epitaxial $CoSi_2$layer was grown from the discrete $CoSi_2$plate, where the orientation of the$ CoSi_2$layer is same as the orientation of polycrystalline Si grain. The interface between $CoSi_2$layer and polycrystalline Si substrate was always (111) coherent. The growth of the uniform $CoSi_2$layer had a parabolic relationship with the deposition time. Therefore we confirmed that the growth of $CoSi_2$layer was controlled by diffusion of cobalt. The thermal stability of $CoSi_2$layer on small grain-sized polycrystalline Si substrate has been investigated using sheet resistance measurement at temperature from $600^{\circ}C$ to $900^{\circ}C$. The $CoSi_2$layer was degraded at $900^{\circ}C$. Inserting a TiN interlayer between polycrystalline Si and $_CoSi2$layers improved the thermal stability of $CoSi_2$layer up to $900^{\circ}C$ due to the suppression of the Co diffusion.

• Proceedings of the Korean Vacuum Society Conference
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• 1994.02a
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• pp.9-9
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• 1994

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.71-71
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• 2010

Copper oxide thin films were deposited on the p-type Si(100) by r.f. magnetron sputtering as a function of different substrate temperature. The deposited copper oxide thin films were investigated by atomic force microscopy (AFM), scanning electron microscopy (SEM), spectroscopic ellipsometry (SE), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). The SEM and SE data show that the thickness of the copper oxide films was about 170 nm. AFM images show that the surface roughness of copper oxide films was increased with increasing substrate temperature. As the substrate temperature increased, monoclinic CuO (111) peak appeared and the crystal size decreased while the monoclinic CuO (-111) peak was independent on the substrate temperature. The oxidation states of Cu 2p and O 1s resulted from XPS were not affected on the substrate temperature. The contact angle measurement was also studied and indicated that the surface of copper oxide thin films deposited high temperature has more hydrophobic surface than that of deposited at low temperature.

• Journal of the Korean Vacuum Society
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• v.17 no.5
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• pp.387-393
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• 2008

Using a first-principles total-energy method, we investigate structural and energy changes on Ag/Si(111)$\sqrt{3}{\times}\sqrt{3}$($\sqrt{3}-Ag$ hereafter) as the number of the additional Ag adatoms increases. The Ag coverage varies from 0.02 to 0.14 ML. Most Ag adatoms occupy the ST site, which is the center of small triangles of the substrate Ag layer that is composed of small and large triangles. One of the interesting adsorption features is that the adatoms immerse below the substrate layer. The total energy calculations show that the clusters become the most stable when the number of Ag atoms is three. This three-Ag cluster becomes the building block of the $\sqrt{21}{\times}\sqrt{21}$ phase that shows a large surface conductivity. The simulated STM images show that the adatoms look dark in filled-state images while bright in empty-state images. This suggests that the adatoms donate their charge to the substrate. The simulated STM images agree well with the experimental images.

• Analytical Science and Technology
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• v.5 no.3
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• pp.303-308
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• 1992

Initial reactions of Ti and Si have been studied to examine the surface roughness of titanium silicide. Formation mechanism has been explored with in-situ measurement tools such as AES(Auger electron spectroscopy) and LEED (low energy electron diffraction). One or two monolayers of Ti films have been deposited in ultrahigh vacuum on atomically clean Si(111) substrates. Atomically clean Si substrates which are reconstructed $7{\times}7$ Si(111) have been obtained after in-situ heat cleaning in ultrahigh vacuum. Deposition of the films were monitored by a quartz cuystal oscillator and the Ti films were analyzed with in-situ AES and LEED. The in-situ measurements show that the initial reactions of Ti and Si occur at room temperature and form a disordered layer. At low temperatures($200^{\circ}C{\sim}300^{\circ}C$) intermixing of Ti and Si is detected by AES. Substrate $1{\times}1$ LEED patterns are displayed after $400^{\circ}C$ anneal. This indicates that the disordered layer has transformed to form an ordered surface. The reappearance of the $7{\times}7$ LEED pattern in observed with further high temperature anneals and indicates three dimensional titanium silicide island formation.