Analytical Science and Technology (분석과학)
- Volume 5 Issue 3
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- Pages.303-308
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- 1992
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- 1225-0163(pISSN)
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- 2288-8985(eISSN)
Initial Reactions of Ti on the Atomically Clean Si Substrates
초청정한 Si 기판 위에서 Ti의 초기 반응
- Jeon, Hyeongtag (Department of Metallurgical Engineering, Hanyang University) ;
- Nemanich, R.J. (Department of Physics and Materials Science and Engineering, North Carolina State Univ.)
- 전형탁 (한양대학교 공과대학 금속공학과) ;
- Received : 1992.08.28
- Published : 1992.09.25
Abstract
Initial reactions of Ti and Si have been studied to examine the surface roughness of titanium silicide. Formation mechanism has been explored with in-situ measurement tools such as AES(Auger electron spectroscopy) and LEED (low energy electron diffraction). One or two monolayers of Ti films have been deposited in ultrahigh vacuum on atomically clean Si(111) substrates. Atomically clean Si substrates which are reconstructed
Ti과 Si의 초기 반응이 Titanium Silicide의 표면 거칠기 (Surface roughness)를 고찰하기 위해 연구하였다. 형성기구는 In-situ AES와 LEED의 측정장비로 연구하였다. Ti의 하나나 두 원자층이 초고진공에서 원자적으로 깨끗한 Si 기판 위에 증착되었다. Reconstruction이 된