• Journal of the Microelectronics and Packaging Society
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• v.21 no.3
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• pp.67-71
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• 2014

An attempt to grow high quality GaN on silicon substrate using metal organic chemical vapor deposition (MOCVD), herein GaN epitaxial layers were grown on various Si(111) substrates. Thin Platinum layer was deposited on Si(111) substrate using sputtering, followed by thermal annealing to form Pt nano-clusters which act as masking layer during dry-etched with inductively coupled plasma-reactive ion etching to generate nano-patterned Si(111) substrate. In addition, micro-patterned Si(111) substrate with circle shape was also fabricated by using conventional photo-lithography technique. GaN epitaxial layers were subsequently grown on micro-, nano-patterned and conventional Si (111) substrate under identical growth conditions for comparison. The GaN layer grown on nano-patterned Si (111) substrate shows the lowest crack density with mirror-like surface morphology. The FWHM values of XRD rocking curve measured from symmetry (002) and asymmetry (102) planes are 576 arcsec and 828 arcsec, respectively. To corroborate an enhancement of the growth quality, the FWHM value achieved from the photoluminescence spectra also shows the lowest value (46.5 meV) as compare to other grown samples.

• Journal of the Korean Vacuum Society
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• v.7 no.1
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• pp.29-34
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• 1998

The solid-phase crystallization (SPC) of plasma-enhanced chemical vapor depsoited (PECVD) amorphous silicon (a-Si) films ha s been investigated by x-ray diffraction (XRD). The a-Si films were prepared on Si (100) wafers using $SiH_4$ gas and without $H_2$ dilution at the substrate temperatures between $120^{\circ}C$ and $380^{\circ}C$, and than annealed at $600^{\circ}C$ for crystallization. The annealed samples exhibited (111), (220), and (311) XRD peaks with preferential orientation of (111). The XRD peak intensities increased as the substrate temperature decreased, and the $H_2$dilution suppressed the solid-phase crystallization. The average grain size estimated by XRD analysis for the (111) texture has increased from about 10 nm to about 30 nm, as the substrate temperature decreased. The deposition rate also increased with the decreasing substrate temperature and the grain size was closely dependent on the deposition rate of the films. The grain size enhancement was attributed to an increase of the structural disorder of the Si network.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.96.2-96.2
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• 2010

The surface morphology and structural properties of polycrystalline silicon (poly-Si) films made in-situ aluminum induced crystallization at various substrate temperature (300~600) was investigated. Silicon films were deposited by hot-wire chemical vapor deposition (HWCVD), as the catalytic or pyrolytic decomposition of precursor gases SiH4 occurs only on the surface of the heated wire. Aluminum films were deposited by DC magnetron sputtering at room temperature. continuous poly-Si films were achieved at low temperature. from cross-section TEM analyses, It was confirmed that poly-Si above $450^{\circ}C$ was successfully grown on and poly-Si films had (111) preferred orientation. As substrate temperature increases, Si(111)/Si(220) ratio was decreased. The electrical properties of poly-Si film were investigated by Hall effect measurement. Poly-Si film was p-type by Al and resistivity and hall effect mobility was affected by substrate temperature.

• Korean Journal of Materials Research
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• v.8 no.2
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• pp.165-172
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• 1998

Epitaxial ultrathin films of $CoSi_2$ and double heteroepitaxial structure of Si/$CoSi_2$/Si(lll) were prepared on Si(111)-$7\times{7}$ substrate by in situ solid-phase epitaxy in a ultrahigh vacuum(LHV). The phase, chemical composition, crystallinity, and the microsructure of the Si/$CoSi_2$/Si(lll) interface were investigated by 2-MeV $^4He^{++}$ ion backscattering spectrometry, X-ray diffraction, and high-resolution transmission electron microscopy. The growth mode of the Co film was the Stransky-Krastanov type with texture when the substrate temperature was room temperature. A-type $CoSi_2$ ultrathin film was grown by deposition of about 50A Co on Si(ll1)-$7\times{7}$ substrate followed by in situ annealing at $700^{\circ}C$ for 10 min. The matching face relationships were $CoSi_2$[110]//Si[110] and $CoSi_2$(002)//Si(002) with no misorientation angle. The A-type $CoSi_2$/Si(lll) interface was abrupt and coherent. The best epi-Si/epi-$CoSi_2$2(A-type)/Si(lll) structure was obtained by deposition of Si film on the CoSii at $500^{\circ}C$ followed by in situ annealing at $700^{\circ}C$ for 10 min in UHV.

• Journal of the Korean Vacuum Society
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• v.6 no.2
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• pp.172-176
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• 1997

The change of surface structures for the deposition of indium on clean Si(111) surface is investigated as a function of substrate temperature and surface coverage by RHEED. We find that at substrate temperature of $400^{\circ}C$, $\sqrt{3}\times\sqrt{3},\sqrt{31}\times\sqrt{31},4\times 1$ structures are formed at indium coverages of 0.2, 0.3 and 0.5 ML, respectively. We also find that for the substrate temperature of $300^{\circ}C$, 4$\times$1 structure starts to be forme by 0.2 ML of indium, and the mixed structure of 4$\times$1 and $\sqrt{3}\times\sqrt{3}$is observed for more than 1.0 ML. On the other hand, if the indium is deposited on the Si(111)-$\sqrt{3}\times\sqrt{3}$ structure at room temperature, $2\times2\; and\;\sqrt{7}\times\sqrt{3}$ structures are found to form at 0.2 and 0.4 ML, respectovely. From the desorption process, the desorption energy of indium in Si $\sqrt{7}\times\sqrt{3}$ structure is observed to be 2.84 eV.

• Korean Journal of Materials Research
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• v.9 no.5
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• pp.528-532
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• 1999

Y$_2$O$_3$films were grown on SiO$_2$-covered Si(111), and hydrogen-terminated Si(111), and hydrogen-terminated Si(111) substrates at 50$0^{\circ}C$ by ultrahigh vacuum ionized cluster beam deposition (UHV-ICB). The microstructures and growth behavior of these films have been investigated by transmission electron diffraction (TED) and high-resolution transmission electron microscopy(HREM). The TED results show that the $Y_2$O$_3$grown on the SiO$_2$-Si has the epitaxial relationship of (11-1)Y$_2$O$_3$∥(111)Si and [-110]Y$_2$O$_3$∥[-110]Si. The film on the H-Si substrate contains YS\ulcorner and amorphous YSi\ulcornerO\ulcorner layers at the interface, having the orientation relationship each other. For the YSi\ulcorner and the Si substrate, the relationship is (0001)YSi\ulcorner∥(111)Si and [1-210]YSi\ulcorner∥∥[-110]Si. For the $Y_2$O$_3$and the YSi\ulcorner ; the relationship is as follows: (11-1)Y$_2$O$_3$∥(0001)YSi\ulcorner and [-110]Y$_2$O$_3$∥[1-210]YSi\ulcorner(111)Y$_2$O$_3$∥(0001)YSi\ulcorner and [-110]Y$_2$O$_3$∥[1-210]YSi\ulcorner. Explanation is given to describe the formation mechanisms of the interfacial phases of SiO\ulcorner, YSi\ulcornerO\ulcorner and YSi\ulcorner. It is shown that the crystallinity of the $Y_2$O$_3$film on the SiO$_2$-Si(111) is better than that of $Y_2$O$_3$on H-Si(111).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.4
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• pp.267-273
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• 1998

The band structures of $Si_{1-x}Ge_x$ layers grown on $Si_{1-y}Ge_y$ substrate are calculated using k$\cdot$p and strain Hamiltonians. The hole drift mobilities in the plane direction are then calculated by taking into account the screening effect and the density-of-states of the impurity band. When $Si_{1-x}Ge_x$ is grown on Si substrate, the mobilities of (110) and (111) $Si_{1-x}Ge_x$ layers are larger than that of (001) $Si_{1-x}Ge_x$. However, due to the large defect and surface scattering, (110) and (111) $Si_{1-x}Ge_x$ layers may not be useful for the development of the fast device. Meanwhile, when Si is grown on $Si_{1-y}Ge_y$ substrate, the mobilities of (001) and (110) Si layers are greatly enhanced. Based on the amount of defect and the surface scattering, it is expected that Si grown on (001) $Si_{1-y}Ge_y$ substrate, where the Ge contents is larger than 10%(y>0.1), has the highest mobility.

• Applied Microscopy
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• v.24 no.4
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• pp.123-131
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• 1994

In this study the initial stage nucleation and growth of Ni silicide on (001) Si by evaporation and furnace annealing have been investigated by transmission electron microscopy. The pressure was $10^{-6}$ Torr during evaporation and annealing. And the annealing temperature to produce $NiSi_2\;was\;800^{\circ}C$. From the evaporated film, $NiSi_2$ nucleus has grown into Si substrate with an epitaxial orientation relationship. Interfaces between $NiSi_2$ and Si were A-type {111} interfaces and {100} $NiSi_2$ interfaces were also observed at the initial stage of nucleation. Ni silicide grew into Si substrate, but the nucleus partly grew into the evaporated film, with no facets, from the nuclei in the Si substrate. $NiSi_2$ nucleus with (111) habit planes was also observed.

• Journal of the Korean Vacuum Society
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• v.3 no.4
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• pp.405-413
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• 1994

초고진공에서 기판 Si(111)-7$\times$7 위에 Ti:Si 또는 1:2의 조성비로 Ti와 Si을 동시증착한 후 in situ 열처리하여 TiSi2 박막을 에피택셜 성장시켰다 XRD와 XPS 분석결과 동시증착된 혼합 층에서 C49-TiSi2 박막의 성장은 핵형성에 의함을 확인하였으며 양질의 C49-TiSi2 박막은 Ti를 증착한후 Ti와 Si를 동시 증착한 (Ti+2Si)/(Ti)/Si(111)-7$\times$7구조의 시료를 초고진공에서 50$0^{\circ}C$에서 열처리하여 얻을수 있었다. 형성된 C49-TiSi2/Si(111)의 계면은 깨끗하였고 HRTEM 분석 결과 C49-TiSi2\ulcornerSi(111)의 계면은 약 10。 의 편의를 가지면서 TiSi2[211]∥Si[110] TiSi2(031)/Si(111) 의 정합성을 가졌으며 시료의 전 영 역에 에피택셜 성장되었다.

• Journal of the Korean Society of Industry Convergence
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• v.6 no.3
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• pp.201-205
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• 2003

The effects of adsorption and desorption of alkali-metals on Si(111) surface were investigated by using AES and RHEED-system. The adsorption system is a fundamental interest because of its unique electronic properties such as measurement of work function change, adatom-core level shift. It was found that the growth node of K on Si(111) surface was layer by layer growth and the saturation coverage was 2.0ML at room temperature. Superstructure changes on Si(111) surface according to the alkali-metal thickness and substrate temperatures were accurately defined. By applying the isothermal desorption method, the desorption energies of Li/Si(111) and K/Si(111) surfaces was measured. On Li/Si(111) and K/Si(111) surfaces, the desorption energies were 3.07 eV, 2.19 eV respectively.