Applied Microscopy

Korean Society of Microscopy (한국현미경학회)
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A Transmission Electron Microscopy Study of the Initial Stage of $NiSi_2$ Nucleation on the (001) Si

(001) Si에서 $NiSi_2$의 핵생성 초기 상태에 관한 투과전자현미경 연구

  • Lee, Sang-Ho (Dept. of Electronic Materials Engineering, Korea Advanced Institute of Science and Technology) ;
  • Lee, Jeong-Yong (Dept. of Electronic Materials Engineering, Korea Advanced Institute of Science and Technology)
  • 이상호 (한국과학기술원, 전자재료공학과) ;
  • 이정용 (한국과학기술원, 전자재료공학과)
  • Published : 1994.12.01
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Abstract

In this study the initial stage nucleation and growth of Ni silicide on (001) Si by evaporation and furnace annealing have been investigated by transmission electron microscopy. The pressure was $10^{-6}$ Torr during evaporation and annealing. And the annealing temperature to produce $NiSi_2\;was\;800^{\circ}C$. From the evaporated film, $NiSi_2$ nucleus has grown into Si substrate with an epitaxial orientation relationship. Interfaces between $NiSi_2$ and Si were A-type {111} interfaces and {100} $NiSi_2$ interfaces were also observed at the initial stage of nucleation. Ni silicide grew into Si substrate, but the nucleus partly grew into the evaporated film, with no facets, from the nuclei in the Si substrate. $NiSi_2$ nucleus with (111) habit planes was also observed.

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