• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.3
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• pp.392-398
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• 1996

$Si_{3}N_{4}/SiC$ nanocomposites reinforced with tow different mean particle size were fabricated by hot press. Grain growth of matrix gran was inhibited by adding of SiC particles, and then number of equiaxed and fine grains were increased. The effect of grain growth inhibition was higher in the nanocomposites dispersed small size SiC. herefore fracture strength and hardness were increased, but fracture toughness was decreased in small size SiC dispersed samples.

• Journal of the Korean Ceramic Society
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• v.31 no.10
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• pp.1089-1098
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• 1994

The effect of Si3N4 addition on the microstructure and PTCR characteristics of BaTiO3 was studied. When 0.1 mol% Sb2O3-doped BaTiO3 codoped with Si3N4 (0.1, 0.25, 0.5, 0.75, and 1 wt%, respectively) were sintered, their microstructures were changed by the amount of the liquid phase as a result of eutectic reaction at 126$0^{\circ}C$. By these microstructural changes, the specific resistivity ratio($\rho$max/$\rho$min) with Si3N4 content variation of 0.1 mol% Sb2O3-doped BaTiO3 ceramics sintered at 130$0^{\circ}C$ for 1 hour varied between 3.70$\times$102(0.1 wt% Si3N4) to 1.16$\times$103 (1wt% Si3N4).

• Journal of the Korean Ceramic Society
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• v.36 no.5
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• pp.547-554
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• 1999

The self-reinforced Si3N4 ceramics were prepared by pressureless-sintering using ${\beta}$-Si3N4 whiskers as a seed. Effects of ${\beta}$-Si3N4 whiskers on microstructure and mechanical properties and the ${\alpha}$ to ${\beta}$ phase transition of Si3N4 were investigated. The self-reinforced Si3N4 ceramics were densified(relative density$\geq$98%) by pressureless-sintering (1800$^{\circ}C$ 2h) using 8mol% Y2O3 and 6mol% Al2O3 as sintering aids and 5 vol% ${\beta}$-Si3N4 whiskers within self-reinforced Si3N4 ceramic seemed to hinder the densification owing to their acicular shapes but accelerated the ${\alpha}$ to ${\beta}$ phase transition because they acted as pre-existing nuclei. It was found that the more ${\beta}$-Si3N4 nucei the faster ${\alpha}$ to ${\beta}$ phase transition.

• Journal of the Korean Ceramic Society
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• v.43 no.10 s.293
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• pp.595-600
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• 2006

The preparation of $\beta$-SiAlON powder by SHS in the system of $Si-Al-SiO_2-NH_4F(\beta-Si_3N_4)$ was investigated in this study. In the preparation of SiAlON powder, the effect of gas pressure, compositions such as Si, $NH_4F$, \beta-Si_3N_4$ and additive in mixture on the reactivity were investigated. At 50 atm of the initial inert gas pressure in reactor, the optimum composition for the preparation of pure $\beta$-SiAlON was $3Si+Al+2SiO_2+NH_4F$. The $\beta$-SiAlON powder synthesized in this condition was a single phase $\beta$-SiAlON with a rod like morphology.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2002.05a
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• pp.49-49
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• 2002

독립된 티타늄(Ti)과 실리콘(Si) 타켓을 사용하여 DC reactive magnetron co-sputtering 공 정으로 Ti-Si-N 코탱막을 SKD 11 합금강위에 합성하였다. 고분해능 TEM 및 XPS 분석들로부터 Ti-Si-N 코탱막은 나노미터 크기의 TiN결정체들이 비정질 Si3N4 기지에 분산된 나노복합체의 마세구조를 냐타내었다. 코탱막의 경도는 11 at.%의 Si 함량에서 39 GPa의 최 고 경도값을 나타내었고 이 경우 미셰조직은 5nm 크기의 미세한 TiN 결정이 비정절상의 기지에 균일하게 분포된 특성을 보였다 .. Ti-Si-N 박막내에 Si 함량이 증가할수록 TiN 결정 상들은 다배향성을 나타내었고 크기가 감소하였으며 비정질상에 의해 완전히 둘려싸언 형상 으로 변화하였다. 높은 Si 함량에서는 질소 소스의 부족현상에 의하여 코팅막내에서 free Si 가 나타났다. 상대습도가 증가함에 따라 Ti-Si-N 코탱막의 마찰계수와 마모량이 현저하게 감소하였다. 강재에 대한 Ti-Si-N 코팅막의 마모거동에 있어서 Si02 냐 Si(OH)2 같은 얇은 윤활막의 형성이 중요한 역할을 하는 것으로 판단되어졌다.

• Korean Journal of Materials Research
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• v.15 no.3
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• pp.177-182
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• 2005

Large amounts of the waste SiC sludge containing small amounts of Si and organic lubricant were produced during the wire cutting process of the single silicon crystal ingots. The waste SiC sludge was purified by the washing process and the purified SiC powders were used to fabricate continuously porous $SiC-Si_3N_4$ composites using a fibrous monolithic process, in which carbon, $6wt\%\;Y_2O_3-2\;wt\%\;A1_2O_3$ and ethylene vinyl acetate were added as a pore-forming agent, sintering additives, and binder, respectively. In the burning-out process, carbon was fully removed and continuously porous $SiC-Si_3N_4$ composites were successfully fabricated. The green bodies containing SiC, Si particles and sintering additives were nitrided at $1410^{\circ}C$ in a flowing $N_2+10\%\;H_2$ gas mixture. Continuously porous composites were combined with SiC, ${\alpha}Si_3N_4,\;\beta-Si_3N_4$ and a few $\%$ of Fe phases. The pore size of the 2nd and the 3rd passed $SiC-Si_3N_4$ composites was $260\;{\mu}m$ and $35\;{\mu}m$ in diameter, respectively.

• Journal of the Korean Ceramic Society
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• v.37 no.3
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• pp.280-287
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• 2000

Adsorption behavior and amount of phenolic resin followed silica (SiO2) formation onto silicon nitride(Si3N4) surface were investigated using electrokinetic sonic amplitude (ESA) technique and with UV spectrometer, to fabricate Si3N4/SiC nano-composite based on reaction between SiO2 formed and phenolic resin absorbed onto Si3N4 particle. The amount of SiO2 formed and carbon from phenolic resin absorbed onto Si3N4 surface were calculated quantitatively to adjust the reaction between SiO2 and phenolic resin, resulting in no residual SiO2 and carbon. As a result, pre-heated tempeature for optimized reaction was below 25$0^{\circ}C$, in which there was no residual SiO2 and carbon.

• Korean Journal of Materials Research
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• v.5 no.7
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• pp.835-841
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• 1995

The deposition properties of Si$_3$N$_4$ deposited by low pressure chemical vapor deposition were studied to evaluate Si$_3$N$_4$as part of multi-layer coatings for anti-oxidation and anti-wear coating of graphite in the propellant-burning environment. Si$_3$N$_4$was deposited on the pack-SiC coated graphite and the tendencies of deposition rate and surface morphology changes with temperatures and reaction gas ratios were investigated. In low deposition temperatures the deposition rate increased tilth increasing temperature but in high temperatures the deposition rate decreased with increasing temperature. The grain size of Si$_3$N$_4$decreased with increasing temperature. In condition that the range of reaction gas ratios is 20$\leq$NH$_3$/SiH$_4$$\leq$40, the deposition rate and surface morphology did not change. The Si$_3$N$_4$deposited at 800~130$0^{\circ}C$ was amorphous, and by post-annealing at 130$0^{\circ}C$ in a $N_2$ambient, the Si$_3$N$_4$crystalized.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.10
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• pp.464-468
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• 2003

The double layers of $SiO_2$/$Si_3$$N_4$ have superior charge storage stability than a single layer of $SiO_2$. Many researchers are very interested in the charge storage mechanism of $SiO_2$/$Si_3$$N_4$ [1,2]. In this paper, the electrical characteristics of thermal oxide and atmospheric pressure chemical vapor deposition (APCVD) of $Si_4$$N_4$ have been investigated and explained using high frequency capacitance-voltage measurements. Additionally, this paper will describe capacitance-voltage characteristics for double layers of $SiO_2$/$Si_4$$N_4$ by "Athena", a semiconductor device simulation tool created by Silvaco, Inc.vaco, Inc.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2014.11a
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• pp.304-304
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• 2014

Quaternary Ti-Al-Si-N films were deposited on WC-Co substrates by a hybrid deposition system of arc ion plating (AIP) method for Ti-Al source and DC magnetron sputtering technique for Si incorporation. The synthesized Ti-Al-Si-N films were revealed to be composites of solid-solution (Ti,Al)N crystallites and amorphous $Si_3N_4$ by instrumental analyses. The Si addition in Ti-Al-N films affected the refinement and uniform distribution of crystallites by percolation phenomenon of amorphous silicon nitride, similarly to Si effect in TiN film. As the Si content increased up to about 9 at.%, the hardness of Ti-Al-N film steeply increased from 30 GPa to about 50 GPa. The highest microhardness value (~50 GPa) was obtained from the Ti-Al-Si-N film having the Si content of 9 at.%, the microstructure of which was characterized by a nanocomposite of $nc-(Ti,Al)N/a-Si_3N_4$.