• Journal of the Korean Society of Radiology
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• v.14 no.6
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• pp.811-817
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• 2020

This study aims to evaluate the Modulation Transfer Function (MTF) according to the change in the number of channels of the CT examination device by changing the posture of the patient to the X-axis and Y-axis in the wrist joint CT examination. Using a CT device and a wrist phantom, the test was performed by moving 0 (matched), 5, 10, and 15 cm in the X-axis around the isocenter, and the Z-axis was rotated by -20° and -40°. For the test, 16, -40 and 64 channels were used to check whether there was a difference for each number of channels. The examined images were compared by measuring the MTF values of the ulna and left and right sides of the radius. In the experiment where the isocenter was moved along the X-axis, the MTF value decreased with an increase in the moving distance, and the MTF value was found to be unaffected by the number of channels. In the experiment in which the wrist joint was rotated by -20° and -40° on the Z-axis, the degree of deviation and MTF were found to be irrelevant. It was not related to the number of channels either. In conclusion, the movement of the wrist along the X-axis should be restrained as much as possible for a wrist joint CT scan, whereas deviation around the Z-axis depending on the environment for the patient would not affect the MTF of the image.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1095-1096
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• 2006

When $Y_2O_3$ was added to Ti-excess $BaTiO_3$ ((Ba+Y)/Ti =1), the area occupied by $Y^{3+}$ ion was confirmed by its microstructure development, electrical conductivity behavior and lattice constant. Grain growth inhibition was observed when the content of donor dopant exceeded a critical value ($x{\approx}.0.01$) in $BaTiO_3+x(0.5Y_2O_3+TiO_2)$ system. A donor-doped behavior was observed at various Y contents ($0.2\sim3.0$ mol% Y) when $Y_2O_3$ was added to $TiO_2$-excess $BaTiO_3$. As Y content was increased, (002) and (200) peaks shifted to higher angles and the lattice constant (a and c axis) decreased gradually.

• Journal of the Korean Institute of Telematics and Electronics
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• v.11 no.6
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• pp.1-15
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• 1974

In this paper, the SH mode of elastic surface waves which are used for delay lines of elastic surface wave is the cretically analysed. It is shown that the SH mode has very large electromechanical coupling factor and propagates on the surface with very small decaying coefficient into the medium. In the case of P2T-4, the depth cf piezoelectric medium that contains 80% of energy is 190 wavelengths. An elastic surface wave delay line is discussed from the view point of 2-port network. Center frequency is shifted by the ratio of transducer electrode width to gap between transducer ellcerodes when electromechanical coupling factor is large. Tempera _ore coefficients for bulk waves of LiNbO3 and LiTaO3 are also calculated and the minimum temperature coefficient value of delay time is 5.4X 10-6/$^{\circ}C$ ia the case of transverse wave propagating along Z axis on LiTaO3. Experimental data are in good agreement with theoretical values of the temperature coefficients of delay time for elastic surface waves propagating along X axis of 130$^{\circ}$ and 64$^{\circ}$ rotated Y cut planes of the LiNbO3.

• Korean Journal of Materials Research
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• v.22 no.10
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• pp.508-512
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• 2012

ZnO thin films were grown on a sapphire substrate by RF magnetron sputtering. The characteristics of the thin films were investigated by ellipsometry, X-ray diffraction (XRD), atomic force microscopy (AFM), photoluminescence (PL), and Hall effect. The substrate temperature and growth time were kept constant at $200^{\circ}C$ at 30 minutes, respectively. The RF power was varied within the range of 200 to 500 W. ZnO thin films on sapphire substrate were grown with a preferred C-axis orientation along the (0002) plan; X-ray diffraction peak shifted to low angles and PL emission peak was red-shifted with increasing RF power. In addition, the electrical characteristics of the carrier density and mobility decreased and the resistivity increased. In the electrical and optical properties of ZnO thin films under variation of RF power, the crystallinity improved and the roughness increased with increasing RF power due to decreased oxygen vacancies and the presence of excess zinc above the optimal range of RF power. Consequently, the crystallinity of the ZnO thin films grown on sapphire substrate was improved with RF sputtering power; however, excess Zn resulted because of the structural, electrical, and optical properties of the ZnO thin films. Thus, excess RF power will act as a factor that degrades the device characteristics.

• Journal of Institute of Control, Robotics and Systems
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• v.20 no.10
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• pp.1002-1007
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• 2014

This paper deals with the adaptive backstepping hovering control for a quadrotor with model parameter uncertainties. In this paper, the backstepping based technique is utilized to design a nonlinear adaptive controller which can compensate for the motor thrust factor and the drag coefficient of a quadrotor. First, the quadrotor nonlinear dynamics is derived using Newton-Euler formulation. In particular, we use the ${\pi}/4$ shifted coordinate for x- and y-axis of a quadrotor. Second, an adaptive backstepping based attitude and altitude tracking control method is presented. The system stability and the convergence of tracking errors are proven using the Lyapunov stability theory. Finally, the simulation results are given to verify the effectiveness of the proposed control method.

• Korean Journal of Materials Research
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• v.30 no.10
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• pp.558-565
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• 2020

AZO thin films are grown on a p-Si(111) substrate by RF magnetron sputtering. The characteristics of various thicknesses and heat treatment conditions are investigated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Hall effect and room-temperature photoluminescence (PL) measurements. The substrate temperature and the RF power during growth are kept constant at 400 ℃ and 200 W, respectively. AZO films are grown with a preferred orientation along the c-axis. As the thickness and the heat treatment temperature increases, the length of the c-axis decreases as Al³⁺ ions of relatively small ion radius are substituted for Zn²⁺ ions. At room temperature, the PL spectrum is separated into an NBE emission peak around 3.2 eV and a violet regions peak around 2.95 eV with increasing thickness, and the PL emission peak of 300 nm is red-shifted with increasing annealing temperature. In the XPS measurement, the peak intensity of Al_2p and O_ll increases with increasing annealing temperature. The AZO thin film of 100 nm thickness shows values of 6.5 × 10¹⁹ cm^-3 of carrier concentration, 8.4 cm^-2/V·s of mobility and 1.2 × 10^-2 Ω·cm electrical resistivity. As the thickness of the thin film increases, the carrier concentration and the mobility increase, resulting in the decrease of resistivity. With the carrier concentration, mobility decreases when the heat treatment temperature increases more than 500 ℃.

• Korean Journal of Materials Research
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• v.23 no.3
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• pp.161-167
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• 2013

The ZnO thin films were grown on GaN template substrates by RF magnetron sputtering at different RF powers and n-ZnO/p-GaN heterojunction LEDs were fabricated to investigate the effect of the RF power on the characteristics of the n-ZnO/p-GaN LEDs. For the growth of the ZnO thin films, the substrate temperature was kept constant at $200^{\circ}C$ and the RF power was varied within the range of 200 to 500W at different growth times to deposit films of 100 nm thick. The electrical, optical and structural properties of ZnO thin films were investigated by ellipsometry, X-ray diffraction (XRD), atomic force microscopy (AFM), photoluminescence (PL) and by assessing the Hall effect. The characteristics of the n-ZnO/p-GaN LEDs were evaluated by current-voltage (I-V) and electroluminescence (EL) measurements. ZnO thin films were grown with a preferred c-axis orientation along the (0002) plane. The XRD peaks shifted to low angles and the surface roughness became non-uniform with an increase in the RF power. Also, the PL emission peak was red-shifted. The carrier density and the mobility decreased with the RF power. For the n-ZnO/p-GaN LED, the forward current at 20 V decreased and the threshold voltage increased with the RF power. The EL emission peak was observed at approximately 435 nm and the luminescence intensity decreased. Consequently, the crystallinity of the ZnO thin films grown with RF sputtering powers were improved. However, excess Zn affected the structural, electrical and optical properties of the ZnO thin films when the optimal RF power was exceeded. This excess RF power will degrade the characteristics of light emitting devices.

• Korean Journal of Materials Research
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• v.23 no.3
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• pp.155-160
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• 2013

ZnO thin films co-doped with Mg and Ga (MxGyZzO, x + y + z = 1, x = 0.05, y = 0.02 and z = 0.93) were prepared on glass substrates by RF magnetron sputtering with different sputtering powers ranging from 100W to 200W at a substrate temperature of $350^{\circ}C$. The effects of the sputtering power on the structural, morphological, electrical, and optical properties of MGZO thin films were investigated. The X-ray diffraction patterns showed that all the MGZO thin films were grown as a hexagonal wurtzite phase with the preferred orientation on the c-axis without secondary phases such as MgO, $Ga_2O_3$, or $ZnGa_2O_4$. The intensity of the diffraction peak from the (0002) plane of the MGZO thin films was enhanced as the sputtering power increased. The (0002) peak positions of the MGZO thin films was shifted toward, a high diffraction angle as the sputtering power increased. Cross-sectional field emission scanning electron microscopy images of the MGZO thin films showed that all of these films had a columnar structure and their thickness increased with an increase in the sputtering power. MGZO thin film deposited at the sputtering power of 200W showed the best electrical characteristics in terms of the carrier concentration ($4.71{\times}10^{20}cm^{-3}$), charge carrier mobility ($10.2cm^2V^{-1}s^{-1}$) and a minimum resistivity ($1.3{\times}10^{-3}{\Omega}cm$). A UV-visible spectroscopy assessment showed that the MGZO thin films had high transmittance of more than 80 % in the visible region and that the absorption edges of MGZO thin films were very sharp and shifted toward the higher wavelength side, from 270 nm to 340 nm, with an increase in the sputtering power. The band-gap energy of MGZO thin films was widened from 3.74 eV to 3.92 eV with the change in the sputtering power.

• Journal of Life Science
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• v.9 no.6
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• pp.646-652
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• 1999

The effect of temperature on the structure change of the SH of myosin head have been investigated with improved resolution by x-ray diffraction using synchrotron radiation. The movement of myosin head and conformational change of contractile molecules were occurred in the muscle contraction. IASL (iodo acetamide) and MSL (maleimide) disordered the orderly helix arrangement of myosin in the rest state of spin level. The temperature effect on the structure change was great at the UL in the equatorial reflection. But those of IASL and MSL were minor. Equatorial reflection (10, 11) change inferred that myosin head was moved to the vicinity of actin filament by temperature change (from $25^{\circ}C$ to $0^{\circ}C$) at UL, but spin level was not changed. The intensity change of 143 $\AA$ and 72 $\AA$ could offer information of the mass profection of population of myosin heads along the filament axis. The slope of intensity profile of the mass profection of 143$\AA$ and reflection of MSL is appeared sharply and those of UL and IASL were not changed. The decrease of MSL actin reflection at 51 $\AA$ and 59 $\AA$ in the actin reflection change refers that the shifted myosin head binds a certain actin or changes an actin structure. From these results, we could conclude that IASL and MSL were spin labeled on SH of myosin head and disordered the helix arrangement of actin.

• Applied Science and Convergence Technology
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• v.23 no.5
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• pp.279-283
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• 2014

Al doped ZnO thin films have been deposited by a RF magnetron sputtering technique from a ZnO (2 wt.% $Al_2O_3$) target onto glass substrates heated at temperature ranging from RT to $400^{\circ}C$. X-ray diffraction analysis shows that the deposits have a preferential growth along the c-axis of a hexagonal structure. The full with at half maximum decreases from 0.45 to $0.43^{\circ}$ in the studied temperature range. The root main square surface roughness increases with substrate temperature from 1.89 to 2.67 nm. All films are transparent up to 80% in the visible wavelength range and the adsorption edge is red-shifted with substrate temperature from RT to $400^{\circ}C$. The sheet resistance increases from 92 ohm/sq to 419 ohm/sq when the deposition temperature increases from RT to $400^{\circ}C$. The increment of sheet resistance is caused by lowered carrier concentration resulting from an increase in surface roughness.